AO3414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3414 is Pb-free (meets ROHS & Sony 259 specifications). AO3414L is a Green Product ordering option. AO3414 and AO3414L are electrically identical. VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50m (VGS = 4.5V) RDS(ON) < 63m (VGS = 2.5V) RDS(ON) < 87m (VGS = 1.8V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 8 V 15 1.4 W 0.9 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A 3.2 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 4.2 TA=25C Power Dissipation A Maximum 20 RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W AO3414 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250A, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 15 Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 1 V A VGS=2.5V, ID=3.7A 52 63 m VGS=1.8V, ID=3.2A 67 87 m 1 V 2 A VDS=5V, ID=4.2A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance nA 50 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Rg 100 70 Forward Transconductance Crss 0.6 A 41 VSD Output Capacitance 5 58 TJ=125C gFS Coss V TJ=55C VGS=4.5V, ID=4.2A IS Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=4.2A VGS=5V, VDS=10V, RL=2.7, RGEN=6 11 0.76 m S 436 pF 66 pF 44 pF 3 6.2 nC 1.6 nC 0.5 nC 5.5 ns 6.3 ns 40 ns 12.7 ns trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/s 12.3 Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/s 3.5 ns nC A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev4 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 10 8V 4.5V VDS=5V 8 2V 3V 2.5V 8 ID(A) ID (A) 12 6 4 VGS=1.5V 4 125C 2 25C 0 0 0 1 2 3 4 5 0 0.5 100 Normalized On-Resistance RDS(ON) (m) 1.5 2 2.5 1.8 VGS=1.8V 80 VGS=2.5V 60 40 VGS=4.5V 20 VGS=2.5 1.6 VGS=1.8V 1.4 ID=4.2A VGS=4.5V 1.2 1 0.8 0 4 8 12 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 100 90 1E+00 ID=4.2A 80 125C 1E-01 70 IS (A) RDS(ON) (m) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125C 60 50 1E-02 25C 1E-03 25C 40 1E-04 30 1E-05 20 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO3414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VGS (Volts) Capacitance (pF) VDS=10V ID=4.2A 4 3 2 1 600 Ciss 400 Coss 200 0 0 0 2 4 6 0 8 10.0 10 20 TJ(Max)=150C TA=25C 15 20 TJ(Max)=150C TA=25C 100s 15 RDS(ON) limited 10s 1ms Power (W) ID (Amps) 100.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 0.1s 10ms 1.0 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 5 1s ZJA Normalized Transient Thermal Resistance Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000