VISHAY
ZMY1 to ZMY100
Document Number 85788
Rev. 2, 10-Sep-03
Vishay Semiconductors
www.vishay.com
1
18315
Zener Diodes
Features
• Silicon Planar Power Zener Diodes.
• For use in stablilizing and clipping circuits with
high power rating.
• The Zener voltages are graded according to the
international E 24 standard. Smaller voltage toler-
ances are available upon request.
• These diodes are also available in the DO-41 case
with the type designation ZPY1 ... ZPY100.
Mechanical Data
Case: MELF Glass Case
Weight: approx. 250 mg
Packaging Codes/Options:
E4 / 5k per 13 " reel (12 mm tape), 10k/box
25 / 1.5k per 7 " reel (12 mm tape), 12k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Parameter Test condition Symbol Value Unit
Zener current (see Table
"Characteristics")
Power dissipation Ptot 1.0 1) W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient (max.)
RθJA 170 1) °C/W
Thermal resistance junction to
case (typ.)
RθJC 60 °C/W
Junction temperature Tj175 °C
Storage temperature TS- 55 to + 175 °C
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Document Number 85788
Rev. 2, 10-Sep-03
VISHAY
ZMY1 to ZMY100
Vishay Semiconductors
Electrical Characteristics
1) Valid provided that electrodes are kept at ambient temperature
2) Tested with pulses tp = 5 ms
The ZMY1 is a silicon diode operated in forward direction.Hence, the index of all characteristics and maximum ratings should be "F"instead
of "Z". Connect the cathode terminal to the negative pole. For devices in glass case MELF with higher Zener voltage but same power dis-
sipation see types ZMU100 ... ZMU180
Partnumber Zener Voltage (2) Dynamic Resistance Temperature Coefficient
of Zener Voltage
Test
Current
Reverse
Voltage
Admissible
Zener
Current (1)
VZ @ IZT rzj @ IZT
, f = 1 kHz αVZ @ IZT IZT VR @
IR = 0.5 µA
IZ @
Tamb=25°C
VΩ10-4/°C mA VmA
min max typ min max
ZMY1 0.65 0.75 86.5 -26 -23 5 - 406
ZMY3.9 3.7 4.1 7 4 -7 2100 -203
ZMY4.3 44.6 7 4 -7 3100 -182
ZMY4.7 4.4 574-7 4100 -165
ZMY5.1 4.8 5.4 5 2 -6 5100 0.7 150
ZMY5.6 5.2 621-3 5100 1.5 135
ZMY6.2 5.8 6.6 2 1 -1 6100 2128
ZMY6.8 6.4 7.2 2 1 0 7 100 3110
ZMY7.5 77.9 2 1 0 7 100 5100
ZMY8.2 7.7 8.7 2 1 3 8 100 689
ZMY9.1 8.5 9.6 4 2 3 8 50 782
ZMY10 9.4 10.6 4 2 5 9 50 7.5 74
ZMY11 10.4 11.6 7 3 5 10 50 8.5 66
ZMY12 11.4 12.7 7 3 5 10 50 960
ZMY13 12.4 14.1 9 4 5 10 50 10 55
ZMY15 13.8 15.8 9 4 5 10 50 11 49
ZMY16 15.3 17.1 10 5 7 11 25 12 44
ZMY18 16.8 19.1 11 5 7 11 25 14 40
ZMY20 18.8 21.2 12 6 7 11 25 15 36
ZMY22 20.8 23.3 13 7 7 11 25 17 34
ZMY24 22.8 25.6 14 8 7 12 25 18 29
ZMY27 25.1 28.9 15 9 7 12 25 20 27
ZMY30 28 32 20 10 712 25 22.5 25
ZMY33 31 35 20 11 712 25 25 22
ZMY36 34 38 60 25 712 10 27 20
ZMY39 37 41 60 30 812 10 29 18
ZMY43 40 46 80 35 813 10 32 17
ZMY47 44 50 80 40 813 10 35 15
ZMY51 48 54 100 45 813 10 38 14
ZMY56 52 60 100 50 813 10 42 13
ZMY62 58 66 130 60 813 10 47 11
ZMY68 64 72 130 65 813 10 51 10
ZMY75 70 79 160 70 813 10 56 9
ZMY82 77 88 160 80 813 10 61 8
ZMY91 85 96 250 120 913 568 7.5
ZMY100 94 106 250 130 913 575 7
VISHAY
ZMY1 to ZMY100
Document Number 85788
Rev. 2, 10-Sep-03
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Dynamic Resistance vs. Zener Current
Figure 2. Dynamic Resistance vs. Zener Current
Figure 3. Dynamic Resistance vs. Zener Current
18312
18313
18314
ZMY100
ZMY82
ZMY68
ZMY56
ZMY43
Figure 4. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Pulse Thermal Resistance vs. Pulse Duration
18289
18286
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Document Number 85788
Rev. 2, 10-Sep-03
VISHAY
ZMY1 to ZMY100
Vishay Semiconductors
18309
Figure 6. Breakdown Characteristics
18310
Figure 7. Breakdown Characteristics
VISHAY
ZMY1 to ZMY100
Document Number 85788
Rev. 2, 10-Sep-03
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in Inches (mm)
18311
Figure 8. Breakdown Characteristics
0.022 (0.55)
0.205 (5.2)
0.189 (4.8)
0.102 (2.6)
0.094 (2.4)
Cathode Mark
18317
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Document Number 85788
Rev. 2, 10-Sep-03
VISHAY
ZMY1 to ZMY100
Vishay Semiconductors
Mounting Pad Layout
0.157 (4.00)
0.118 (3.00)
MIN
MAX
0.256 (6.50)
REF
0.049 (1.25)
MIN
18316
VISHAY
ZMY1 to ZMY100
Document Number 85788
Rev. 2, 10-Sep-03
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
