Absolute Maximum Ratings
Parameter Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -6.5
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -4.1
IDM Pulsed Drain Current ➀-26
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁165 mJ
IAR Avalanche Current ➀-6.5 A
EAR Repetitive Avalanche Energy ➀2.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂-22 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s)
Weight 0.98 (typical) g
PD - 90882F
Pre-Irradiation
International Rectifier’s RAD-Hard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized f or both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
oC
A
2/18/03
www.irf.com 1
TO-39
Product Summary
Part Number Radiation Level RDS(on) IDQPL Part Number
IRHF9130 100K Rads (Si) 0.30Ω-6.5A JANSR2N7389
IRHF93130 300K Rads (Si) 0.30Ω-6.5A JANSF2N7389
Features:
nSingle Event Effect (SEE) Hardened
nLow RDS(on)
nLow T otal Gate Charge
nProton T olerant
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nCeramic Package
nLight Weight
For footnotes refer to the last page
IRHF9130
JANSR2N7389
RADIATION HARDENED 100V, P-CHANNEL
POWER MOSFET REF: MIL-PRF-19500/630
THRU-HOLE (TO-39)
RAD-Hard
™
HEXFET
®
TECHNOLOGY
IRHF9130 Pre-Irradiation
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown V oltage -100 — — V VGS = 0V, ID =-1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.112 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.30 VGS = -12V, I D = -4.1A➃
Resistance — — 0.35 Ω VGS = -12V, ID = -6.5A➃
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, I D = -1.0mA
gfs Forward Transconductance 2.5 — — S ( ) V
DS >-15V, IDS = -4.1A ➃
IDSS Zero Gate Voltage Drain Current — — -25 VDS= -80V ,VGS=0V
— — -250 VDS = -80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 45 VGS =-12V, ID = -6.5A
Qgs Gate-to-Source Charge — — 10 nC VDS = -50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 25
td(on) Turn-On Delay Time — — 30 VDD = -50V, ID = -6.5A,
trRise Time — — 50 VGS =-12V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 70
tfFall Time — — 70
LS + LDTotal Inductance — 7.0 —
Ciss Input Capacitance — 1200 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 290 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 76 —
nA
Ω
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 5.0
RthJA Junction-to-Ambient — — 175 Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -6.5
ISM Pulse Source Current (Body Diode) ➀— — -26
VSD Diode Forward Voltage — — -3.0 V Tj = 25°C, IS = -6.5A, VGS = 0V ➃
trr Reverse Recovery Time — — 250 nS Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 0.74 µC VDD ≤ -50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tur n-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
°C/W
www.irf.com 3
Pre-Irradiation IRHF9130
T able 1. Electrical Characteristics @ Tj = 25°C, P ost Total Dose Irradiation ➄➅
Parameter 100K Rads(Si)1 300K Rads (Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage -100 — -100 — V VGS = 0V, ID = -1.0mA
VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA
IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS = -20V
IGSS Gate-to-Source Leakage Reverse — 100 — 100 V GS = 20 V
IDSS Zero Gate Voltage Drain Current — -25 — -25 µA VDS=-80V, VGS =0V
RDS(on) Static Drain-to-Source ➃ — 0.30 — 0.30 Ω VGS = -12V, ID =-4.1A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source ➃ — 0.30 — 0.30 Ω VGS = -12V, ID =-4.1A
On-State Resistance (TO-39)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHF9130 (JANSR2N7389)
2. Part number IRHF93130 (JANSF2N7389)
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects character ization is illustrated in Fig. a and Table 2.
T able 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
VSD Diode Forward Voltage ➃ — -3.0 — -3.0 V VGS = 0V, IS = -6.5A
-120
-100
-80
-60
-40
-20
00 5 10 15 20
VGS
VDS
Cu
Br
I
noI TEL ))²mc/gm(/VeM ygrenE )VeM( egnaR )mµ( )V(SDV
V0=SGV@V5=SGV@V01=SGV@V51=SGV@V02=SGV@
uC8258234001-001-001-07-06-
rB8.6350393001-001-07-05-04-
I9.955438.2306- ————
IRHF9130 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
1
10
100
1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
1
10
100
5678910
V = -50V
20
µ
s PULSE WIDTH
DS
-V , Gate-to-Source Volta
g
e (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-12V
-6.5A
www.irf.com 5
Pre-Irradiation IRHF9130
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
500
1000
1500
2000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
010 20 30 40 50 60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-6.5
V =-20V
DS
V =-50V
DS
V =-80V
DS
0.1
1
10
100
0.2 1.0 1.8 2.6 3.4 4.2
-V ,Source-to-Drain Volta
g
e (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS
(
on
)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Volta
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRHF9130 Pre-Irradiation
6www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
VGS
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
www.irf.com 7
Pre-Irradiation IRHF9130
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(
BR
)
DSS
I
AS
R
G
IAS
0.01
Ω
t
p
D.U.T
L
V
DS
VDD
DRIVER A
15V
-20V
Fig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
-12V
Fig 13b. Gate Charge Test Circuit
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-12V
VGS
25 50 75 100 125 150
0
100
200
300
400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-2.9A
-4.1A
-6.5A
IRHF9130 Pre-Irradiation
8www.irf.com
Foot Notes:
Case Outline and Dimensions — TO-205AF(Modified TO-39)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
➀Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁VDD = -25V, starting TJ = 25°C, L=7.8mH
Peak IL = -6.5A, VGS =-12V
➂ISD ≤ -6.5A, di/dt ≤ -430A/µs,
VDD ≤ -100V, TJ ≤ 150°C
➃Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
LEGEND
1- SOURCE
2- GATE
3- DRAIN