DMN601WKQ N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT323 D r a in D G a te G a te P ro te c tio n D io d e ESD PROTECTED Top View G S S o u rce Top View Pin Out Configuration E Q U IV A L E N T C IR C U I T Ordering Information (Note 5) Part Number DMN601WKQ-7 DMN601WKQ-13 Notes: Case SOT323 SOT323 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YM K7K K7K = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMN601WKQ Document number: DS38408 Rev. 1 - 2 2018 F Mar 3 Apr 4 2019 G May 5 2020 H Jun 6 1 of 7 www.diodes.com 2021 I Jul 7 Aug 8 2022 J Sep 9 2023 K Oct O 2024 L Nov N Dec D January 2016 (c) Diodes Incorporated DMN601WKQ Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units VDSS 60 V VGSS 20 V ID 300 800 mA Symbol Value Units PD 200 mW RJA 625 C/W TJ, TSTG -65 to +150 C Drain-Source Voltage Gate-Source Voltage Continuous Pulsed (Note 7) Drain Current (Note 6) Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 60 V VGS = 0V, ID = 10A Zero Gate Voltage Drain Current IDSS 1.0 A VDS = 60V, VGS = 0V Gate-Source Leakage IGSS 10 A VGS = 20V, VDS = 0V Gate Threshold Voltage VGS(TH) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA Static Drain-Source On-Resistance RDS(ON) 2.0 3.0 |YFS| 80 ms Input Capacitance CISS 50 pF Output Capacitance COSS 25 pF Reverse Transfer Capacitance CRSS 5.0 pF OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 8) Forward Transfer Admittance VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 0.2A VDS = 10V, ID = 0.2A DYNAMIC CHARACTERISTICS (Note 9) Notes: 6. 7. 8. 9. VDS = 25V, VGS = 0V, f = 1.0MHz Device mounted on FR-4 PCB. Pulse width 10S, Duty Cycle 1%. Short duration pulse test used to minimize self-heating effect. Guaranteed by design. Not subject to production testing. DMN601WKQ Document number: DS38408 Rev. 1 - 2 2 of 7 www.diodes.com January 2016 (c) Diodes Incorporated DMN601WKQ 1.0 VGS = 5V VDS = 5.0V VGS = 3.5V VGS = 4.5V 0.8 ID, DRAIN CURRENT (A) 0.8 I D, DRAIN CURRENT (A) 1 VGS = 10V 0.6 0.4 VGS = 3.0V 0.2 VGS = 2.2V 0 T A = 85C TA = 125C 0.2 T A = 150C TA = 25C T A = -55C VGS = 2.5V 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0 5 1 1.5 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4.5 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 2.2 2 VGS = 4.5V 1.8 1.6 VGS = 10V 1.4 1.2 1 0.4 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 8 6 I D = 500mA 4 2 0 4 2 4 6 8 10 12 V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2 VGS = 10V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 0.6 3 TA = 150C TA = 125C 2 T A = 85C T A = 25C 1 T A = -55C 0 0 0.2 0.4 0.6 0.8 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN601WKQ Document number: DS38408 Rev. 1 - 2 VGS = 10V 1.8 I D = 500mA 1.6 VGS = 5V I D = 50mA 1.4 1.2 1 0.8 1 3 of 7 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature January 2016 (c) Diodes Incorporated 2.2 3 VGS(th ), GATE THRESHOLD VO LTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) DMN601WKQ 2.5 2 1.5 VGS = 5V ID = 50mA 1 VGS = 10V ID = 500mA 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 1 2 I D = 1mA 1.8 I D = 250A 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 100 CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) f=1MHz 0.8 0.6 T A = 150C 0.4 T A = 125C T A = 25C T A = 85C T A = -55C Ciss 10 0.2 0 C oss C rss 1 0 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1.5 0 5 10 15 20 25 30 35 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 10 ID, DRAIN CURRENT (A) RDS(on) Limited PW = 100s 1 PW = 1ms DC 0.1 0.01 PW = 10s PW = 1s TJ (m ax ) = 150C TA = 25C PW = 100ms PW = 10ms VGS = 10V Single Pulse DUT on 1 * MRP Board 0.001 0.1 10 1 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMN601WKQ Document number: DS38408 Rev. 1 - 2 100 4 of 7 www.diodes.com January 2016 (c) Diodes Incorporated DMN601WKQ 1 D = 0.9 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R JA(t) = r(t) * RJA R JA = 408C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.000001 0.00001 DMN601WKQ Document number: DS38408 Rev. 1 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 January 2016 (c) Diodes Incorporated DMN601WKQ Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT323 D A2 c A1 a e L b E E1 F SOT323 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC e1 1.20 1.40 1.30 F 0.375 0.475 0.425 L 0.25 0.40 0.30 a 8 All Dimensions in mm e1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT323 X Y Dimensions Y1 C G X Y Y1 G Value (in mm) 0.650 1.300 0.470 0.600 2.500 C DMN601WKQ Document number: DS38408 Rev. 1 - 2 6 of 7 www.diodes.com January 2016 (c) Diodes Incorporated DMN601WKQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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