DSA15IM200UC preliminary Schottky Diode Gen VRRM = 200 V I FAV = 15 A VF = 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15IM200UC Marking on Product: SFMAUI Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 (DPak) Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA15IM200UC preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 200 V IR reverse current, drain current VR = 200 V TVJ = 25C 250 A VR = 200 V TVJ = 125C 2.5 mA TVJ = 25C 0.94 V 1.10 V 0.78 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 125 C TC = 150C rectangular 0.95 V T VJ = 175 C 15 A TVJ = 175 C 0.53 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 10.8 m 2 K/W K/W 0.50 TC = 25C 24 V f = 1 MHz Data according to IEC 60747and per semiconductor unless otherwise specified 75 200 67 W A pF 20131031b DSA15IM200UC preliminary Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 20 Unit A -55 175 C -55 150 C 150 C Weight FC 1) typ. 1) 0.3 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Logo Part number Assembly Line Part number D S A 15 IM 200 UC IXYS abcdefg Z YY = = = = = = = Diode Schottky Diode low VF Current Rating [A] Single Diode Reverse Voltage [V] TO-252AA (DPak) WW Date Code Ordering Standard Part Number DSA15IM200UC Equivalent Circuits for Simulation I V0 R0 Marking on Product SFMAUI * on die level Delivery Mode Tape & Reel Code No. 510408 T VJ = 175 C Schottky V 0 max threshold voltage 0.53 V R 0 max slope resistance * 7.6 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 2500 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA15IM200UC preliminary Outlines TO-252 (DPak) 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b DSA15IM200UC preliminary Schottky 30 250 24 200 TVJ = 150C 125C 25C IF 18 CT 150 [A] 12 [pF] 100 6 50 0 0.0 TVJ= 25C 0 0.2 0.4 0.6 0.8 VF [V] 1.0 1.2 0 50 100 VR [V] 150 200 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 1 Maximum forward voltage drop characteristics 16 24 14 20 DC 12 d = 0.5 16 10 IF(AV) P(AV) d= DC 0.5 0.33 0.25 0.17 0.08 8 12 [A] [W] 6 8 4 4 2 0 0 0 40 80 120 TC [C] 160 200 0 Fig. 4 Avg: forward current IF(AV) vs. case temperature TC 4 8 12 IF(AV) [A] 16 20 Fig. 5 Forward power loss characteristics 2.4 2.0 1.6 ZthJC 1.2 [K/W] 0.8 0.4 0.0 0.001 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031b