2N6547 Silicon NPN Transistor High Voltage, High Speed Switch TO-3 Type Package Description: The 2N6547 is a silicon NPN transistor in a TO-3 type package designed for high voltage, high-speed power switching in inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V line-operated switch-mode applications. Applications: D Switching Regulators D PWM Inverters and Motor Controls D Deflection Circuits D Solenoid and Relay Drivers Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Device Dissipation (TC = +100C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Maximum Lead temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . +275C Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 100mA, IB = 0 400 - - V VCEX(sus) IC = 8A, Vclamp = 450V, TC = +100C 450 - - V 300 - - V VCEV = 850V, VBE(off) = 1.5V - - 1.0 mA VCEV = 850V, VBE(off) = 1.5V, TC = +100C - - 4.0 mA ICER VCE = 850V, RBE = 50, TC = +100C - - 5.0 mA IEBO VEB = 9V, IC = 0 - - 1.0 mA IS/b VCE = 100V, t = 1.0s (non-repetitive) 0.2 - - A hFE VCE = 2V, IC = 5A 12 - 60 VCE = 2V, IC = 10A 6 - 30 IC = 10A, IB = 2A - - 1.5 V IC = 10A, IB = 2A, TC = +100C - - 2.5 V IC = 15A, IB = 3A - - 5.0 V IC = 10A, IB = 2A - - 1.6 V IC = 10A, IB = 2A, TC = +100C - - 1.6 V VCE = 10V, IC = 500mA, f = 1MHz 6 - 28 MHz 125 - 500 pF - - 0.05 s - - 1.0 s OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage IC = 15A, Vclamp = 300V, TC = +100C Collector Cutoff Current Emitter Cutoff Current ICEV Second Breakdown Second Breakdown Collector Current with Base Forward Bias ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance fT Cob VCB = 10V, IE = 0, f = 1MHz Switching Characteristics (Resistive Load) Delay Time td Rise Time tr Storage Time ts - - 4.0 s Fall Time tf - - 0.7 s - 2.0 - s 0.09 - - s - - 5.0 s - - 1.5 s VCC = 250V, IC = 10A, IB1 = IB2 =2A, tp = 300s, Duty Cycle 2% Switching Characteristics (Inductive Load, Clamped) Storage Time tsv Fall Time tfi Storage Time tsv Fall Time tfi IC = 10A peak, Vclamp = 450V, IB1 = 2A, VBE(off) = 5V IC = 10A peak, Vclamp = 450V, IB1 = 2A, VBE(off) = 5V, TJ = +100C Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case