SIEMENS BARE66 Silicon PIN Diode Array @ Surge protection device @ Two PIN diodes, series configuration @ Designed for surge overvoltage clamping in antiparaliel connection Type Marking Ordering Code = [Pin Configuration Package 1) (taped) 1 2 3 BAR66 PMs Q62702-A1473 Al C2 Ci/A2 |SOT-23 Maximum Ratings Parameter Symbol BAR66 Unit Reverse voltage VR 150 Vv Forward current fe 200 mA Forward current. (te = 11S) Ie 20 A Power dissipation T, < 25C 1) Prot 250 mw Operating temperature range Top -55...+150 C Storage temperature range Tstg -55...4150 C Thermal Resistance Junction-ambient_1) Rin JA < 450 KAN 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 180 Edition A01, 05.05.94SIEMENS BARES Characteristics per Diode at Ta = 25 C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. Reverse current Va Vv In=5 pA 150 |- - Forward voltage Ve Vv fe = 50 mA : 0.95 1.2 Diode capacitance Cr pF Ve = 35 V,f-1M Hz - 0.4 0.6 Vr = 0 V ,&100 MHz - 0.35 {- Forward resistance rt Q iF = 10 mA, f= 100 MHz - 1.5 - Charge carrier lifetime Tr ps [-=10 MA,R=6 MA, iR=3MA - 0.7 - Series inductance Ls - 2 - nH Dioden capacitance C, = f(VR) f=1MHz FHDO7 132 1.0 ee Cy pF | 0.8 | : i | | 0.6 u tm | f= 1 MHZ | es 0.4L - 100 MHz | 02+ ot | | 0 10 20 Y 35 Semiconductor Group 181 Edition AQ1, 05.05.94