/TechnicalInformation IGBT- IGBT-modules IGBT- FS75R12KE3G /IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1200 V DC ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 75 100 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 150 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 355 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V Gatethresholdvoltage IC = 3,00 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C VCE sat A A typ. max. 1,70 2,00 2,15 V V VGEth 5,0 5,8 6,5 V VGE = -15 V ... +15 V QG 0,70 C Internalgateresistor Tvj = 25C RGint 10 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 5,30 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,20 nF Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Turn-ondelaytime,inductiveload IC = 75 A, VCE = 600 V VGE = 15 V RGon = 4,7 Tvj = 25C Tvj = 125C td on 0,26 0,29 s s Risetime,inductiveload IC = 75 A, VCE = 600 V VGE = 15 V RGon = 4,7 Tvj = 25C Tvj = 125C tr 0,03 0,05 s s Turn-offdelaytime,inductiveload IC = 75 A, VCE = 600 V VGE = 15 V RGoff = 4,7 Tvj = 25C Tvj = 125C td off 0,42 0,52 s s Falltime,inductiveload IC = 75 A, VCE = 600 V VGE = 15 V RGoff = 4,7 Tvj = 25C Tvj = 125C tf 0,07 0,09 s s Turn-onenergylossperpulse IC = 75 A, VCE = 600 V, LS = 70 nH VGE = 15 V RGon = 4,7 Tvj = 25C Tvj = 125C Eon 7,00 mJ mJ Turn-offenergylossperpulse IC = 75 A, VCE = 600 V, LS = 70 nH VGE = 15 V RGoff = 4,7 Tvj = 25C Tvj = 125C Eoff 9,50 mJ mJ SCdata VGE 15 V, VCC = 900 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC 0,35 K/W Temperatureunderswitchingconditions Tvj op -40 125 preparedby:MM dateofpublication:2013-10-02 approvedby:RS revision:3.1 1 tP 10 s, Tvj = 125C 300 A C /TechnicalInformation IGBT- IGBT-modules FS75R12KE3G Diode/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C DC ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1200 V IF 75 A IFRM 150 A It 1200 As /CharacteristicValues min. typ. max. 1,65 1,65 2,15 Forwardvoltage IF = 75 A, VGE = 0 V IF = 75 A, VGE = 0 V Tvj = 25C Tvj = 125C Peakreverserecoverycurrent IF = 75 A, - diF/dt = 2000 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C IRM 90,0 100 A A Recoveredcharge IF = 75 A, - diF/dt = 2000 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Qr 7,00 14,0 C C Reverserecoveryenergy IF = 75 A, - diF/dt = 2000 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Erec 3,00 6,00 mJ mJ VF V V Thermalresistance,junctiontocase /Diode/perdiode RthJC 0,58 K/W Temperatureunderswitchingconditions Tvj op -40 125 min. typ. max. R25 5,00 k R/R -5 5 % P25 20,0 mW C NTC-/NTC-Thermistor /CharacteristicValues Ratedresistance TC = 25C R100 DeviationofR100 TC = 100C, R100 = 493 Powerdissipation TC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 t.b.d. K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 t.b.d. K Specificationaccordingtothevalidapplicationnote. preparedby:MM dateofpublication:2013-10-02 approvedby:RS revision:3.1 2 /TechnicalInformation IGBT- IGBT-modules FS75R12KE3G /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min Internalisolation (1,IEC61140) basicinsulation(class1,IEC61140) AI203 Creepagedistance -/terminaltoheatsink -/terminaltoterminal 10,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 7,5 mm Comperativetrackingindex CTI > 225 Thermalresistance,casetoheatsink //permodule Paste=1W/(m*K)/grease=1W/(m*K) Strayinductancemodule Moduleleadresistance,terminals-chip TC=25C,//perswitch Storagetemperature VISOL kV 2,5 min. typ. RthCH 0,009 LsCE 21 nH RCC'+EE' 1,80 m Tstg -40 125 C M5 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Weight G 300 g preparedby:MM dateofpublication:2013-10-02 approvedby:RS revision:3.1 Mountingtorqueformodulmounting 3 max. K/W /TechnicalInformation IGBT- IGBT-modules FS75R12KE3G IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 150 150 Tvj = 25C Tvj = 125C 120 120 105 105 90 90 75 60 45 45 30 30 15 15 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 IGBT- (Typical) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 20 Tvj = 25C Tvj = 125C 135 105 14 90 12 E [mJ] 16 75 10 60 8 45 6 30 4 15 2 5 6 7 Eon, Tvj = 125C Eoff, Tvj = 125C 18 120 0 0,0 IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=4.7,RGoff=4.7,VCE=600V 150 IC [A] 75 60 0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 135 IC [A] IC [A] 135 8 9 VGE [V] 10 11 0 12 preparedby:MM dateofpublication:2013-10-02 approvedby:RS revision:3.1 4 0 25 50 75 IC [A] 100 125 150 /TechnicalInformation IGBT- IGBT-modules FS75R12KE3G IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=75A,VCE=600V IGBT- transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 20 1 Eon, Tvj = 125C Eoff, Tvj = 125C 18 ZthJC : IGBT 16 14 ZthJC [K/W] E [mJ] 12 10 8 0,1 6 4 i: 1 2 3 4 ri[K/W]: 0,00663 0,0202 0,17619 0,14698 i[s]: 0,0000119 0,002364 0,02601 0,06499 2 0 0 5 10 15 20 25 RG [] 30 35 40 0,01 0,001 45 IGBT- RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=4.7,Tvj=125C 0,01 0,1 t [s] 1 10 Diodetypical) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 175 150 IC, Modul IC, Chip 135 Tvj = 25C Tvj = 125C 150 120 125 105 90 IF [A] IC [A] 100 75 75 60 45 50 30 25 15 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:MM dateofpublication:2013-10-02 approvedby:RS revision:3.1 5 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] /TechnicalInformation IGBT- IGBT-modules FS75R12KE3G Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=4.7,VCE=600V Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=75A,VCE=600V 10 8 Erec, Tvj = 125C Erec, Tvj = 125C 9 7 8 6 7 5 E [mJ] E [mJ] 6 5 4 4 3 3 2 2 1 1 0 0 25 50 75 IF [A] 100 125 0 150 Diode transientthermalimpedanceDiode,Inverter ZthJC=f(t) 1 ZthJC [K/W] ZthJC : Diode 0,1 i: 1 2 3 4 ri[K/W]: 0,01097 0,03294 0,29244 0,24365 i[s]: 0,0000119 0,002364 0,02601 0,06499 0,01 0,001 0,01 0,1 t [s] 1 10 preparedby:MM dateofpublication:2013-10-02 approvedby:RS revision:3.1 6 0 5 10 15 20 25 RG [] 30 35 40 45 /TechnicalInformation IGBT- IGBT-modules FS75R12KE3G /circuit_diagram_headline J /packageoutlines Infineon preparedby:MM dateofpublication:2013-10-02 approvedby:RS revision:3.1 7 /TechnicalInformation IGBT- IGBT-modules FS75R12KE3G (www.infineon.com) Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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