BC817A BC817A Silicon NPN Epitaxial Transistor Description: The BC817A is designed for audio frequency general amplifier applications Features: Excellent hFE Linearity Complementary to BC807A Chip Appearance Chip Size 440umx440um Chip Thickness 21020um Bonding Pad Size Base 110umx110um Emitter 110umx110um Front Metal Al Backside Metal Au(As) Scribe line width 50um Wafer Size 6 inch Electrical Characteristics( Ta=25) Characteristic Symbol Test Condition Min Max Unit Collector Cutoff Current ICBO VCB=45V, IE=0 0.1 uA Emitter Cutoff Current IEBO VEB=5V, IC=0 0.1 uA Collector-Base Breakdown Voltage BVCBO IC=0.1mA Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Base Breakdown Voltage BVEBO IE=0.1mA DC Current Gain Collector Saturation Voltage Jan 2005 hFE VCE(sat) Version :0.0 VCE=1V, IC=100mA IC=500mA,IB=50mA 50 V 45 V 5.0 120 V 560 0.6 Page 1 of 1 V