fiAMOSPEC MEDIUM-POWER NPN SILICON TRANSISITORS NPN ... designed for switching and wide-band amplifier applications 2N5427 FEATURES Thru * DC Current Gain Specified to 7 Amperes. 2N5430 * Low Collector-Emitter Saturation Voltage- Voe(say=1-2V (Max) @ Ie=7.0A * Excellent Safe Operating Areas 7 AMPERE Package in the Compact TO-66 Case POWER TRANSISTORS MAXIMUM RATINGS NPN SILICON 80-100 VOLTS Characteristic Symbol | 2N5427 | 2N5429 | Unit 40 WATTS 2N5428 2N5430 Collector-Base Voltage Vero 80 100 Vv Collector-Emitter Voltage Veo 80 100 V Emitter-Base Voltage Veso 6.0 M Collector Current - Continuous le 7.0 A Base Current-Continuous lb 1.0 A Total Power Dissipation @T,=25C Pp 40 WwW Derate above 25C 228 mWw/c Operating and Storage Junction Ty. Tst C Temperature Range -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Re jc 4.37 C/W FIGURE -1 POWER DERATING Pp , POWER DISSIPATIO =~ ai nn 2 0 25 50 75 100 125 150 Tc, TEMPERATURE(? C) 175 200 PIN 1.BASE 2.EMINTER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 30.60 | 3252 B 13.85 | 1416 c 6.54 7.22 D 9.50 | 10.50 E 17.26 | 18.46 F 0.76 0.92 G 1.38 1.65 H 2416 | 24.78 | 13.84 | 15.60 J 3.32 3.92 K 486 5.342N5427 thru 2N5430 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) 2N5427, 2N5428 | Vero (sus) 80 V (I,= 50 mA, I= 0) 2N5429, 2N5430 100 Collector Cutoff Current loex mA (Veg= 75 V, Vago = -1-5V ) 2N5427, 2N5428 0.1 (Veg= 90 V, Veron = -1-5V ) 2N5429, 2N5430 0.1 (Voe= 75 V, Vegioin= 71-9VT C= 150C ) 2N5427, 2N5428 1.0 (Veg= 90 V, Veciom= -1-5V, T= 150C ) 2N5429, 2N5430 1.0 Collector Cutoff Current lego mA (Vep= Rated Vega: |e= 0) 0.1 Emitter Cutoff Current leso mA (Vep= 6.0V, 1,=0 ) All Types 0.1 ON CHARACTERISTICS (1) DC Current Gain hFE (Ig= 0.5 A, Vog= 2.0V ) 2N5427, 2N5429 30 2N5428, 2N5430 60 (Ig= 2.0 A, Vog= 2.0V ) 2N5427, 2N5429 30 120 2N5428, 2N5430 60 240 (Ig= 5.0 A, Vog= 2.0V ) 2N5427, 2N5429 20 2N5428, 2N5430 40 Collector-Emitter Saturation Voltage VcE(sat) V (1,= 2.0 A, I,= 0.2A) 0.7 (Ig= 7.0 A, 1p= 0.7A ) 1.2 Base-Emitter Saturation Voltage VpE(sat) Vv (p= 2.0A, I,= 0.2A ) 1.2 (lg= 7.0 A, Ip= 0.7A ) 2.0 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (2) fy MHz (1g= SOOMA,Veg= 10 V, f = 10MHz ) 20 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f, = hy. f test2N5427 thru 2N5430 NPN a ACTIVE-REGION SAFE OPERATING AREA (SOA) 10 5.0 3.0 = < 5 Boe x 02 C -=Bonding Wire Limit 6 0-15 .-Thermally Limited T.=25C (Singe Puse) 5 Second Breakdown Limit 0.05 a 2N5427 8 0.02 2 0.01 4 2 5 7 10 30 50 70 100 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) DC CURRENT GAIN Tye178C 26C 45C hee , OC CURRENT GAIN 0.02 0.05 0.1 0.2 05 1.0 2.0 5.07.0 Ic , COLLECTOR CURRENT (AMP) TURN-OFF TIME = Nw OAn~o ts = t, TIME (us) ef Nowa 2 a 0.03 0.01 0.01 0.02003 06.05 0.1 le , COLLECTOR CURRENT (AMP) 02 03 0507 1 2 3 5 7 10 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) V VOLTAGE (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate c-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on T yp9=200 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided T.yeigS200C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown COLLECTOR SATURATION REGION Tye25C [c= 100 mA 05 #10 2030 50 10 20 30 50 100 200 500 ls, BASE CURRENT (mA) ON" VOLTAGES 1.0 0.8 Vee (set) @ Icflp=10 Vee@ Vce*2.0V e > 2S ix) Veesaty @ loan t0 0 0.01 0.02 005 =O 0.2 05 1.0 20 5.0 10 Ic , COLLECTOR CURRENT (AMP)