DMN601WKQ
Document number: DS38408 Rev. 1 - 2
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January 2016
© Diodes Incorporated
DMN601WKQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
Ordering Information (Note 5)
Case
Packaging
SOT323
3,000/Tape & Reel
SOT323
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
2024
Code
D
E
F
G
H
I
J
K
L
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT323
Top View
Top View
Pin Out Configuration
G S
D
S o u rc e
E Q U IVA L E N T C IR C U IT
G a te
P ro tec tio n
D io de
G a te
D r a in
ESD PROTECTED
K7K = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
K7K
YM
DMN601WKQ
Document number: DS38408 Rev. 1 - 2
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January 2016
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DMN601WKQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 6)
Continuous Pulsed
(Note 7)
ID
300
800
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
PD
200
mW
Thermal Resistance, Junction to Ambient
RθJA
625
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
±10
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
1.0
1.6
2.5
V
VDS = 10V, ID = 1mA
Static Drain-Source On-Resistance
RDS(ON)




2.0
3.0
Ω
VGS = 10V, ID = 0.5A
VGS = 4.5V, ID = 0.2A
Forward Transfer Admittance
|YFS|
80
ms
VDS = 10V, ID = 0.2A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
CISS
50
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
COSS
25
pF
Reverse Transfer Capacitance
CRSS
5.0
pF
Notes: 6. Device mounted on FR-4 PCB.
7. Pulse width 10µS, Duty Cycle 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN601WKQ
Document number: DS38408 Rev. 1 - 2
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January 2016
© Diodes Incorporated
DMN601WKQ
0.0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 10V
GS
V = 2.2V
GS
V = 4.5V
GS
V = 5V
GS
I , DRAIN CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristic
0
0.2
0.4
0.6
0.8
1
1 1.5 2 2.5 3 3.5 4 4.5
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
AT = 25°C
A
T = -55°C
A
I , DRAIN CURRENT (A)
D
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
1
1.2
1.4
1.6
1.8
2
2.2
0 0.2 0.4 0.6 0.8 1
V = 4.5V
GS
V = 10V
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
2
4
6
8
10
2 4 6 8 10 12
I = 500mA
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
0
1
2
3
4
0 0.2 0.4 0.6 0.8 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
V = 5V
GS
I = 50mA
D
V = 10V
GS
I = 500mA
D
R , DRAIN-SOURCE
DS(ON)
ON-RESISTANCE (NORMALIZED)
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
DMN601WKQ
Document number: DS38408 Rev. 1 - 2
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January 2016
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DMN601WKQ
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50 75 100 125 150
V = 5V
GS
I = 50mA
D
V = 10V
GS
I = 500mA
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with Temperature
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150
I = 1mA
D
I = 250µA
D
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
T , JUNCTION TEMPERATURE ( C)
J
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1
0 0.3 0.6 0.9 1.2 1.5
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , SOURCE CURRENT (A)
S
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
1
10
100
0 5 10 15 20 25 30 35 40
Ciss
Coss
Crss
f=1MHz
C , JUNCTION CAPACITANCE (pF)
T
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
0.001
0.01
0.1
1
10
0.1 110 100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
RDS(on)
Limited
T = 150°C
J(max)
T = 25°C
A
V = 10V
GS
Single Pulse
DUT on 1 * MRP Board
I , DRAIN CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11 SOA, Safe Operation Area
DMN601WKQ
Document number: DS38408 Rev. 1 - 2
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January 2016
© Diodes Incorporated
DMN601WKQ
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) * R
JA JA
R = 408°C/W
JA
Duty Cycle, D = t1/ t2
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
DMN601WKQ
Document number: DS38408 Rev. 1 - 2
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January 2016
© Diodes Incorporated
DMN601WKQ
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT323
a
E1E
Fe1
b
L
c
e
A2
A1
D
SOT323
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.25
0.40
0.30
c
0.10
0.18
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
e1
1.20
1.40
1.30
F
0.375
0.475
0.425
L
0.25
0.40
0.30
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT323
Y1 G
Y
X
C
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.470
Y
0.600
Y1
2.500
DMN601WKQ
Document number: DS38408 Rev. 1 - 2
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January 2016
© Diodes Incorporated
DMN601WKQ
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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