Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy (2 keV or more) electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron microscope (SEM) High gain: 1100 times (incident electron energy: 5 keV) Large active area size S11141: 10 x 10 mm S11142: 14 x 14 mm 2.0 mm hole in center of active area Design is suitable for use with backscattered electron detector of SEM. S11142: 4-element photodiode Detects reflection electron beam position (angle) Thin ceramic package Allows short-distance arrangement between the electron gun and a sample in a SEM Uses a wiring board made of less magnetic materials that are unlikely to affect electron beam trajectories. Absolute maximum ratings Parameter Reverse voltage Operating temperature*1 Storage temperature*1 Symbol VR max. Topr Tstg Condition Value 20 -20 to +60 -20 to +80 Ta=25 C Unit V C C *1: No condensation Electrical and optical characteristics (Ta=25 C) Parameter Incident electron energy range Symbol - Output current Isc Dark current ID Terminal capacitance Ct Cut-off frequency fc Electron multiplying gain Condition - Electron energy 5 keV Ip=1 nA*3 VR=10 mV VR=5 V VR=0 V, f=10 kHz VR=5 V, f=1 MHz VR=0 V, RL=50 =400 nm, -3 dB VR=5 V, RL=50 =400 nm, -3 dB Electron energy 5 keV Min. 2 S11141 Typ. Max. 30 - 1.1 - 0.1 1 5 50 2000 3300 500 850 Min. 2 S11142*2 Typ. Max. 30 - 1.1 - - 0.05 1 900 250 0.5 25 1500 420 - 0.5 - - 1 - - 4 - - 7 - - 1100 - - 1100 - Unit keV A nA pF MHz - *2: Per 1 element *3: Injection current (probe current) www.hamamatsu.com 1 Si photodiode S11141, S11142 Gain vs. electron energy (Typ. Ta=25 C, Ip=1 nA) Gain 10000 1000 100 0 5 10 15 25 20 30 Electron energy (keV) KSPDB0299EA Electron multiplication principle Output current Silicon Si photodiode Vacuum Electron Dead layer Detail Generation of electron-hole pairs (electron multiplication) Electrons generate ions as they pass through silicon. This ionization process generates a large number of electron-hole pairs that then multiply the number of electrons. The electron multiplication can boost the output current by approximately 1100 times at an input electron energy of 5 keV (refer to "Gain vs. electron energy"). KSPDB0299EA 2 Si photodiode S11141, S11142 Dark current vs. reverse voltage (typical example) Terminal capacitance vs. reverse voltage 1 A (Typ. Ta=25 C) 1 F (Ta=25 C) 100 nF S11141 1 nA S11142 100 pA 10 nF S11141 1 nF 100 pF S11142 10 pF 10 pA 1 pF 1 pA 100 fA 0.1 100 fF 0.1 1 10 1 10 100 100 Reverse voltage (V) Reverse voltage (V) KSPDB0303EA KSPDB0302EA Dimensional outlines (unit: mm, tolerance unless otherwise noted: 0.2) S11141 25.0 10.0 5.08 Light shield Al 10.0 5.5 0.2 Wire protection resin Active area 0.5 0.1 (0.25) 2.0 Chip hole 1.0 max. +0.2 2.3 (2 x) 3.0 (2 x) 0.2 (2 x) 1.5 (0.5) 11.0-0 Ceramic Dark current 10 nA Terminal capacitance 100 nA 7.0 Ceramic hole KSPDA0187EA 3 Si photodiode S11141, S11142 S11142 35.0 7.5 0.2 2.3 1.8 0.3 P2.54 x 4 = 10.16 Anode common 0.15 Wire protection resin Active area 1.0 max. 14.0 0.5 0.1 (0.25) 2.0 Chip hole 2.54 (4 x) 6.925 0.15 14.0 15.0-0 Ceramic +0.2 1.2 Light shield Al 7.0 Ceramic hole KSPDA0188EA Recommend soldering conditions * Soldering temperature: below 260 C * Soldering time: within 5 seconds Information described in this material is current as of July, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1080E01 Jul. 2011 DN 4