TOSHIBA TPS601A TOSHIBA PHOTO TRANSISTOR = SILICON NPN EPITAXIAL PLANAR TPS601A PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER 5.8MAX POSITION DETECTION +01 4.7-0.1 VARIOUS KINDS OF READERS 540.2 e TO-18 metal package High sensitivity. 2-S0A501 Sharp directivity. Incident light can be effectively used. : 64=110(TYP.) The same size TPS604 with the base pin is available. MAXIMUM RATINGS (Ta =25C) CHARACTERISTIC SYMBOL | RATING | UNIT ||JEDEC = Collector-Emitter Voltage VCEO 40 vy EY Emitter-Collector Voltage VECO 5 Vv TOSHBS O-5AL Collector Current Ic 50 mA Weight : 0.39g (T'YP.) Collector Power Dissipation Po 150 mw [PIN CONNECTION * * * 2 Collector Power Dissipation APG /C 12 mW /C 1. EMITTER Derating (Ta>25C) 1 2. COLLECTOR Operating Temperature Range Topr 40~125 C Storage Temperature Range Tstg 55~150 C 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-09-08 1/5TOSHIBA TPS601A OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Dark Current Ip Icko) | VckE =380V, E=0 0.01 0.2 | uA TPS601A 100 _ VCE =3V ; _ Light Current i, | E=0.1mw/eme [|PS6OLAA | 100 300 | A (Note) |TPS601A-B | 200 | | 600 TPS601A-C 400 1200 Collector-Emitter Saturation Ic =30uA, E=0.1mW/cm2 Vv , | 0.25 04] V Voltage CE (sat) (Note) Switching Ti Rise Time tr Vcc=5V, Ic=10mA 2; bs witching Time _ 6 Fall Time| te Ry=1000 = 2| Peak Sensitivity Wavelength Ap 800 | nm Half Value Angle 4 | +410} Note : Color temperature =2870K, Standard Tungsten Lamp. PRECAUTION Please be careful of the followings. 1. Soldering temperature : 260C MAX. Soldering time : 5s MAX. (Soldering portion of lead : above 1.5mm from the body of the device.) 2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device. Solderign shall be performed after lead forming. PRODUCT INDICATION MODEL NAME MONTHLY PRODUCTION LOT MeriS601A! th titi re { PRODUCTION MONTH I I (JAN-DEC ARE INDICATED BY ALPHABETES OF A-L) PRODUCTION YEAR (LAST DIGIT OF A.D. IS INDICATED) STAMP COLOR : RED 1997-09-08 2/5TOSHIBA Fig.1 SWITCHING TIME TEST CIRCUIT INPUT Vv ae cc TLNI01A (GaAs LED) OUTPUT R RL Pc - Ta ALLOWABLE COLLECTOR POWER DISSIPATION Pc (mW) 0 40 60 120 160 200 AMBIENT TEMPERATURE Ta (C) IL E (TYP.) URRENT I,, (mA) 7 2 LIGHT Vor =3V Ta=25C COLOR TEMPERATURE = 2870K 0.1 0.3 1 3 10 30 RADIANT INCIDENCE E (mW/cm?) INPUT PULSE TPS601A ~- forsee 90% OUTPUT PULSE / 9 A tenn +-ho--= 10% tr tf Ip Ta (TYP.) DARK CURRENT Ip (A) RELATIVE SENSITIVETY (9%) | 0 40 80 120 160 AMBIENT TEMPERATURE Ta (C) SPECTRAL RESPONCE (TYP.) 200 Ta=25C 100 50 30 10 400 600 800 1000 1200 WAVELENGTH A (nm) 1997-09-08 3/5TOSHIBA DIRECTIONAL SENSITIVITY CHARACTERISTIC (TYP.) (Ta= 25C) RADIATION ANGLE 1.0 08 06 04 02 9 RELATIVE SENSITIVETY SWITCHING CHARACTERISTICS (TYP.) Ta=25C INPUT purse. L INPUT oe weg OUTPUT . 90% TLN108 PULSE 10% (GaAs LED) OUTPUT ta R $Ry oHe oH tr tf & 200 5 tr RL =10kQ) U By PL te OL at = 100 st iE o 59 te(Ry = 10kM) = oS 3 30 NON E SS Pah a tr (RL =1kQ) = NIK Nos = | a INS SS = 10 SSS \ te(Ry=1kQ) 5} tq RL=10kQ) | i gf fa R= 10002, 1k) ay It | tp (RL = 100) mF te tp RL =1000) tN] 1 boii Lo 0.02 0.1 0.38 1 3 10 COLLECTOR CURRENT Ig (mA) RELATIVE INPUT (dB) COLLECTOR CURRENT Ic (mA) TPS601A FREQUENCY CHARACTERISTICS Voc=5v Ta=25C LIGHT SOURCE =TLN108 (GaAs LED) 1 3 10 30 100 300 1000 FREQUENCY f (kHz) COUPLING CHARACTERISTICS WITH Voc=5V ws Voc Rp=1k0 R RL Ta=25C LIGHT SOURCE=TLNIO1A 4) CE (GaAs LED) i d 20 500mA (PULSE) 10 PULSE WIDTH = 100 us REPRETITIVE FREQUENCY =100Hz 5 3 1 0.5 03 80mA (DC) 40mA (DC) 20mA (DC) 0.1 10mA (DC) Ip=5mA (DC) 0.05 0.03 0.01 1 3 10 30 100 300 1000 COUPLING DISTANCE d (mm) 1997-09-08 4/5TOSHIBA TPS601A RELATIVE LIGHT CURRENT COLLECTOR CURRENT Ic (mA) 0 40 0.5 RELATIVE Iy, Ta (TYP.) E=0.1mW/cm? VcE=3V COUPLING CHARACTERISTICS WITH TLN108 AMBIENT TEMPERATURE Ta (C) Ta=25C Ip =42mW/sr TPS601A -- Ip,=226 uA 1 at Vcp=3V E=0.1lmW/em? Dc A] 3. O45 10 30 50 DISTANCE d (mm) 20 0 20 40 60 80 100 100 200 Ic (mA) COLLECTOR CURRENT COUPLING CHARACTERISTICS WITH 1 Ta=25C Ip=25.5mW /sr TPS601A USING SAMPLE 1, =226 4A at Vcgp=3V E=0.1mW/cm? la 3 5 10 30 50 100 300500 1000 DISTANCE d (mm) 1997-09-08 5/5