74HC32; 74HCT32 Quad 2-input OR gate Rev. 5 -- 4 September 2012 Product data sheet 1. General description The 74HC32; 74HCT32 is a quad 2-input OR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits Wide supply voltage range from 2.0 V to 6.0 V Complies with JEDEC standard JESD7A Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays Input levels: For 74HC32: CMOS level For 74HCT32: TTL level ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V Multiple package options Specified from 40 C to +85 C and from 40 C to +125 C 74HC32; 74HCT32 NXP Semiconductors Quad 2-input OR gate 3. Ordering information Table 1. Ordering information Type number 74HC32N Package Temperature range Name Description Version 40 C to +125 C DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1 40 C to +125 C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 40 C to +125 C DHVQFN14 plastic dual in-line compatible thermal enhanced very SOT762-1 thin quad flat package; no leads; 14 terminals; body 2.5 3 0.85 mm 74HCT32N 74HC32D 74HCT32D 74HC32DB 74HCT32DB 74HC32PW 74HCT32PW 74HC32BQ 74HCT32BQ 4. Functional diagram 1 1 3 1 6 1 8 2 4 1 1A 2 1B 4 2A 5 2B 9 3A 10 3B 12 4A 13 4B 1Y 3 5 2Y 6 9 10 3Y 8 4Y 11 A 12 Logic symbol 74HC_HCT32 Product data sheet 11 Y 13 mna243 mna242 Fig 1. 1 Fig 2. IEC logic symbol All information provided in this document is subject to legal disclaimers. Rev. 5 -- 4 September 2012 B Fig 3. mna241 Logic diagram (one gate) (c) NXP B.V. 2012. All rights reserved. 2 of 17 74HC32; 74HCT32 NXP Semiconductors Quad 2-input OR gate 5. Pinning information 1A terminal 1 index area 14 VCC 5.1 Pinning 1 14 VCC 1B 2 13 4B 1B 2 13 4B 12 4A 1Y 3 12 4A 2A 4 32 11 4Y 2B 5 GND(1) 10 3B 2Y 6 1 1A 32 11 4Y 10 3B 2B 5 2Y 6 9 3A GND 7 8 3Y 9 8 4 3Y 2A 7 3 GND 1Y 3A 001aad102 Transparent top view 001aad101 (1) The die substrate is attached to this pad using conductive die attach material. It cannot be used as a supply pin or input. Fig 4. Pin configuration DIP14, SO14 and (T)SSOP14 Fig 5. Pin configuration DHVQFN14 5.2 Pin description Table 2. Pin description Symbol Pin Description 1A to 4A 1, 4, 9, 12 data input 1B to 4B 2, 5, 10,13 data input 1Y to 4Y 3, 6, 8, 11 data output GND 7 ground (0 V) VCC 14 supply voltage 6. Functional description Table 3. Function table[1] Input Output nA nB nY L L L L H H H L H H H H [1] H = HIGH voltage level; L = LOW voltage level; X = don't care. 74HC_HCT32 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 -- 4 September 2012 (c) NXP B.V. 2012. All rights reserved. 3 of 17 74HC32; 74HCT32 NXP Semiconductors Quad 2-input OR gate 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage Conditions Min Max Unit 0.5 +7 V - 20 mA - 20 mA - 25 mA 50 mA IIK input clamping current VI < 0.5 V or VI > VCC + 0.5 V [1] IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V [1] IO output current 0.5 V < VO < VCC + 0.5 V ICC supply current - IGND ground current 50 - mA Tstg storage temperature 65 +150 C DIP14 package - 750 mW SO14, (T)SSOP14 and DHVQFN14 packages - 500 mW total power dissipation Ptot [1] [2] [2] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. For DIP14 package: Ptot derates linearly with 12 mW/K above 70 C. For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 C. 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V) Symbol Parameter Conditions 74HC32 74HCT32 Unit Min Typ Max Min Typ Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0 - VCC V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature 40 - +125 40 - +125 C t/V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V - - 83 - - - ns/V 74HC_HCT32 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 -- 4 September 2012 (c) NXP B.V. 2012. All rights reserved. 4 of 17 74HC32; 74HCT32 NXP Semiconductors Quad 2-input OR gate 9. Static characteristics Table 6. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions Min Typ VCC = 2.0 V 1.5 VCC = 4.5 V 40 C to +85 C 40 C to +125 C Unit Max Min Max Min Max 1.2 - 1.5 - 1.5 - V 3.15 2.4 - 3.15 - 3.15 - V VCC = 6.0 V 4.2 3.2 - 4.2 - 4.2 - V 74HC32 VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VCC = 2.0 V - 0.8 0.5 - 0.5 - 0.5 V VCC = 4.5 V - 2.1 1.35 - 1.35 - 1.35 V VCC = 6.0 V - 2.8 1.8 - 1.8 - 1.8 V VI = VIH or VIL IO = 20 A; VCC = 2.0 V 1.9 2.0 - 1.9 - 1.9 - V IO = 20 A; VCC = 4.5 V 4.4 4.5 - 4.4 - 4.4 - V IO = 20 A; VCC = 6.0 V 5.9 6.0 - 5.9 - 5.9 - V IO = 4.0 mA; VCC = 4.5 V 3.98 4.32 - 3.84 - 3.7 - V IO = 5.2 mA; VCC = 6.0 V 5.48 5.81 - 5.34 - 5.2 - V IO = 20 A; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V IO = 20 A; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V VI = VIH or VIL IO = 20 A; VCC = 6.0 V - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.26 - 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V - 0.16 0.26 - 0.33 - 0.4 V II input leakage current VI = VCC or GND; VCC = 6.0 V - - 0.1 - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 2.0 - 20 - 40 A CI input capacitance - 3.5 - - - - - pF 74HCT32 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A 4.4 4.5 - 4.4 - 4.4 - V IO = 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A - 0 0.1 - 0.1 - 0.1 V IO = 5.2 mA - 0.15 0.25 - 0.33 - 0.4 V VI = VCC or GND; VCC = 5.5 V - - 0.1 - 1 - 1 A VOL II input leakage current 74HC_HCT32 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 -- 4 September 2012 (c) NXP B.V. 2012. All rights reserved. 5 of 17 74HC32; 74HCT32 NXP Semiconductors Quad 2-input OR gate Table 6. Static characteristics ...continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions Min 40 C to +85 C 40 C to +125 C Unit Typ Max Min Max Min Max ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 2.0 - 20 - 40 A ICC additional supply current per input pin; VI = VCC 2.1 V; IO = 0 A; other inputs at VCC or GND; VCC = 4.5 V to 5.5 V - - 430 - 540 - 590 A CI input capacitance - 3.5 - - - - - pF 10. Dynamic characteristics Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for load circuit see Figure 7. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) 74HC32 tpd propagation delay nA, nB to nY; see Figure 6 [1] VCC = 2.0 V - 22 90 115 135 ns VCC = 4.5 V - 8 18 23 27 ns VCC = 5.0 V; CL = 15 pF - 6 - - - ns - 6 15 20 23 ns VCC = 2.0 V - 19 75 95 110 ns VCC = 4.5 V - 7 15 19 22 ns - 6 13 16 19 ns - 16 - - - pF VCC = 6.0 V tt transition time [2] see Figure 6 VCC = 6.0 V CPD power dissipation capacitance 74HC_HCT32 Product data sheet per package; VI = GND to VCC [3] All information provided in this document is subject to legal disclaimers. Rev. 5 -- 4 September 2012 (c) NXP B.V. 2012. All rights reserved. 6 of 17 74HC32; 74HCT32 NXP Semiconductors Quad 2-input OR gate Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for load circuit see Figure 7. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) - 11 24 30 36 ns - 9 - - - ns 74HCT32 [1] propagation delay nA, nB to nY; see Figure 6 tpd VCC = 4.5 V VCC = 5.0 V; CL = 15 pF tt transition time VCC = 4.5 V; see Figure 6 [2] CPD power dissipation capacitance per package; VI = GND to VCC 1.5 V [3] [1] - 7 15 19 22 ns - 28 - - - pF tpd is the same as tPHL and tPLH. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in W): PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL VCC2 fo) = sum of outputs. 11. Waveforms 9, Q$Q%LQSXW 90 *1' W3+/ 92+ 9< Q