TVS Diode Arrays (SPA(R) Diodes) SESD Series Ultra Low Capacitance Diode Arrays SESD Series Ultra Low Capacitance Diode Arrays RoHS Pb GREEN ELV Description The SESD series Ultra Low Capacitance Diode Arrays provides signal integrity-preserving unidirectional ESD protection for the world's most challenging high speed serial interfaces. Compelling packaging options including the standard 1004 DFN 2.5 mm x 1.0 mm layout, the board space-friendly 0802 DFN and 1103 DFN minimize trace layout complexity, and save significant PCB space. The 0402 DFN provides the most flexibility for PCB layout purposes. This series is rated in excess of 20kV contact ESD protection (IEC 61000-4-2) while maintaining extremely low leakage and dynamic resistance, and is offered in the industry's most progressive and popular footprints. The SESD series sets higher standards for signal integrity and usability. Pinout 0402 DFN array 1 0802 DFN array 2 Features 4 3 * 0.20pF TYP capacitance * AEC-Q101 qualified * ESD, IEC 61000-4-2, * Moisture Sensitivity Level(MSL-1) 20kV contact, 20kV air 1 3 G 1004 DFN array 2 1103 DFN array 1 2 3.G 4 5 10 9 8.G 7 6 3 4 G 2 1 5 6 * Low clamping voltage of 9.2V @ IPP=2.0A (tP=8/20s) * ELV Compliant * Low profile DFN array packages * PPAP capable * RoHS Compliant and Lead Free * Facilitates excellent signal integrity Applications * USB 3.1, 3.0, 2.0 Bottom View * Tablet PC and external storage with high speed interfaces * HDMI 2.0, 1.4a, 1.3 * DisplayPort(TM) Functional Block Diagram 1 2 4 * Thunderbolt * Applications requiring high ESD performance in small packages * LVDS interfaces * Automotive applications * V-by-One(R)) 5 1 2 * C onsumer, mobile and portable electronics Additional Information G, 3, 8 3 0802/1004 DFN array 0402 DFN array Datasheet 1 2 3 4 G 5 Resources Samples 6 1103 DFN array (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD.12/16/20 TVS Diode Arrays (SPA(R) Diodes) SESD Series Ultra Low Capacitance Diode Arrays Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20s) 2.0 A TOP Operating Temperature -55 to 125 C TSTOR Storage Temperature -55 to 150 C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics - (TOP=25C) Parameter Test Conditions Min Typ Max Units 0.22 pF Input Capacitance @ VR = 0V, f = 3GHz 0.20 Breakdown Voltage VBR @ IT=1mA 9.00 V Reverse Working Voltage Reverse Leakage Current IL @ VRWM=5.0V 25 Clamping Voltage VCL @ IPP=2.0A 9.20 Peak Pulse Current IEC61000-4-2 (Contact) 20 IEC 61000-4-2 (Air) 20 nA 2.0 A kV Insertion Loss Diagram - 1103 DFN Array Insertion Loss Diagram 0 0 -5.0 -5.0 S21 Insertion Loss (dB) S21 Insertion Loss (dB) V 50 V tP=8/20s ESD Withstand Voltage 7.0 -10.0 -15.0 -20.0 -25.0 -30.0 -10.0 -15.0 -20.0 -25.0 -30.0 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) Component IV Curve 1.0 0.8 0.6 0.4 Current (mA) 0.2 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Voltage (V) (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD.12/16/20 TVS Diode Arrays (SPA(R) Diodes) SESD Series Ultra Low Capacitance Diode Arrays USB3.0 Eye Diagram 5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern Without SESD Device With SESD Device Soldering Parameters Pre Heat Pb - Free assembly - Temperature Min (Ts(min)) 150C - Temperature Max (Ts(max)) 200C - Time (min to max) (ts) 60 - 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3C/second max TS(max) to TL - Ramp-up Rate Reflow 3C/second max - Temperature (TL) (Liquidus) 217C - Temperature (tL) 60 - 150 seconds Peak Temperature (TP) 260+0/-5 C Time within 5C of actual peak Temperature (tp) 20 - 40 seconds Ramp-down Rate 6C/second max Time 25C to peak Temperature (TP) 8 minutes Max. Do not exceed 260C tP TP Critical Zone TL to TP Ramp-up Temperature Reflow Condition TL T S(max) tL Ramp-dow Ramp-down Preheat T S(min) tS 25 time to peak temperature Time (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD.12/16/20 TVS Diode Arrays (SPA(R) Diodes) SESD Series Ultra Low Capacitance Diode Arrays Package Dimensions -- 0402 DFN Array Millimeters Symbol Inches Min Typ Max Min Typ A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0 - 0.05 0 - 0.002 0.13 ref. A3 Max 0.005 ref. D 0.55 0.60 0.65 0.022 0.024 0.026 E 0.95 1.00 1.05 0.037 0.039 0.041 K 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.018 0.020 0.022 L2 0.20 0.25 0.30 0.008 0.010 0.012 b 0.10 0.15 0.20 0.004 0.006 0.008 e1 0.35 BSC 0.014 BSC e2 0.65 BSC 0.026 BSC Symbol Millimeters Inches A 0.60 0.024 B 1.00 0.039 C 0.23 0.009 0.014 D 0.35 D1 0.35 0.014 E 0.15 0.006 F 0.30 0.012 Pad Layout Embossed Carrier Tape & Reel Specification -- 0402 DFN Array D0 T Y P2 P0 E1 D1 F B0 K0 Section Y - Y A0 Y P1 User Feeding Direction W Symbol Millimeters A0 0.70+/-0.05 B0 1.15+/-0.05 D0 o 1.55 + 0.05 D1 o 0.40 +/- 0.05 E1 1.75+/-0.10 F 3.50+/-0.05 K0 0.47+/-0.05 P0 4.00+/-0.10 P1 2.00+/-0.05 P2 2.00+/-0.05 W 8.00 +/-0.10 T 0.20+/-0.05 Pin 1 Location (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD.12/16/20 TVS Diode Arrays (SPA(R) Diodes) SESD Series Ultra Low Capacitance Diode Arrays Package Dimensions -- 0802 DFN Array Millimeters Symbol Inches Min Typ Max Min Typ Max A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0 0.02 0.05 0 -- 0.002 0.127 ref A3 0.005 ref. D 0.50 0.60 0.70 0.020 0.024 0.028 E 1.90 2.00 2.10 0.075 0.079 0.083 b 0.15 0.20 0.25 0.006 0.008 0.010 b1 0.25 0.30 0.36 0.010 0.012 0.014 L 0.25 0.30 0.36 0.010 0.012 0.014 L1 0.35 0.40 0.45 0.014 0.016 0.018 L2 0.05 BSC e 0.40 BSC 0.002 BSC 0.016 BSC e1 0.45 BSC 0.018 BSC e2 0.25 BSC 0.010 BSC N 4 4 4xA 4xB G 2xF Symbol Millimeters A 0.35 0.014 B 0.20 0.008 E C D E 2xF Inches C 0.30 0.012 D 0.50 0.020 E 0.45 BSC 0.018 BSC F 0.125 BSC 0.005 BSC G 0.40 BSC 0.016 BSC Recommended Soldering Pattern G Embossed Carrier Tape & Reel Specification -- 0802 DFN Array D0 T Y P2 P0 E1 D1 F B0 K0 Section Y - Y A0 Y P1 User Feeding Direction W Symbol Millimeters A0 0.81+/-0.05 B0 2.21+/-0.05 D0 o 1.50+0.10/-0 D1 o 0.40 min E1 1.75+/-0.10 F 3.50+/-0.05 K0 0.46+/-0.05 P0 4.00+/-0.10 P1 2.00+/-0.10 P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.25+/-0.20 Pin 1 Location (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD.12/16/20 TVS Diode Arrays (SPA(R) Diodes) SESD Series Ultra Low Capacitance Diode Arrays A1 D LxN 8xb 5 A1 D 6 Package Dimensions -- 1004 DFN Array LxN 6 4 5 4 7 Gn d 8 R1 Gn d 3 L1 2x E 2 b1 2x b1 2x N=10 9 2 SIDE VIEW 1 SIDE VIEW 1 BOTTOM VIEW BOTTOM VIEW (Fr ont ) END VIEW 2 END VIEW 1 A 1 SIDE VIEW 2 (FrVIEW ont ) 2 SIDE TOP VIEW END VIEW 1 A3 A TOP VIEW N=10 A 2xR e A3 END VIEW 2 2x F 2x F 2x F AA 2x2xF1F1 2x 2x F1 F1 2x D12x D1 B B G14x G 4x G G14x G D1 B D1 B G1 4x G 4x G 8x C 8x D E 8x D E 8x C E Max Min Typ Max A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0.00 0.02 0.05 0 -- 0.002 0.127 ref. Recommended 8x C 0.005 ref. D 0.90 1.00 1.10 0.035 0.039 0.043 E 2.40 2.50 2.60 0.094 0.098 0.102 b 0.15 0.20 0.25 0.006 0.008 0.010 b1 0.35 0.40 0.45 0.014 0.016 0.018 L 0.33 0.38 0.43 0.013 0.015 0.017 L1 0.00 0.10 0.15 0.000 0.004 0.006 e 0.50 BSC e1 0.50 BSC 0.020 BSC 0.020 BSC R 0.08 BSC 0.003 BSC R1 0.13 BSC 0.005 BSC N 10 10 Millimeters Inches A 1.20 0.047 B 2.20 0.087 C 0.50 0.020 D 0.20 0.008 D1 0.40 0.016 E 0.20 0.008 F 0.30 0.012 F1 0.20 0.008 G 0.50 BSC 0.020 BSC G1 1.00 BSC 0.039 BSC E 8x C Recommended G1 4x G 8x D 8x D Typ Symbol 2x F A Inches Min A3 9 Gn d 3 2xR 1 e1e R1 Gn d 8 L1 e1 2x E Millimeters Symbol 7 8xb Alternate Alternate Pad Layout Pad Layout Embossed Carrier Tape & Reel Specification -- 1004 DFN Array D0 T Y P2 P0 Symbol E1 D1 F B0 K0 Section Y - Y A0 Y P1 W Millimeters A0 1.20+/-0.05 B0 2.70+/-0.05 D0 o 1.50+0.10/-0 D1 o 0.50 min E1 1.75+/-0.10 F 3.50+/-0.05 K0 0.51+/-0.10 P0 4.00+/-0.10 P1 4.00+/-0.10 P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.25+/-0.05 (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD.12/16/20 TVS Diode Arrays (SPA(R) Diodes) SESD Series Ultra Low Capacitance Diode Arrays Package Dimensions -- 1103 DFN Array Millimeters Symbol Inches Min Typ Max Min Typ Max A 0.33 0.38 0.43 0.013 0.015 0.017 A1 0.00 0.02 0.05 0 -- 0.002 0.127 ref. A3 0.005 ref. D 0.70 0.80 0.90 0.027 0.031 E 2.70 2.80 2.90 0.106 0.110 0.114 b 0.15 0.20 0.25 0.006 0.008 0.010 b1 0.25 0.30 0.35 0.010 0.012 0.014 L 0.30 0.35 0.40 0.012 0.014 0.016 L1 0.50 0.55 0.60 0.019 0.021 0.024 L2 0.05 BSC e 0.40 BSC 0.016 BSC e1 0.45 BSC 0.018 BSC e2 0.40 BSC 0.016 BSC N 6 6 0.035 0.002 BSC Symbol Millimeters Inches A 0.80 0.031 B 2.80 0.110 C 0.35 0.014 D 0.30 0.012 E 0.45 0.018 0.004 F 0.10 F1 0.15 0.006 G 0.40 BSC 0.016 BSC G1 0.45 BSC 0.018 BSC Pad Layout Embossed Carrier Tape & Reel Specification -- 1103 DFN Array D0 T Y P2 Symbol P0 E1 D1 F B0 K0 Section Y - Y A0 Y P1 W Millimeters A0 1.00+/-0.05 B0 3.00+/-0.05 D0 o 1.50+0.10/-0 D1 o 0.50 min E1 1.75+/-0.10 F 3.50+/-0.05 K0 0.51+/-0.05 P0 4.00+/-0.10 P1 4.00+/-0.10 P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.25+/-0.05 (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD.12/16/20 TVS Diode Arrays (SPA(R) Diodes) SESD Series Ultra Low Capacitance Diode Arrays Part Numbering System Part Marking System SESD xxxx Q x U G 0020 - 090 Breakdown Voltage 090: 9.0V (TYP) SESD product Package 0402 0802 1004 1103 DFN Array Package C Input Capacitance 0020: 0.20pF (TYP) Common GND pin 0402 Directional U: Unidirectional 4C No of channel 2: Two Channels 4: Four Channels 6: Six Channels 1004 MC 0802 6C 1103 Ordering Information Part Number Package Ordering Part Number Minimum Order Quantity SESD0402Q2UG-0020-090 0402 DFN Array RF2946-000 50,000 SESD0802Q4UG-0020-090 0802 DFN Array RF3076-000 25,000 SESD1004Q4UG-0020-090 1004 DFN Array RF3077-000 25,000 SESD1103Q6UG-0020-090 1103 DFN Array RF3078-000 25,000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD.12/16/20