Copyright 2002 Semicoa Semiconductors, Inc.
Rev. H 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N2920
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2920J)
• JANTX level (2N2920JX)
• JANTXV level (2N2920JV)
• JANS level (2N2920JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Matched Dual transistors
• NPN silicon transistor
Features
• Hermetically sealed TO-78 metal can
• Also available in chip configuration
• Chip geometry 0307
• Reference document:
MIL-PRF-19500/355
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 60
Volts
Collector-Base Voltage VCBO 70
Volts
Emitter-Base Voltage VEBO 5
Volts
Collector Current, Continuous IC 50
mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C
PT
300 one section
600 both sections
1.71one section
3.43 both sections
mW
mW/°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C
PT
750 one section
1.5 both sections
4.286 one section
7.14 both sections
MW
W
mW/°C
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. H 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N2920
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 10 mA 60 Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 70 Volts
VCB = 45 Volts
VCB = 45 Volts, TA = 150°C
10
2
2.5
µA
nA
µA
Collector-Emitter Cutoff Current ICEO V
CE = 5 Volts 2 nA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 6 Volts
VEB = 5 Volts
10
2
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE2-1/hFE2-2
IC = 10 µA, VCE = 5 Volts
IC = 100 µA, VCE = 5 Volts
IC = 1 mA, VCE = 5 Volts
IC = 10 µA, VCE = 5 Volts
TA = -55°C
IC = 100 µA, VCE = 5 Volts
175
235
300
50
0.9
600
800
1,000
1.0
Base-Emitter Voltage differential
|VBE1-VBE2|1
|VBE1-VBE2|2
|VBE1-VBE2|3
VCE = 5 Volts, IC = 10 µA
VCE = 5 Volts, IC = 100 µA
VCE = 5 Volts, IC = 1 mA
5
3
5
mVolts
Base-Emitter Voltage differential
at temperature
|VBE1-VBE2|1
|VBE1-VBE2|2
VCE = 5 Volts, IC = 100 µA
TA = 25 °C and -55°C
TA = 25 °C and +125°C
0.8
1
mVolts
Base-Emitter Saturation Voltage VBEsat1 IC = 1 mA, IB = 100 µA 0.5 1.0 Volts
Collector-Emitter Saturation
Voltage VCEsat1 IC = 1 mA, IB = 100 µA 0.3 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE1| VCE = 5 Volts, IC = 500 µA,
f = 20 MHz 3 20
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 10 Volts, IC = 1 mA,
f = 1 kHz 150 600
Open Circuit Output Capacitance COBO VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 5 pF
Noise Figure
NF1
NF2
NF3
VCE = 5 Volts, IC = 10 µA,
Rg = 10 kΩ
f = 100 Hz
f = 1 kHz
f = 10 kHz
5
3
3
dB
Short Circuit Input Impedance hie VCB =5V, IC =1mA, f =1kHz 3 30 kΩ
Open Circuit Output Admittance hoe VCB =5V, IC =1mA, f =1kHz 60 µmhos
Open Circuit reverse Voltage Transfer
Ratio
hre VCB =5V, IC=100µA, f=1kHz 1x10-3