SIEMENS BCR 148 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (Ry=47kQ, Ro=47kQ) ouarias YPSO5161 Type Marking |Ordering Code =| Pin Configuration Package BCR 148 WEs Q62702-C2261 1=B |2 =E |3 =C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VcEO 50 Vv Collector-base voltage Vcspo 50 Emitter-base voltage VeBO 10 Input on Voltage Vicon) 50 DC collector current Io 70 mA Total power dissipation, Ts = 102C Prot 200 mw Junction temperature Tj 150 C Storage temperature Tstg - 65... + 150 Thermat Resistance Junction ambient 1 Fins < 350 K/AW Junction - soldering point FAinus < 240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm? Cu Semiconductor Group 663 11.96SIEMENS BCR 148 Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. ityp. |max. DC Characteristics Collector-emitter breakdown voltage VipryceO Vv Ig = 100 pA, ig =0 50 - - Collector-base breakdown voltage ViprycBo Io = 10 pA, ip = 0 50 - - Collector cutoff current IcBo nA Vop = 40 V, fe =0 - - 100 Emitter cutoff current fEBo pA Vep = 10V, Ip = 0 - - 164 DC current gain hee - fo=5 mA, Vop =5V 70 - - Collector-emitter saturation voltage 1) | Vcesat Vv Io = 10 mA, fg = 0.5 MA - - 0.3 input off voltage Vioth Ig = 100 pA, Vog =5V 0.8 - 15 Input on Voltage Vion) Ig =2 MA, Vog =0.3V 1 - 3 Input resistor Ay 32 47 62 kQ Resistor ratio Fy/Ro 0.9 4 1.4 - AC Characteristics Transition frequency fr MHz Ip = 10 MA, Voge = 5 V, f= 100 MHz - 100 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 3 : 1) Pulse test: t < 300us; D < 2% Semiconductor Group 664 11.96SIEMENS BCR 148 DC Current Gain hee = f (Ic) Coliector-Emitter Saturation Voltage Vee = 5V (common emitter configuration) Voesat = Alc), hee = 20 103 102 Mee 10! 101 19 OL. 40 10 10 10 10 mA 0,0 0.2 0.4 0.6 v 1.0 w Ir <_ > Voges Input on Voltage Vion) = fic) Input off voltage Vico#) = Alc) Vor = 0.3V (common emitter configuration) Voge = 5V (common emitter configuration) 102 o bo 40-1 Vion Semiconductor Group 665 11.96SIEMENS BCR 148 Total power dissipation Pi. = f(T"; Ts) * Package mounted on epoxy 300 mw t ae 100 ow \ 50 0 | \ 0 20 40 60 80 100 120 C 150 e Ty Ts Permissible Pulse Load Anis = Kf) 10! Semiconductor Group HHH TT TT TT Ta CT ti eu 0 UU i 666 Permissible Pulse Load Piotmax / Ptotoc = Kb) tu WT Ct ni nH {HC aera T Coes r o n a {iii Soo9058 an = 2828 eee po =n 10 * Label = y ron cS rN | tt CTH lll Mi mn 10% 10 s 10 |, 4 11.96