ML9XX11,ML9XX16,ML9XX22 SERIES
TYPE
NAME ML925B11F / ML925B16F / ML925B22F
MITSUBISHI LASER DIODES
InGaAsP DFB LASER DIODES
DESCRIPTION
ML9XX11,ML9XX16 and ML9XX22 series are DFB
(Distributed Feedback) laser diodes emitting light beam with
emission wave length of 1470 ~ 1610nm.
They are well suited for light source in long distance digital
transmission application of coarse WDM.
They are hermetically sealed devices with the photo diode for
optical output monitoring.
FEATURES
Low threshold current (typical
10mA)
Wide temperature range
operation
High - side mode suppression ratio (typical
40dB)
High speed response (typical
0.2nsec)
MQW* active
layer
FSBH** structure fabricated by MOCVD process
* Multiple Quantum Well
** Facet Selective - growth Buried Hetero structure
APPLICATION
Long - distance digital transmission
system
Coarse WDM application
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
MITSUBISHI
ELECTRIC
mA
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ith Threshold current CW -10 30 mA
Iop Operation current CW,Po=5mW -20 60 mA
ηSlope efficiency CW,Po=5mW 0.15 0.25 -
V
Vop Operating voltage CW,Po=5mW 1.2 1.8
mW/mA
λpPeak wavelength CW,Po=5mW nm
Beam divergence angle (parallel) CW,Po=5mW 25 deg.
Beam divergence angle CW,Po=5mW
-0.2 -
θ
-
(perpendicular)
SMSR Side mode suppression ratio CW,Po=5mW
ImCW,Po=5mW
35
-
-35 45 deg.
30 40 -dB
Monitoring output current
tr,tf Rise and Fall time If=Ith,Po=5mW,10 - 90% -0.4
0.2 ns
<***>
IFD Forward current (Photo diode) -2mA
Symbol Paramete
Conditions Ratings Unit
Po Light output power CW 6mW
VRL Reverse voltage (Laser diode) -2V
VRD Reverse voltage (Photo diode) -20 V
Tc Case temperature -
Tstg Storage temperature --40to+100 ºC
ºC0to+85