Mar ki ng A4
1.9
0.950.95
2.9
0.4
1. 3
2. 4
1.0
SOT-23 Plastic-Encapsulated Diodes
BAV70LT1 SWITCHING DIODE
FEATURES
Power dissipation
P
D: 225 mW(Tamb=25℃)
Forward Current
I
F: 200 mA
Reverse Voltage
V
R: 70 V
Operating and storage junction temperature range
T
J, Tstg: -55℃ to +15℃
ELE CTRICAL CHARACTERIS TICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 70 V
Reverse voltage leakage current IR V
R=70V 2.5
µA
Forward voltage VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
mV
Diode capacitance CD V
R=0V,f=1MHz 1.5
pF
Reverse recovery tim e t r r
IF=IR=10mA
IR=1mA ,VR=5V
RC=100Ω
6
nS
Unit: mm
SOT -23
Transys
Electronics
LI
M
ITE
D
