AONR21357 30V P-Channel MOSFET General Description Product Summary * Latest advanced trench technology * Low RDS(ON) * High Current Capability * RoHS and Halogen-Free Compliant ID (at VGS=-10V) -30V -34A RDS(ON) (at VGS=-10V) < 7.8m RDS(ON) (at VGS=-4.5V) < 12.3m VDS Applications 100% UIS Tested 100% Rg Tested * Notebook AC-in load switch * Battery protection charge/discharge DFN 3x3_EP Bottom View Top View Top View PIN1 D S S S 1 8 D 2 7 3 6 D D G 4 5 D G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AONR21357 DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH TC=25C Power Dissipation B TC=100C C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: July 2017 IAS 39 A EAS 76 mJ 30 Steady-State Steady-State W 12 5 RqJA RqJC W 3.2 TJ, TSTG Symbol t 10s A -17 PDSM TA=70C A -21 PD TA=25C A V -136 IDSM TA=70C 25 -32.5 IDM TA=25C Continuous Drain Current Units V -34 ID TC=100C Maximum -30 -55 to 150 Typ 20 45 3.5 www.aosmd.com Max 25 55 4.2 C Units C/W C/W C/W Page 1 of 6 AONR21357 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -30 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=25V Gate Threshold Voltage VDS=VGS, ID=250mA -1 TJ=55C 100 nA -1.7 -2.3 V 6.3 7.8 8.6 10.7 12.3 RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-16A 9.8 gFS Forward Transconductance VDS=-5V, ID=-20A 50 VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current TJ=125C Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance -0.7 G DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=-15V, f=1MHz A -5 -1.3 VGS=-10V, ID=-20A Units V VDS=-30V, VGS=0V IDSS Max m m S -1 V -34 A 2830 pF 430 pF 365 pF 14 28 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 50 70 nC Qg(4.5V) Total Gate Charge 25 35 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr f=1MHz VGS=-10V, VDS=-15V, ID=-20A 9 nC 12 nC 12.5 ns 18 ns 125 ns 66 ns IF=-20A, di/dt=500A/ms 62 Body Diode Reverse Recovery Charge IF=-20A, di/dt=500A/ms 32 ns nC VGS=-10V, VDS=-15V, RL=0.75W, RGEN=3W A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R qJA t 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150C. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: July 2017 www.aosmd.com Page 2 of 6 AONR21357 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 -10V -4.5V VDS=-5V 80 80 -4V 60 40 -ID (A) -ID (A) 60 -3.5V 125C 40 25C 20 20 VGS=-3V 0 0 0 1 2 3 4 1 5 2 4 5 -VGS (Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Figure 1: On-Region Characteristics (Note E) 20 Normalized On-Resistance 1.6 15 RDS(ON) (mW) 3 VGS=-4.5V 10 5 VGS=-10V VGS=-10V ID=-20A 1.4 1.2 VGS=-4.5V ID=-16A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 1.0E+01 ID=-20A 1.0E+00 125C 1.0E-01 15 -IS (A) RDS(ON) (mW) 20 125C 1.0E-02 10 25C 1.0E-03 5 1.0E-04 25C 0 1.0E-05 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: July 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AONR21357 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 VDS=-15V ID=-20A 3500 8 Ciss Capacitance (pF) -VGS (Volts) 3000 6 4 2 2500 2000 1500 1000 Coss 500 Crss 0 0 0 10 20 30 40 50 60 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 500 TJ(Max)=150C TC=25C 400 RDS(ON) limited 10ms 10.0 100ms DC 1ms 10ms 1.0 TJ(Max)=150C TC=25C 0.1 0.0 0.01 Power (W) -ID (Amps) 10 -VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 5 300 200 100 0.1 1 10 -VDS (Volts) -VGS> or equal to -4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=4.2C/W 1 Single Pulse 0.1 PDM Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: July 2017 www.aosmd.com Page 4 of 6 AONR21357 60 60 45 45 Current rating -ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 15 30 15 0 0 0 25 50 75 100 125 150 0 TCASE (C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=55C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: July 2017 www.aosmd.com Page 5 of 6 AONR21357 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + + DUT Qgd Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs VDC td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: July 2017 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6