306 D MM 7929237 0030128 7 MPSS Cy. SGS-THOMSON SG S-THOMSON SF. MICROELECTRONICS ~ TRE151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x 221 mils METALLIZATION: SCHEMATIC DIAGRAM 0 - Top Al : Back Au/Cr/Ni/Au BACKSIDE THICKNESS: 6100 A 8 e DIE THICKNESS: 16 + 2 mils * PASSIVATION: P-Vapox 8 * BONDING PAD SIZE: Source 56 x 43 mils Vv R I* Gate 18x18 mils pss DS (on) D RECOMMENDED WIRE BONDING: 60 V 0.055 2 40A Source Al - max 20 mils Gate Al - max 7 mils N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS ideal for high speed switching applications. Die geometry MC-0076 SOURCE M GATE Drain on backside * With Pinpe max. 0.83C/W June 1988 V2 649IRF151 CHIP 30E > M@ 7929237 0030229 9 mm SG S-THOMSON GUARANTEED PROBED ELECTRICAL CHARACTERISTICS (Tj= 25C, Note 1) Parameters Test Conditions Min. | Typ. | Max. | Unit Vier) pss Drain-source Ip= 250 pA Veg= 0 60 Vv breakdown voliage Te 39-13 mS loss Zero gate voltage Vps= Max Rating 250 | pA drain current Vps= Max Rating x 0.8 T)= 125C 1000 | 2A less Gate-body leakage Veg= +20 V 100 | nA current Ves (th) Gate threshold Vos = Ves Ip = 250 pA 2 4 Vv voltage Ros (on) Static drain-source Veg= 10 V Ip=1A 55 | mQ on resistance NOTES: 1 - Due to probe testing limitations de parameters only are tested. They are measured using pulse techni- ques: pulse width <300 ps, duty cycle <2% 2 - For detailed device characteristics please refer to the discrete device datasheet 2/2 . co 7 SGS THOMSON