DIL CMBT3906 SILICON EPITAXIAL TRANSISTOR P-N-P transistor Marking PACKAGE OUTLINE DETAILS CMBT3906 = 2A ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.14 0.38 \(0-09 { en LL 0:20 Pin configuration | i 1= BASE 2.6 J. ._--...] Jt 14 2 = EMITTER 2.4 | 1.2 3 = COLLECTOR RO.1 __-! | ; f (004) ' 2 || RO.O5 3 1.02 012 | (.002) ' ) 0.60 0 00 oo? L115 > 0.40 1.80 0.90 2 ABSOLUTE MAXIMUM RATINGS Collectorbase voltage (open emitter) -VcBo max. 40V Collector-emitter voltage (open base) -VCEO max. 40 V Emitterbase voltage (open collector) ~VEBO max. 5 V Collector current (d.c.) -Ic max. 200 mA Total power dissipation up to Tamb = 25 C Prot max. 250 mW D.C. current gain -Ic = 10 mA; -VcE=1V hpg 100 to 300 Transition frequency at f = 100 MHz -Ic = 10 mA; -Vcg = 20 V fr min. 250 MHz 110EDIL CMBT3906 RATINGS Limiting values Collector-base voltage (open emitter) -VcBO max. 40 V Collector-emitter voltage (open base} -VCEO max. 40 V Emitterbase voltage (open collector) -VEBO max. 5 V Collector current (d.c.) -Ic max. 200 mA Total power dissipation up to Tamb = 25 C Ptot max. 250 mW Storage temperature Tstg ~55 to +150 C THERMAL CHARACTERISTICS Tj= P(Rth j++ Rents + Rh s-a) + Tamb Thermal resistance from junction to ambient Rth jva = 500 K/W CHARACTERISTICS Tamb = 25 C unless otherwise specified Collector-emitter breakdown voltage -Ic = 1 mA; lp = 0 -V(BR)CEO min. 40 V Collector-base breakdown voltage -Ic = 10pA; Ig = 0 -V(BR)CBO min. 40 V Emitterbase breakdown voltage Ig = 10 pA; Ic =0 -V(BR)EBO min. 5 V Collector cut-off current -VcE = 30 V; -VEB =3 V -ICEX max. 50 nA Base current with reverse biased emitter junction -IBEX max, 50 nA Output capacitance at f = 100 kHz Ip =0;-Vcp=5V Ce max, 4,5 pF Input capacitance at f = 100 kHz Ic = 0; -VpE = 0,5 V Ce max. 10 pF Saturation voltages -Ic = 10 mA; -Ip = 1 mA -VcEsat max. 0,25 V -I = 50 mA; -lp =5 mA ~VcEsat max. O4AV ~-I = 10 mA; -Igp = 1 mA ~-VBEsat max. 0,85 V min. 0,65 V -Ic = 50 mA; Ip = 5 mA -VBEsat max. 0,95 V D.C. current gain -Ic = 0,1 mA; -Vcg =1V hfe min. 60 -Ic = 1mA;-Vcgp=1V hEE min. 80 -Ic = 10 mA; -VcE=1V hrE min. 100 max. 300 111CDIL CMBT3906 -Ic = 50 mA; -VcE=1V hre min. 60 ~-Ic = 100 mA; -Vcg =1V hfe min. 30 Transition frequency at f = 100 MHz -I = 10mA; -Vcg = 20V fy min. 250 MHz Noise figure at Rg = 1 kQ ~Ic = 100A; -VcR=5V f = 10 Hz to 15,7 kHz F max. 4 dB Small Signal Current Gain VcE = 10V; Ic = 1 mA; f = 1 KHz hfe min. 100 max. 400 112