MS3024
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS3024 is a common base hermetically sealed silicon NPN
microwave transistor that utilizes a fishbone emitter ballasted
geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at any phase angle
under rated conditions. The MS3024 was designed for Class C
amplifier applications in the 1.0 – 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCC Collector-Supply Voltage 35 V
IC Device Current 1 A
PDISS Power Dissipation 29 W
TJ Junction Temperature 200 °°C
TSTG Storage Temperature –65 to +200 °°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 6 °°C/W
FeaturesFeatures
• EMITTER BALLASTED
• INFINITE VSWR CAPABILITY AT RATED CONDITIONS
• REFRACTORY/GOLD METALLIZATION
• HERMETIC STRIPAC PACKAGE
• POUT = 5.0 W MIN. WITH 7.0 dB GAIN AT 2.0 GHz
RF AND MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS3024
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATIC Value
Symbol Test Conditions Min. Typ. Max. Units
BVCBO IC = 1 mA IE = 0 mA 45 V
BVEBO IE = 1 mA IC = 0 mA 3.5 V
BVCER IC = 5 mA RBE = 10 ΩΩ 45 V
ICBO VCB = 28V 2.5 mA
hFE VCE = 5 V IC = 500 mA 15 120
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Units
POUT f = 2 GHz PIN = 1 W VCE = 28 V 5 6 W
çC * f = 2 GHz PIN = 1 W VCE = 28 V 35 40 %
GP * f = 2 GHz PIN = 1 W VCE = 28 V 7 7.8 dB
COB f = 1 MHz VCB = 28 V 10 PF
IMPEDANCE DATAIMPEDANCE DATA
Freq. ZIN (ΩΩ) ZCL (ΩΩ)
1.0 GHz 3.0 = j 6.0 7.2 + j 6.0
1.5 GHz 3.5 + j 8.0 3.7 – j 0.2
1.7 GHz 4.0 + j 9.0 2.8 – j 2.3
2.0 GHz 4.8 + j 10.5 2.3 – j 4.5
MS3024
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
TEST CIRCUITTEST CIRCUIT
MS3024
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
