DATA SH EET
Product specification
Supersedes data of 2002 Jan 17 2004 Feb 18
INTEGRATED CIRCUITS
TDA1517; TDA1517P
2 x 6 W stereo power amplifier
2004 Feb 18 2
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
FEATURES
Requires very few external components
High output powe r
Fixed gain
Good ripple rejection
Mute/st a ndby switch
AC and DC short-circuit safe to groun d an d VP
Thermally protected
Reverse polarity safe
Capability to handle high energy on outputs (VP=0V)
No switch-on/switch-off plop
Electrostatic discharge protection.
GENERAL DESCRIPTION
The TDA1517 is an integrated class-B dual output
amplifier in a pl astic single in-line medium pow er package
with fin (SIL9MPF), a plastic rectangular-bent single in-line
medium power package with fin (RBS9MPF) or a plastic
heat-dissipating dual in-line pa cka g e (H DIP1 8). The
device is primarily de velop ed for multi-media applications.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VPsupply voltage 6.0 14.4 18.0 V
IORM repetitive peak output current −−2.5 A
Iq(tot) total quiescent current 40 80 mA
Isb standby current 0.1 100 μA
Isw switch-on current −−40 μA
|ZI|input impedance 50 −−kΩ
Pooutput power RL=4Ω; THD = 0.5% 5W
RL=4Ω; THD = 10% 6W
SVRR supply voltage ripple rejection fi= 100 Hz to 10 kHz 48 −−dB
αcs channel separation 40 −−dB
Gvclosed loop voltage gain 19 20 21 dB
Vno(rms) noise outp ut voltage (RMS value) 50 −μV
Tccrystal temperature −−150 °C
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA1517/N3 SIL9MPF plastic single in-line medium power package with fin; 9 leads SOT110-1
TDA1517/N3/S5 RBS9MPF plastic rectangular-bent single in-line mediu m power package with
fin; 9 leads SOT352-1
TDA1517P HDIP18 plastic heat- d issipatin g du al in- line pack ag e; 18 leads SOT398-1
2004 Feb 18 3
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
mute/stand-by
switch input
MLC351
output 1
15 kΩ
15 kΩ
x 1
VA
stand-by
switch
VP
mute
switch
stand-by
reference
voltage
18 kΩ
18 kΩ
2
kΩ
60
kΩ
mute switch Cm
power stage
4
8
mute switch
VA
VA
Cm
2
kΩ
60
kΩ
power stage
6
275
SGND
signal
ground
PGND
output 2
non-inverting
input 1
non-inverting
input 2 9
supply voltage
ripple rejection
output
3
1
TDA1517
mute
reference
voltage
input
reference
voltage
VP
power
ground
(substrate)
2004 Feb 18 4
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
PINNING
SYMBOL PIN DESCRIPTION
INV1 1 non-inverting inp ut 1
SGND 2 signal ground
SVRR 3 supply voltage ripple rejection output
OUT1 4 output 1
PGND 5 power ground
OUT2 6 output 2
VP7 supply voltage
M/SS 8 mute/standby s wit ch input
INV2 9 non-inverting inp ut 2
Fig.2 Pin configuration for SOT110 -1 and
SOT352-1.
handbook, halfpage
MLC352
1
2
3
4
5
6
7
8
9
P
V
OUT2
SGND
INV1
INV2
TDA1517
OUT1
M/SS
SVRR
PGND
Fig.3 Pin configuration for SOT3 98-1.
Pins 10 to 18 should be connected to GND or floating.
handbook, halfpage
MLC353
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
P
V
OUT2
SGND
INV1
INV2
TDA1517P
OUT1
M/SS
SVRR
PGND
FUNCTIONAL DESCRIPTION
The TDA1517 contains two identical amplifiers with
differential input stages. The gain of each amplifier is fixed
at 20 dB. A special feature of the devi ce is the
mute/standby switc h w hic h has the following features:
Low standby current (<100 μA)
Low mute/stand by switching current
(low cost supply switch)
Mute condition.
2004 Feb 18 5
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VPsupply voltage operating 18 V
no signal 20 V
VP(sc) AC and DC short-circuit safe voltage 18 V
VP(r) reverse polarity 6V
ERGOenergy handling capability at outputs VP=0V 200 mJ
IOSM non-repetitive pea k ou tput current 4A
IORM repetitive peak output current 2.5 A
Ptot total power dissipation see Fig.4 15 W
Tstg storage temperature 55 +150 °C
Tamb operating ambient temperature 40 +85 °C
Tccrystal temperature 150 °C
SYMBOL TYPE NUMBER PARAMETER VALUE UNIT
Rth(j-c) TDA1517/N3; TDA1517/N3/S5 thermal resistance from junction to case 8 K/W
Rth(j-p) TDA1517P thermal resistance from junction to pins 15 K/W
Rth(j-a) TDA1517/N3; TDA1517/N3/S5;
TDA1517P thermal resistance from junction to
ambient 50 K/W
Fig.4 Power derating curve.
(1) Rth j-c =8K/W.
(2) Rth j-p =15K/W.
handbook, halfpage
25 0 50 150
12
0
MLC354
100
T ( C)
o
amb
P
(W)
18
6
(1)
(2)
2004 Feb 18 6
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
DC CHARACTERISTICS
VP=14.4V; T
amb =25°C; measured in Fig.6; unless otherwise specified.
Note
1. The circuit is DC adjusted at VP= 6 to 18 V and AC operating at VP= 8.5 to 18 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
VPsupply voltage note 1 6.0 14.4 18.0 V
Iq(tot) total quiescent current 40 80 mA
VODC output voltage 6.95 V
Mute/standby switch
V8switch-on voltage level see Fig.5 8.5 −−V
Mute condition
VOoutput signal in mute position VI(max) =1V; f
i=20Hzto15kHz −−2mV
Standby condition
Isb DC current in standby co ndition −−100 μA
Vsw switch-on current 12 40 μA
2004 Feb 18 7
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
AC CHARACTERISTICS
VP=14.4V; R
L=4 Ω; f = 1 kHz; Tamb =25°C; measured in Fig.6; unless otherwise specified.
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency re sponse externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and
a frequency betwee n 100 Hz and 10 kHz.
4. Noise voltage measu red in a bandwidth of 20 Hz to 20 kHz.
5. Noise output vo ltage independ ent of Rs (VI=0V).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pooutput power THD = 0.5%; note 1 4 5 W
THD = 10%; no te 1 5.5 6.0 W
THD total harmonic distortion Po=1W 0.1 %
flr low frequency roll-off at 3 dB; note 2 45 Hz
fhr high frequency roll-off at 1dB 20 −−kHz
Gvclosed loop voltage gain 19 20 21 dB
SVRR supply voltage ripple rejection note 3
on 48 −−dB
mute 48 −−dB
standby 80 −−dB
|Zi|input impedance 50 60 75 kΩ
Vno noise output voltage
on Rs=0Ω; note 4 50 −μV
on Rs=10Ω; note 4 70 100 μV
mute note 5 50 −μV
αcs channel separation Rs=10Ω40 −−dB
Gv|channel unbalance 0.1 1 dB
2004 Feb 18 8
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
Fig.5 Standby, mute and on co nditions.
handbook, halfpage
8.5
0
MLC355
V
18
6.4
3.3
2
11
(V)
;;;;;;;
;;;;;;;
;;;;;;;
;
;;;;;
;
;
;;;;;
;
;;;;;;;
;;;;;;;
;;;;;;;
ON (I = 40 mA)
P
mute (I = 40 mA)
P
standby (I 100 μA)
P
APPLICATION INFORMATION
Fig.6 Application circuit diagram.
handbook, full pagewidth
MLC356
100 nF
P
V
TDA1517
87
standby switch
220 nF
input 1
1000 μF 1000 μF
input
reference
voltage
2 5
signal
ground power
ground
1 9 220 nF input 2
46
3
2200
μF
internal
1/2 VP
100
μF
60 kΩ60 kΩ20 dB 20 dB
2004 Feb 18 9
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
PACKAGE OUTLINES
UNIT AA
max.
2A3b1D1
b2
bcD
(1) E(1) Z
max.
(1)
eLPP
1q1q2
q
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 18.5
17.8 3.7 8.7
8.0
A4
15.8
15.4 1.40
1.14 0.67
0.50 1.40
1.14 0.48
0.38 21.8
21.4 21.4
20.7 6.48
6.20 3.4
3.2
2.54 1
5.9
5.7
4.4
4.2
3.9
3.4 15.1
14.9
Q
1.75
1.55
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
2.75
2.50
SOT110-1 95-02-25
03-03-12
0 5 10 mm
scale
0.25
w
D
E
A
A
c
A2
3
A4
q1q2
L
Q
wM
b
b1
b2
D1
P
q
1
Ze
19
P
seating plane
pin 1 index
S
IL9MPF: plastic single in-line medium power package with fin; 9 leads SOT110
-1
2004 Feb 18 10
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
UNIT A A
max.
2max.
A3b1D1
b2
bcD
(2) E(2) Z(2)
(1) eLPP
1q1q2
q
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 14.45
13.95 8.7
8.0
3.7 1.40
1.14 0.67
0.50 1.40
1.14 0.48
0.38 21.8
21.4 21.4
20.7 6.48
6.20 3.4
3.2
2.54 1
5.9
5.7
4.4
4.2
3.8
3.3 15.1
14.9
Q
1.75
1.55
DIMENSIONS (mm are the original dimensions)
Notes
1. Dimension is specified at seating plane.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
2.75
2.50
SOT352-1 97-12-16
03-03-12
0 5 10 mm
scale
0.25
w
0.6
v
D
E
A
A
c
A2
3
q1q2
Q
D1
P
q
1
P
seating plane
pin 1 index
L
wM
vM
b
b1
b2
Ze
19
R
BS9MPF: plastic rectangular-bent single in-line medium power package with fin; 9 leads SOT352
-1
2004 Feb 18 11
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
UNIT A
max. 12 b1(1) (1) (1)
b2cD E e M Z
H
L
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
SOT398-1 95-01-25
03-02-13
A
min. A
max. bmax.
w
ME
e1
1.40
1.14 0.67
0.50 0.47
0.38 21.85
21.35 6.5
6.2 3.9
3.1 0.252.54 7.62 8.32
8.02 8.7
7.7 14.7 0.51 3.7
inches 0.06
0.04 0.03
0.02 0.02
0.01
1.05
0.75
0.04
0.03 0.87
0.84 0.26
0.24 0.15
0.12 0.010.1 0.3 0.33
0.32 0.34
0.30 0.040.19 0.02 0.15
MH
c
(e )
1
ME
wM
b1
b2
e
A
A1
A2
L
seating plane
Z
D
E
18
1
10
9
b
pin 1 index
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
H
DIP18: plastic heat-dissipating dual in-line package; 18 leads SOT398
-1
2004 Feb 18 12
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
SOLDERING
Introduction to soldering through-hole mount
packages
This text gives a brie f insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 6 52 90011).
Wave solder ing is the preferred method for mounting of
through-hole moun t IC packages on a prin ted-circuit
board.
Soldering by dipping or by solder wave
Driven by legislation and env ironmental forces the
worldwide use of lead-free solder pastes is increas ing.
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb- f ree respectively.
The total contact time of successive solder waves must not
exceed 5 seconds .
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necess ary immediately aft er soldering to ke ep the
temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temper ature of the solderin g iro n bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temp erature is between
300 and 400 °C, contact may be up to 5 seconds .
Suit ability of through-hole mount IC packages for dipping and wave soldering methods
Notes
1. For SDIP packages, the long itudinal axis must be parallel to the transport direction of the printed-circuit board.
2. For PMFP packages hot bar so ldering or manual soldering is suitable.
PACKAGE SOLDERING METHOD
DIPPING WAVE
CPGA, HCPGA suitable
DBS, DIP, HDIP, RDBS, SDIP, SIL suitable suitable(1)
PMFP(2) not suitable
2004 Feb 18 13
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or co mpleting a design.
2. The product s ta tus of device(s) described in this document may have chang ed since this document wa s published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Pr oduction This document contains the pr oduct specification.
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respect.
2004 Feb 18 14
NXP Semiconductors Product specification
2 x 6 W stereo power amplifier TDA1517; TDA1517P
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratin gs only and
(proper) operation of the device at these or any other
conditions abo ve those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the qua l ity and
reliability of the device.
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Semiconductors products are sold subje ct to the general
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http://www.nxp.com/profile/terms, unless otherwise
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Semiconductors hereby expressly objects to apply i ng the
customer’s general terms and conditions with regard to the
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, an d as such is
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In the event that customer uses the product for design-in
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Semiconductors’ product specifications.
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provides High Performance Mixed Signal and Standard Product
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Printed in The Netherlands R30/05/pp15 Date of release: 2004 Feb 18 Document order number: 9397 750 12926