U290/291
Vishay Siliconix
Document Number: 70235
S-41139—Rev. A, 07-Jun-04
www.vishay.com
1
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max ()ID(off) Typ (pA) tON Typ (ns)
U290 −4.0 to −10 3 10 14
U291 −1.5 to −4.5 7 10 14
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: U290 < 3
DFast Switching—tON: 14 ns
DHigh Off-Isolation
DLow Capacitance: 20 pF
DLow Insertion Loss
DLow Error Voltage
DHigh-Speed Analog Circuit Performance
DNegligible “Off-Error,” Excellent Accuracy
DGood Frequency Response
DEliminates Additional Buffering
DAnalog Switches
DChoppers
DSample-and-Hold
DNormally “On” Switches
DCurrent Limiters
DESCRIPTION
The U290/U291 are high-performance JFET analog switches
designed to offer low on-resistance and fast switching. This
series features the lowest on-resistance of any JFET in the
industry today.
TheTO-206AC (TO-52) hermetically sealed case makes this
series suitable for military applications.
For similar products in TO-226A (TO-92) packaging, see the
J105/106/107 data sheet.
Top View
U290
U291
G and Case
TO-206AC
(TO-52)
D
S
1
23
Ordering Information: U290—E3
U291—E3
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage −30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 100 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 4 mW/_C above 25_C
U290/291
Vishay Siliconix
www.vishay.com
2Document Number: 70235
S-41139—Rev. A, 07-Jun-04
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
U290 U291
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = −1 A , VDS = 0 V −35 −30 −30
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 3 nA −4.0 −10 −1.5 −4.5 V
Saturation Drain CurrentbIDSS VDS = 10 V, VGS = 0 V 500 200 mA
Gate Reverse Current
IGSS
VGS = −15 V, VDS = 0 V −0.02 −1−1 nA
Gate Reverse Current IGSS TA = 125_C−0.01 −1−1A
Gate Operating CurrentbIGVDG = 10 V, ID = 25 mA −0.01
nA
Drain Cutoff Current
ID( ff)
VDS = 5 V, VGS = −10 V 0.01 1 1 nA
Drain Cutoff Current ID(off) TA = 125_C−0.005 1 1 A
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 3 7
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source Forward Transconductancebgfs
VDS = 10 V ID = 25 mA f = 1 kHz
55
mS
Common-Source Output Conductancebgos
VDS = 10 V, ID = 25 mA, f = 1 kHz 5mS
Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 1 mA, f = 1 kHz 3 7
Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 120 160 160
pF
Common-Source Reverse Transfer Capacitance Crss VDS = 0 V, VGS = −15 V, f = 1 MHz 20 30 30 pF
Equivalent Input Noise Voltage enVDG = 10 V, ID = 25 mA, f = 1 kHz 3 nV⁄√Hz
Switching
Turn On Time
td(on) 6 15 15
Turn-On Time trVDD = 1.5 V, VGS
(
H
)
= 0 V 8 20 20
ns
Turn
-
Off Time
td(off)
VDD = 1
.
5 V
,
VGS(H) = 0 V
See Switching Diagram 5 15 15 ns
T
urn-
Off Ti
me tf9 20 20
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NVA
b. Pulse test: PW v300 s duty cycle v3%.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
0−6−8−10−2
8
4
2
0
20
16
8
4
0
10 100 1000
2 .0
1.6
0
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current
VGS(off) − Gate-Source Cutoff Voltage (V) ID − Drain Current (mA)
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 10 V, VGS = 0 V
IDSS
rDS
TA = 25_C
VGS(off) = −3 V
−5 V
−8 V
6 1.2
0.8
0.4
−4
12
rDS(on) − Drain-Source On-Resistance ( Ω )
rDS(on) − Drain-Source On-Resistance ( Ω )
IDSS − Saturation Drain Current (mA)
U290/291
Vishay Siliconix
Document Number: 70235
S-41139—Rev. A, 07-Jun-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
−55 25 125−15 85
500
68210
400
200
100
0
0−8−4−2−10
8
4
0
20
0304010 50
16
8
4
0
Turn-On Switching Turn-Off Switching
On-Resistance vs. Temperature Output Characteristics
TA − Temperature (_C) VDS − Drain-Source Voltage (V)
VGS(off) − Gate-Source Cutoff Voltage (V) ID − Drain Current (mA)
ID = 10 mA
rDS changes X 0.7%/_C
tr approximately independent of ID
VDD = 1.5 V, RG = 50
VGS(L) = −10 V
td(on) @ ID = 10 mA
td(off)
VGS(off) = −8 V
VGS(off) = −3 V
td(off) independent of device VGS(off)
VDD = 1.5 V, VGS(L) = −10 V
10
8
4
2
0
6
−35 5 45 65 105
300
4
−6
12
20
VGS(off) = −5 V
tr
VGS(off) = −3 V
−5 V
−8 V
td(on) @ ID = 30 mA
VGS = 0 V
−1.0 V
−0.5 V
−1.5 V
−2.0 V
−2.5 V
−3.0 V
tf
Switching Time (ns)
Switching Time (ns) ID − Drain Current (mA)
rDS(on) − Drain-Source On-Resistance ( Ω )
200
100
10
1
1 10 100
150
0−12 −16−8−4−20
120
90
60
30
0
Capacitance vs. Gate-Source Voltage Transconductance vs. Drain Current
VGS − Gate-Source Voltage (V) ID − Drain Current (mA)
VDS = 0 V
f = 1 MHz
Ciss
Crss
VDS = 10 V
f = 1 kHz
TA = −55_C
125_C
25_C
VGS(off) = −5 V
C (pF)
gfs − Forward Transconductance (mS)
51
51
1 k
VIN
Scope
VDD
RL
OUT
VGS(H)
VGS(L)
U290/291
Vishay Siliconix
www.vishay.com
4Document Number: 70235
S-41139—Rev. A, 07-Jun-04
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
20
10
1
0.1
1 10 100 10 100 1 k 100 k10 k
300
0−6
260
180
140
100
−8−10−4−2
30
24
12
6
0
012168420
100
10
1
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
Output Conductance vs. Drain Current Noise Voltage vs. Frequency
ID − Drain Current (mA) f − Frequency (Hz)
VGS(off) − Gate-Source Cutoff Voltage (V) VDG − Drain-Gate Voltage (V)
VDG = 10 V
ID = 10 mA
gfs and gos @ VDS = 10 V
VGS = 0 V, f = 1 kHz
gfs
gos
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
100 mA
100 mA
25 mA
1 pA
100 pA
10 pA
100 nA
1 nA
10 nA
TA = −55_C
125_C
220 18
25 mA
VDS = 10 V
f = 1 kHz
VGS(off) = −5 V
25_C
nVen⁄Hz
√)(− Noise Voltage
gos − Output Conductance (mS)gos − Output Conductance (mS)
IG − Gate Leakage
gos − Output Conductance (mS)gfs − Forward Transconductance (mS)
SWITCHING TIME TEST CIRCUIT
U290 U291
VGS(L) −12 V −7 V
RL*50 50
ID(on) 28 mA 27 mA
* Non-Inductive
Input Pulse Sampling Scope
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 M
Input Capacitance 1.5 pF
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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