SESD0402Q2UG-0020-090 - TE CONNECTIVITY

Speciﬁcations are subject to change without notice.

Revised: GD.12/16/20

TVS Diode Arrays (SPA ® Diodes)

SESD Series Ultra Low Capacitance Diode Arrays

Applications

• USB 3.1, 3.0, 2.0

• HDMI 2.0, 1.4a, 1.3

• DisplayPort(TM)

• V-by-One®)

• Thunderbolt

• LVDS interfaces

• Consumer, mobile and

portable electronics

• Tablet PC and external

storage with high speed

interfaces

• Applications requiring

high ESD performance in

small packages

• Automotive applications

Pinout

Bottom View

1 2 3.G 4 5

10 9 8.G 7 6

12

3

1

23

456

G

12

34

G

Functional Block Diagram

154212

G

3G, 3, 8

143256

SESD Series Ultra Low Capacitance Diode Arrays

1103 DFN array

0802 DFN array

Description

The SESD series Ultra Low Capacitance Diode Arrays

provides signal integrity-preserving unidirectional ESD

protection for the world’s most challenging high speed

serial interfaces. Compelling packaging options including

the standard 1004 DFN 2.5 mm x 1.0 mm layout, the

board space-friendly 0802 DFN and 1103 DFN minimize

trace layout complexity, and save signiﬁcant PCB space.

The 0402 DFN provides the most ﬂexibility for PCB

layout purposes. This series is rated in excess of 20kV

contact ESD protection (IEC 61000-4-2) while maintaining

extremely low leakage and dynamic resistance, and is

offered in the industry’s most progressive and popular

footprints. The SESD series sets higher standards for signal

integrity and usability.

Features

ELV

RoHS

Pb

GREEN

• 0.20pF TYP capacitance

• ESD, IEC 61000-4-2,

±20kV contact, ±20kV air

• Low clamping voltage

of 9.2V @ IPP=2.0A

(tP=8/20μs)

• Low proﬁle DFN array

packages

• Facilitates excellent

signal integrity

• AEC-Q101 qualiﬁed

• Moisture Sensitivity

Level(MSL-1)

• ELV Compliant

• RoHS Compliant and

Lead Free

• PPAP capable

0802/1004 DFN array 0402 DFN array

1004 DFN array

0402 DFN array

1103 DFN array

Additional Information

Datasheet Samples

Resources

Speciﬁcations are subject to change without notice.

Revised: GD.12/16/20

TVS Diode Arrays (SPA ® Diodes)

SESD Series Ultra Low Capacitance Diode Arrays

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those

indicated in the operational sections of this speciﬁcation is not implied.

Absolute Maximum Ratings

Electrical Characteristics - (TOP=25°C)

Parameter Test Conditions Min Ty p Max Units

Input Capacitance @ VR = 0V, f = 3GHz 0.20 0.22 pF

Breakdown Voltage VBR @ IT=1mA 9.00 V

Reverse Working Voltage 7. 0 V

Reverse Leakage Current IL @ VRWM=5.0V 25 50 nA

Clamping Voltage VCL @ IPP=2.0A 9.20 V

Peak Pulse Current tP=8/20μs 2.0 A

ESD Withstand Voltage IEC61000-4-2 (Contact) ±20 kV

IEC 61000-4-2 (Air) ±20

Insertion Loss Diagram

1.E+06

1.E+07 1.E+08 1.E+10

Frequency (Hz)

1.E+09

-20.0

0

S21 Insertion Loss (dB)

-10.0

-5.0

-15.0

-25.0

-30.0

Insertion Loss Diagram - 1103 DFN Array

1.E+06

1.E+07 1.E+08 1.E+10

Frequency (Hz)

1.E+09

-20.0

0

S21 Insertion Loss (dB)

-10.0

-5.0

-15.0

-25.0

-30.0

Symbol Parameter Value Units

IPP Peak Current (tp=8/20μs) 2.0 A

TOP Operating Temperature -55 to 125 °C

TSTOR Storage Temperature -55 to 150 °C

Component IV Curve

-2 -1 01

234 56 78

Current (mA)

Voltage (V)

1.0

0.8

0.6

0.4

0.2

0.0

-0.2

-0.4

-0.6

-0.8

-1.0

910

Speciﬁcations are subject to change without notice.

Revised: GD.12/16/20

TVS Diode Arrays (SPA ® Diodes)

SESD Series Ultra Low Capacitance Diode Arrays

Time

Temperature

TP

TL

TS(max)

TS(min)

25

tP

tL

tS

time to peak temperature

Preheat

P

re

h

eat

Ramp-up

R

am

p

-u

p

Ramp-down

R

amp-

d

o

w

Critical Zone

TL to TP

C

ritical Zon

e

T

L

to

T

P

Soldering Parameters

USB3.0 Eye Diagram

Without SESD Device With SESD Device

5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern

Reﬂow Condition Pb – Free assembly

Pre Heat

- Temperature Min (Ts(min))150°C

- Temperature Max (Ts(max))200°C

- Time (min to max) (ts)60 – 180 secs

Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max

TS(max) to TL - Ramp-up Rate 3°C/second max

Reﬂow - Temperature (TL) (Liquidus) 217°C

- Temperature (tL)60 – 150 seconds

Peak Temperature (TP)260+0/-5 °C

Time within 5°C of actual peak Temperature (tp)20 – 40 seconds

Ramp-down Rate 6°C/second max

Time 25°C to peak Temperature (TP)8 minutes Max.

Do not exceed 260°C

Speciﬁcations are subject to change without notice.

Revised: GD.12/16/20

TVS Diode Arrays (SPA ® Diodes)

SESD Series Ultra Low Capacitance Diode Arrays

Pad Layout

Package Dimensions — 0402 DFN Array

Symbol Millimeters Inches

Min Ty p Max Min Ty p Max

A 0.33 0.38 0.43 0.013 0.015 0.017

A1 0 - 0.05 0 - 0.002

A3 0.13 ref. 0.005 ref.

D 0.55 0.60 0.65 0.022 0.024 0.026

E 0.95 1.00 1.05 0.037 0.039 0.041

K 0.35 0.40 0.45 0.014 0.016 0.018

L1 0.45 0.50 0.55 0.018 0.020 0.022

L2 0.20 0.25 0.30 0.008 0.010 0.012

b 0.10 0.15 0.20 0.004 0.006 0.008

e1 0.35 BSC 0.014 BSC

e2 0.65 BSC 0.026 BSC

Symbol Millimeters Inches

A 0.60 0.024

B 1. 0 0 0.039

C 0.23 0.009

D 0.35 0.014

D1 0.35 0.014

E 0.15 0.006

F 0.30 0.012

Embossed Carrier Tape & Reel Speciﬁcation — 0402 DFN Array

W

D0

D1

P2P0

E1

F

Section Y - Y

A0

Y

P

1

T

K0

B0

User Feeding Direction

Pin 1 Location

Symbol Millimeters

A0 0.70+/-0.05

B0 1.15+/-0.05

D0 ø 1.55 + 0.05

D1 ø 0.40 +/- 0.05

E1 1.75+/-0.10

F3.50+/-0.05

K0 0.47+/-0.05

P0 4.00+/-0.10

P1 2.00+/-0.05

P2 2.00+/-0.05

W8.00 +/-0.10

T0.20+/-0.05

Speciﬁcations are subject to change without notice.

Revised: GD.12/16/20

TVS Diode Arrays (SPA ® Diodes)

SESD Series Ultra Low Capacitance Diode Arrays

Package Dimensions — 0802 DFN Array

Symbol Millimeters Inches

Min Ty p Max Min Ty p Max

A 0.33 0.38 0.43 0.013 0.015 0.017

A1 0 0.02 0.05 0 -- 0.002

A3 0.127 ref 0.005 ref.

D 0.50 0.60 0.70 0.020 0.024 0.028

E 1.90 2.00 2.10 0.075 0.079 0.083

b 0.15 0.20 0.25 0.006 0.008 0.010

b1 0.25 0.30 0.36 0.010 0.012 0.014

L 0.25 0.30 0.36 0.010 0.012 0.014

L1 0.35 0.40 0.45 0.014 0.016 0.018

L2 0.05 BSC 0.002 BSC

e 0.40 BSC 0.016 BSC

e1 0.45 BSC 0.018 BSC

e2 0.25 BSC 0.010 BSC

N4 4

Symbol Millimeters Inches

A 0.35 0.014

B 0.20 0.008

C 0.30 0.012

D 0.50 0.020

E 0.45 BSC 0.018 BSC

F 0.125 BSC 0.005 BSC

G 0.40 BSC 0.016 BSC

Embossed Carrier Tape & Reel Speciﬁcation — 0802 DFN Array

W

D0

D1

P2P0

E1

F

Section Y - Y A0

Y

P1

T

K0

B0

User Feeding Direction

Pin 1 Location

Symbol Millimeters

A0 0.81+/-0.05

B0 2.21+/-0.05

D0 ø 1.50+0.10/-0

D1 ø 0.40 min

E1 1.75+/-0.10

F3.50+/-0.05

K0 0.46+/-0.05

P0 4.00+/-0.10

P1 2.00+/-0.10

P2 2.00+/-0.05

W8.00+0.30/-0.10

T0.25+/-0.20

4xB

4xA

G

E

2xF

D

C

2xF E

GRecommended

Soldering Pattern

Speciﬁcations are subject to change without notice.

Revised: GD.12/16/20

TVS Diode Arrays (SPA ® Diodes)

SESD Series Ultra Low Capacitance Diode Arrays

Package Dimensions — 1004 DFN Array

A

SIDE VIEW 1 SIDE VIEW 2

(Fr ont )

TOP VIEWBOTTOM VIEW

E

A1

LxN

D8xb

A3

e1

e

L1 2x

123

45

Gn d

b1 2x

69N=10

Gn d

R1

2xR

END VIEW 1END VIEW 2

78

Recommended

Pad Layout

A

B

4x G

G1

E

8x C

8x D

D1

2x F1

2x F

E

8x C

8x D

2x D1

2x F

2x F1

A

B

4x G

G1

Alternate

A

SIDE VIEW 1 SIDE VIEW 2

(Fr ont )

TOP VIEWBOTTOM VIEW

E

A1

LxN

D8xb

A3

e1

e

L1 2x

123

45

Gn d

b1 2x

69N=10

Gn d

R1

2xR

END VIEW 1END VIEW 2

78

Recommended

Pad Layout

A

B

4x G

G1

E

8x C

8x D

D1

2x F1

2x F

E

8x C

8x D

2x D1

2x F

2x F1

A

B

4x G

G1

Alternate

Symbol Millimeters Inches

A 1.20 0.047

B 2.20 0.087

C 0.50 0.020

D 0.20 0.008

D1 0.40 0.016

E 0.20 0.008

F 0.30 0.012

F1 0.20 0.008

G 0.50 BSC 0.020 BSC

G1 1.00 BSC 0.039 BSC

Symbol Millimeters Inches

Min Ty p Max Min Ty p Max

A 0.33 0.38 0.43 0.013 0.015 0.017

A1 0.00 0.02 0.05 0 -- 0.002

A3 0.127 ref. 0.005 ref.

D 0.90 1.00 1.10 0.035 0.039 0.043

E 2.40 2.50 2.60 0.094 0.098 0.102

b 0.15 0.20 0.25 0.006 0.008 0.010

b1 0.35 0.40 0.45 0.014 0.016 0.018

L 0.33 0.38 0.43 0.013 0.015 0.017

L1 0.00 0.10 0.15 0.000 0.004 0.006

e 0.50 BSC 0.020 BSC

e1 0.50 BSC 0.020 BSC

R 0.08 BSC 0.003 BSC

R1 0.13 BSC 0.005 BSC

N 10 10

Embossed Carrier Tape & Reel Speciﬁcation — 1004 DFN Array

W

D0

D1

P2P0

E1

F

Section Y - Y A0

Y

P

1

T

K0

B0

Symbol Millimeters

A0 1.20+/-0.05

B0 2.70+/-0.05

D0 ø 1.50+0.10/-0

D1 ø 0.50 min

E1 1.75+/-0.10

F3.50+/-0.05

K0 0.51+/-0.10

P0 4.00+/-0.10

P1 4.00+/-0.10

P2 2.00+/-0.05

W8.00+0.30/-0.10

T0.25+/-0.05

Speciﬁcations are subject to change without notice.

Revised: GD.12/16/20

TVS Diode Arrays (SPA ® Diodes)

SESD Series Ultra Low Capacitance Diode Arrays

Package Dimensions — 1103 DFN Array

Pad Layout

Symbol Millimeters Inches

A 0.80 0.031

B 2.80 0.110

C 0.35 0.014

D 0.30 0.012

E 0.45 0.018

F 0.10 0.004

F1 0.15 0.006

G 0.40 BSC 0.016 BSC

G1 0.45 BSC 0.018 BSC

Symbol Millimeters Inches

Min Ty p Max Min Ty p Max

A 0.33 0.38 0.43 0.013 0.015 0.017

A1 0.00 0.02 0.05 0 -- 0.002

A3 0.127 ref. 0.005 ref.

D 0.70 0.80 0.90 0.027 0.031 0.035

E 2.70 2.80 2.90 0.106 0.110 0.114

b 0.15 0.20 0.25 0.006 0.008 0.010

b1 0.25 0.30 0.35 0.010 0.012 0.014

L 0.30 0.35 0.40 0.012 0.014 0.016

L1 0.50 0.55 0.60 0.019 0.021 0.024

L2 0.05 BSC 0.002 BSC

e 0.40 BSC 0.016 BSC

e1 0.45 BSC 0.018 BSC

e2 0.40 BSC 0.016 BSC

N6 6

W

D0

D1

P2P0

E1

F

Section Y - Y

A0

Y

P

1

T

K0

B0

Embossed Carrier Tape & Reel Speciﬁcation — 1103 DFN Array

Symbol Millimeters

A0 1.00+/-0.05

B0 3.00+/-0.05

D0 ø 1.50+0.10/-0

D1 ø 0.50 min

E1 1.75+/-0.10

F3.50+/-0.05

K0 0.51+/-0.05

P0 4.00+/-0.10

P1 4.00+/-0.10

P2 2.00+/-0.05

W8.00+0.30/-0.10

T0.25+/-0.05

Speciﬁcations are subject to change without notice.

Revised: GD.12/16/20

TVS Diode Arrays (SPA ® Diodes)

SESD Series Ultra Low Capacitance Diode Arrays

C MC

4C 6C

Part Marking System

0402

1004

Part Numbering System

SESD Q

xxxx G

DFN Array Package

Package

1103 Directional

U: Unidirectional

Common GND pin

–

SESD product

0402

No of channel

Input Capacitance

0020: 0.20pF (TYP)

Breakdown Voltage

090: 9.0V (TYP)

2: Two Channels

4: Four Channels

U

0020

090

x

6: Six Channels

1004

0802

Ordering Information

Part Number Package Ordering Part Number Minimum Order Quantity

SESD0402Q2UG-0020-090 0402 DFN Array RF2946-000 50,000

SESD0802Q4UG-0020-090 0802 DFN Array RF3076-000 25,000

SESD1004Q4UG-0020-090 1004 DFN Array RF3077-000 25,000

SESD1103Q6UG-0020-090 1103 DFN Array RF3078-000 25,000

1103

0802

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