AP9979GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V Single Drive Requirement RDS(ON) 48m Surface Mount Package ID Low Gate Charge D 20A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9979GJ) are available for low-profile applications. G G D D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +25 V ID@TC=25 Continuous Drain Current, VGS @ 10V 20 A ID@TC=100 Continuous Drain Current, VGS @ 10V 13 A 50 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 34.7 W Linear Derating Factor 0.28 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.6 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data and specifications subject to change without notice 1 200806242 AP9979GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 60 - - V - 0.06 - V/ VGS=10V, ID=13A - - 48 m VGS=4.5V, ID=7A - - 60 m BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=13A - 18 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=+25V - - +100 nA ID=13A - 11 18 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC VDS=30V - 7 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=13A - 20 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 19 - ns tf Fall Time RD=2.3 - 3 - ns Ciss Input Capacitance VGS=0V - 990 1560 pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.8 Min. Typ. IS=13A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=13A, VGS=0V, - 32 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 37 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9979GH/J 50 50 10V 7.0V 5.0V T C =25 C ID , Drain Current (A) 40 40 4.5V 30 20 V G =3.0V 10 5.0V 4.5V 30 20 V G =3.0V 10 0 0 0 2 4 6 8 10 0 2 V DS , Drain-to-Source Voltage (V) 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2.0 ID=7A T C =25 o C Normalized RDS(ON) 60 RDS(ON) (m) 10V 7.0V o T C = 150 C ID , Drain Current (A) o 50 I D =13A V G =10V 1.6 1.2 0.8 40 0.4 30 2 4 6 8 -50 10 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 12 1.5 T j =150 o C Normalized VGS(th) (V) IS(A) 9 T j =25 o C 6 1.1 0.7 3 0 0.3 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9979GH/J f=1.0MHz 10000 14 I D = 13 A V DS = 30 V V DS =38V V DS = 48 V 10 8 C iss 1000 C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss 100 4 C rss 2 0 10 0 10 20 30 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (R thjc) 1 100us ID (A) 10 1ms 1 10ms 100ms DC T C =25 o C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V T j =25 o C QG T j =150 o C 20 4.5V QGS QGD 10 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 E1 B1 F1 e Millimeters SYMBOLS F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 9979GH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D Millimeters A SYMBOLS c1 D1 E1 E A1 B2 F B1 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 0.60 0.87 1.14 c c1 0.40 0.50 0.60 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 5.20 5.35 5.50 E 6.70 7.00 7.30 E1 5.40 5.80 6.20 e ---- 2.30 ---- F 5.88 6.84 7.80 1.All Dimensions Are in Millimeters. c e 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-251 Part Number 9979GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence 6