Silicon Beamless Schottky Diodes Features @ For Microwave MIC Assembly & Automated High Volume Manufacturing Lines Mechanically Rugged Design @ Three Barrier Heights for Optimized Mixer Performance Wide Product Range: Series Pair, Ring, Bridge, and 8 Diode Ring bok Description The Beamless Diode family is designed for a high m@ Use in ring or crossover designs in double degree of device reliability in both commercial and balanced mixer designs industrial uses. They are designed to offer the utmost @ Virtually any LO requirement can be met with in performance as well as achieving price sensitive choice of barrier height. cost targets for commercial systems. 100% DC tested on wafer. @ Available in film frame or waffle pack. Electrical Specifications at 25C VE Cy1.2 Ip = 1.0 mA AVE VR = OV, f= 1 MHz Rg Ve (V)@ Outline Part ; (mV) Ip = 1.0 mA (pF) IF=5mA 10 LA Drawing Number Band Barrier Min. Max. (mv) Min. Max. (Ohms) Min. Number Ring Quad? DMF3926-000 Ss Low 200 260 10 0.3 0.5 5.0 2 551-002 DME3927-000 Ss Medium 300 400 10 0.3 0.5 5.0 3 551-002 DMJ3928-000 Ss High 500 600 10 0.3 0.5 5.0 4 551-002 DMF3942-000 x Low 250 310 10 0.15 0.30 8.0 2 551-002 DME3943-000 x Medium 325 425 10 0.15 0.30 8.0 3 551-002 DMJ3944000 x High 550 650 10 0.15 0.30 8.0 4 551-002 Bridge Quad? DMF3929-000 Ss Low 200 260 10 0.3 0.5 5.0 2 551-004 DME3930-000 Ss Medium 300 400 10 0.3 0.5 5.0 3 551-004 DMJ393 1-000 Ss High 500 600 10 0.3 0.5 5.0 4 551-004 1. Cy represents total capacitance. 2. Maximum Cy unbalance @ OV, 1 MHz = .025 pF. 3. Matching Criteria Ve @ 1 mA < 15 mV available for matched sets. 3-8 Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com e Visit our web site: www.alphaind.comSilicon Beamless Schottky Diodes Electrical Specifications (Continued) VE Cy! 2 Ip = 1.0 mA AVE Vp = OV, f = 1 MHz Rg Ve (V)@ Outline Part Drive (mV) Ip = 1.0 mA (pF) IpF=5mA 10 LA Drawing Number Band Level (mV) (Ohms) Number Min. Max. Max. Min. Max. Max. Min. Series Pair DMF3932-000 Ss Low 200 260 10 0.3 0.5 5 2 551-012 DME3933-000 Ss Medium 300 400 10 0.3 0.5 5 3 551-012 DMJ3934000 Ss High 500 600 10 0.3 0.5 5 4 551-012 Back to Back Ring Series Pair? DMF3935-000 Ss Low 200 260 10 0.3 0.5 5.0 2 551-056 DME3936000 Ss Medium 300 400 10 0.3 0.5 5.0 3 551-056 DMJ3937000 Ss High 500 600 10 0.3 0.5 5.0 4 551-056 OctoQuad Ring* DMF3938-000 S-X Low 400 520 15 0.15 0.3 16 4 556-020 DME3939-000 S-X Medium 600 800 15 0.15 0.3 16 6 556-020 DMJ3940-000 S-X High 1000 1200 15 0.15 0.3 16 8 556-020 1. Cy represents total capacitance. 2. Maximum Cy unbalance @ OV, 1 MHz = .025 pF. 3. Matching Criteria Ve @ 1 mA < 15 mV available for matched sets. 4. Matching criteria Ve @ 1 mA < 20 mV available for matched sets. Maximum Ratings Packing Methods 1. Vacuum release gel-pack. Tsta: 65C to +175C ger Top: -65C to +150C 2. Wafer on film frame (rejects are marked Pgiss CW: 75 mW/junction with ink). IMAX: 50 mA Volts Diced, ready for pick and place PIV: Vp rating Unsawn whole wafer, 7 mil thick, max. Assembly and Handling Procedure The process flow for assembly is: Wire Bonding 1. Die attach using nonconductive epoxy Two methods can be used to connect wire, ribbon, or 2. Wire bond wire mesh to the chips: 3. Encapsulation nonconductive epoxy m Thermocompression Die Attach Methods @ Ballbonding All leadless chips are compatible with both eutectic Alpha recommends use of pure gold wire. and conductive epoxy die attach methods. Eutectic processes use SnAu or SnPb solder. Non conductive die attach is recommended. Alpha Industries [617] 935-5150 Fax [617] 824-4579 E-mail sales@alphaind.com Visit our web site: www.alphaind.com 3-9Silicon Beamless Schottky Diodes Typical Bonding Configuration 3 Ring Quad Crossover Quad Bond Pad Bond Pad 4 Spice Parameters (Per Junction and Barrier Height) Part Number Ig Rs Tp Cy Eg Vp Ipv Prefix A Ohm N $s pF M ev eV Xy1 Fe By A DMF 2.5E-7 4 1.04 1.E-11 0.42 0.32 0.69 0.51 2 0.5 2 1E-5 DME 1.3E-9 4 1.04 1.E-11 0.39 0.37 0.69 0.65 2 0.5 3 1E-5 DMJ 9E-13 4 1.04 1.E-11 0.39 0.42 0.69 0.84 2 0.5 3 1E-5 Outline Drawings 551-002 551-004 me 0.015 + 001 C0.381mm + .02Smm> rea 0.015 + .001 2 .381mm + 025mm) mA) 0.015 + .001 SCHEMATIC G y r t SCHEMATIC ae a 3 381mm + 025mm) 3 0.015 + 001 0035x0035 | 7p | Ls CO.38Imm 4 .025mm) 4089x,089mm) 4 PLACES a YS L | 0035x0035 .089x.089mm) 1 t 4 PLACES 0,006 + .001 4 (118mm + O2Smm> 0.006 + 001 4 18mm z 025mm) 3-10 Alpha Industries [617] 935-5150 e Fax [617] 824-4579 e E-mail sales@alphalnd.com Visit our web site: www.alphalnd.com551-012 3 pe 0.015 + 001 O.381mm + 025mm) 1 2 2 SCHEMATIC t 3 ee _] : 0015 + .001 7 C.38Imm + 25mm) 0035x.0035 oL) 2) | 6089x.089mm> 3 PLACES 1 1 0.006 + .001 J (O.18mm + 025mm> 556-020 2 1 3 | 0.020+.001 |, (0.508 + .025mm) | SCHEMATIC 0.020 + .001 1 3 (0.508 + 0.25mm) .004X.004 YY 4 {.10X.10mm) 4 PLACES | - 0.002 | (.05mm) 0.006 + .001 (0.18 + .025mm) t 551-056 24 3 SCHEMATIC te 0.015 + 001 O.381mm + .025mm> te 0035x.0035 | 0.015 + .001 CO.381mm + .025mm> .089x.089mm) 4 PLACES 006 + ,001 CO.18mMMm + 25mm) Silicon Beamless Schottky Diodes Alpha Industries [617] 935-5150 e Fax [617] 824-4579 e E-mail sales@alphalnd.com Visit our web site: www.alphalnd.com 3-11