HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999. 08.01
Page No. : 1/3
HSMC Product Specifi cation
H2N6388
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6388 is designed for general-purpose amplifier and
switching applica tions.
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperatur e................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 65 W
Total Power Dissipation (Ta=25°C)...................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... 80 V
BVCEO Collector to Emitter Voltage................................................................................... 80 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current............................................................................................................ 10 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 80 - - V IC=1mA, IE= 0
*BVCEO 80 - - V IC=200mA, IB=0
ICBO - - 100 uA VCB=160V, IE=0
IEBO - - 5 mA VEB=5V, IC=0
ICEO - - 1 mA VCE=80V, IB=0
ICEV - - 300 uA VCE=80V, VBE(off)=1.5V
*VCE(sat)1 - - 2 V IC=5A, IB=10mA
*VCE(sat)2 - - 3 V IC=10A, IB=100mA
*VCE(sat)3 - 1.5 - V IC=5A, IB=2.5mA
*VBE(sat) - 2 - V IC=5A, IB=5mA
VBE(on)1 - - 2.8 V IC=5A, VCE=3V
VBE(on)2 - - 4.5 V IC=10A, VCE=3V
*hFE1 1 - 20 K IC=5A, VCE=3V
*hFE2 100 - - IC=10A, VCE=3V
VFEC - 3 - V IC=5A
Cob - - 200 pF VCB=10V, IE=0
*Pulse Test : Pulse Width 380us, Duty Cycle2%
Classification of
Rank hFE1 VCE(sat)1 VCE(sat)3 VBE(sat) VFEC
KC 2-20K <1.3V <1.5V <2.0V <3.0V
Normal 1-20K <2.0V - - -
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999. 08.01
Page No. : 2/3
HSMC Product Specifi cation
Characteristics Curve
Current Gain & Col lect or Current
1
10
100
1000
10000
1 10 100 1000 10000
Coll ec tor Cur r e nt (mA )
hFE
hFE @ VCE=3V
Saturation Voltage & Collector Current
100
1000
10000
100 1000 10000
Collector Curren t (mA)
Satu ration Voltage (mV)
VBE(sat) @ IC=100IB
VCE(sat) @ IC=100IB
On Vol tage & Col l ect or Cu rrent
100
1000
10000
10 100 1000 10000
Coll ec tor Cur r e nt (mA )
On Voltage (mV)
VBE(on) @ VCE=3V
Sw itching Time & Collector Current
0.1
1
10
110
Collector Curren t (A)
Switchin g T imes ( us)
Tstg
VCC=30V, IC=250IB1=-250IB2
Tf
Ton
Capacit an ce & R everse-Biased Vol tage
10
100
1000
0.1 1 10 100
R everse - Biased Vol t ag e ( V)
Cap a c tia nce (pF)
Cob
Safe Op e rating A rea
1
10
100
1000
10000
100000
1 10 100
Forward Vol tage-VCE (V)
Collector Curren t-IC (m A)
PT=1ms
PT=100ms
PT=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999. 08.01
Page No. : 3/3
HSMC Product Specifi cation
TO-220AB Dimension
*:Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-
*0.6398 - *16.25
Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimens ion : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing m ethod, please contact your l ocal HSMC sal es office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin famil y, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its produc ts without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerit y Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Tai wan R.O. C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
A B
E
G
IK
M
O
P
3
2
1
C
N
H
D
4
Style : Pin 1.Base 2.Co llec tor 3. Emitter
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank