BPW34, BPW34S
www.vishay.com Vishay Semiconductors
Rev. 2.1, 23-Aug-11 1Document Number: 81521
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BPW34 is a PIN photodiode with high speed and high
radiant sensitivity in miniature, flat, top view, clear plastic
package. It is sensitive to visible and near infrared radiation.
BPW34S is packed in tubes, specifications like BPW34.
FEATURES
• Package type: leaded
• Package form: top view
• Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8583
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm)
BPW34 50 ± 65 430 to 1100
BPW34S 50 ± 65 430 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW34 Bulk MOQ: 3000 pcs, 3000 pcs/bulk Top view
BPW34S Tube MOQ: 1800 pcs, 45 pcs/tube Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 3 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W
BPW34, BPW34S
www.vishay.com Vishay Semiconductors
Rev. 2.1, 23-Aug-11 2Document Number: 81521
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD70 pF
VR = 3 V, f = 1 MHz, E = 0 CD25 40 pF
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo350 mV
Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K
Short circuit current EA = 1 klx Ik70 μA
Ee = 1 mW/cm2, λ = 950 nm Ik47 μA
Temperature coefficient of IkEe = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K
Reverse light current
EA = 1 klx, VR = 5 V Ira 75 μA
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira 40 50 μA
Angle of half sensitivity ϕ± 65 deg
Wavelength of peak sensitivity λp900 nm
Range of spectral bandwidth λ0.1 430 to 1100 nm
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz
Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf100 ns
20 40 60 80
1
10
100
1000
100
94 8403
VR = 10 V
Tamb - Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
VR = 5 V
λ = 950 nm
010080
60
4020
BPW34, BPW34S
www.vishay.com Vishay Semiconductors
Rev. 2.1, 23-Aug-11 3Document Number: 81521
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Illuminance
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
10
94 8417
VR = 5 V
λ = 950 nm
Ee - Irradiance (mW/cm2)
Ira - Reverse Light Current (µA)
0.1
1
10
100
1000
94 8418
101102103104
VR=5V
EA- Illuminance (lx)
I - Reverse Light Current (µA)
ra
0.1 1 10
1
10
100
100
94 8419
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
λ = 950 nm
V
R
- Reverse Voltage (V)
I
ra
- Reverse Light Current (µA)
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1 100
110
350 550 750 950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8420
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 0
Srel - Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
BPW34, BPW34S
www.vishay.com Vishay Semiconductors
Rev. 2.1, 23-Aug-11 4Document Number: 81521
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
TUBE PACKAGING DIMENSIONS in millimeters
Fig. 9 - Drawing Proportions not scaled
96 12186
18800
Stopper
10.7
9.5
214.5
Quantity per tube: 45 pcs
Quantity per box: 1800 pcs
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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