BCV47 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV47 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING CODE: FG SOT-23 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO 80 UNITS V VCEO VEBO 60 V 10 V IC ICM 500 mA 800 mA IB PD 100 mA 350 mW TJ, Tstg JA -65 to +150 C 357 C/W ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=30V IEBO VBE=10V MAX 100 UNITS nA 100 nA BVCEO IC=10mA 60 V BVCBO IC=10A IE=100nA 80 V BVEBO VCE(SAT) 10 VBE(SAT) IC=100mA, IC=100mA, hFE VCE=5.0V, IC=1.0mA 2,000 hFE hFE VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA 10,000 fT VCE=5.0V, IC=30mA, f=100MHz V IB=0.1mA IB=0.1mA 1.0 V 1.5 V 4,000 220 MHz R2 (20-November 2009) BCV47 SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: FG R2 (20-November 2009) w w w. c e n t r a l s e m i . c o m