VSLY5940
www.vishay.com Vishay Semiconductors
Rev. 1.2, 29-May-15 1Document Number: 84240
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 940 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSLY5940 is an
infrared, 940 nm emitting diode based on GaAlAs surface
emitter chip technology with extreme high radiant intensity,
high optical power and high speed, molded in a clear,
untinted plastic package, with a parabolic lens.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Narrow angle of half intensity: = ± 3°
• Suitable for high pulse current operation
• Good spectral matching with CMOS cameras
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
• Smoke-automatic fire detectors
•IR Flash
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
22114
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns)
VSLY5940 600 ± 3 940 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSLY5940 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
VSLY5940-CS21 Reel MOQ: 5000 pcs, 1000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV190 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature t 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W
VSLY5940
www.vishay.com Vishay Semiconductors
Rev. 1.2, 29-May-15 2Document Number: 84240
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
22116 T
amb
- Ambient Temperature (°C)
PV - Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
22115
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.65 1.9 V
IF = 1 A, tp = 100 μs VF2.9 V
Temperature coefficient of VF
IF = 1 mA TKVF -1.45 mV/K
IF = 10 mA TKVF -1.25 mV/K
Reverse current IRnot designed for reverse operation μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj125 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie300 600 900 mW/sr
IF = 1 A, tp = 100 μs Ie5100 mW/sr
Radiant power IF = 100 mA, tp = 20 ms e55 mW
Temperature coefficient of eIF = 100 mA TKe-0.35 %/K
Angle of half intensity ± 3 deg
Peak wavelength IF = 100 mA p920 940 960 nm
Spectral bandwidth IF = 100 mA 35 nm
Temperature coefficient of pIF = 100 mA TKp0.25 nm/K
Rise time IF = 100 mA tr10 ns
Fall time IF = 100 mA tf10 ns
VSLY5940
www.vishay.com Vishay Semiconductors
Rev. 1.2, 29-May-15 3Document Number: 84240
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
tp - Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
IF - Forward Current (mA)
V
F
- Forward Voltage (V)
22097
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3 3.5
t
p
= 100 µs
1
10
100
1000
10 000
0.001 0.01 0.1 1
22117 IF - Forward Current (A)
Ie - Radiant Intensity (mW/sr)
tP = 100 µs
0.1
1
10
100
1000
11 0 100 1000
16971
I
F
- Forward Current (mA)
- Radiant Power (mW)
e
λ - Wavelength (nm)
Ie, rel - Relative Radiant Intensity (%)
0
60
80
100
800 850 900 950 1000 1050
I
F
= 20 mA
70
90
50
20
40
30
10
22132
0.6 00.20.4
0.9
0.8
0° 30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I
e rel
- Relative Radiant Intensity
ϕ - Angular Displacement
VSLY5940
www.vishay.com Vishay Semiconductors
Rev. 1.2, 29-May-15 4Document Number: 84240
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
specications
according to DIN
technical drawings
Not indicated tolerances ± 0.1
Drawing-No.: 6.544-5385.01-4
Issue: 2; 08.03.10
20531
CA
5.75 ± 0.15
35.85 ± 0.5
12.88 ± 0.3
5.4 ± 0.3 Chip position
7.6 ± 0.15
8.6 ± 0.3
1.5 ± 0.25
0.75 - 0.12
0.63
2.54 nom.
Ø 5 ± 0.15
< 0.7
0.5
Aera not plane
Parabolic lens
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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