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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBT2222AE TRANSISTOR
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
Complementary PNP Type available (MMBT2907AE)
PPLICATION
general purpose amplifier, switching.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1P
C
1P
B E
MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 600 mA
PC Collector Dissipation 150 mW
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55to+150 ℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 10μA,IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO I
C= 10mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6 V
Collector cut-off current ICBO V
CB=70 V,IE=0 0.1
μA
Collector cut-off current ICEX V
CE=60V,VBE(off)=3V 0.1
μA
Emitter cut-off current IEBO V
EB= 3V,IC=0 0.1
μA
hFE(1) V
CE=10V,IC= 0.1mA 35
hFE(2) V
CE=10V,IC= 1mA 50
hFE(3) V
CE=10V,IC= 10mA 75
hFE(4) V
CE=10V,IC= 150mA 100 400
DC current gain
hFE(5) V
CE=10V,IC= 500mA 40
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB= 50mA
I
=150mA
I
=15mA
1
0.3 V
Base-emitter saturation voltage VBE(sat) IC=500mA,IB= 50mA
IC=150mA,IB=15mA
2
1.2 V
Transition frequency fT VCE=20V, IC= 20mA
f=100MHz 300 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 8 pF
Noise figure NF VCB=10V,Ic=0.1mA,
f=1KHz,Rs=1KΩ 4 dB
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR