A
P18N20GH/J-HF
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 200V
▼ Low On-resistance RDS(ON) 170mΩ
▼ Fast Switching Characteristics ID18A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
W/℃
PD@TA=25℃Total Power Dissipation3W
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data & specifications subject to change without notice
2
Halogen-Free Product
Parameter
Parameter
89
-55 to 150
± 20
18
9.5
Rating
200
60
Linear Derating Factor 0.7
201006224
1
Storage Temperature Range -55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
GDSTO-251(J)
GDSTO-252(H)
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18N20GJ)
are available for low-profile applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 200 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.25 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=8A - - 170 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=10A - 9.5 - S
IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS= + 20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=10A - 19 30 nC
Qgs Gate-Source Charge VDS=160V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 6 - nC
td(on) Turn-on Delay Time2VDD=100V - 9 - ns
trRise Time ID=11A - 21 - ns
td(off) Turn-off Delay Time RG=9.1Ω,VGS=10V - 25 - ns
tfFall Time RD=9.1Ω-19-ns
Ciss Input Capacitance VGS=0V - 1065 1700 pF
Coss Output Capacitance VDS=25V - 185 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 3 - pF
RgGate Resistance f=1.0MHz - 1.6 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=10A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=10A, VGS=0V, - 180 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 1150 - nC
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3.Surface mounted on 1 in2 copper pad of FR4 board
2
AP18N20GH/J-HF
AP18N20GH/J-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=8A
VGS =10V
0
10
20
30
40
0 4 8 12 16
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
16V
12V
10V
8.0V
VG=6.0V
0
10
20
30
0 4 8 12 16 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
0
2
4
6
8
10
12
14
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.5
0.7
0.9
1.1
1.3
1.5
-50 0 50 100 150
Tj , Junction Temperature ( o C )
Normalized VGS(th) (V)
16V
12V
10V
8.0V
VG=6.0V
120
200
280
360
440
520
600
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=5A
TC=25oC
AP18N20GH/J-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
Q
VG
10V
QGS QGD
QG
Charge
1
10
100
1000
10000
1 112131415161
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0
3
6
9
12
15
0 6 12 18 24 30
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =100V
VDS =130V
V DS =160V
ID=10A
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
3
6
9
12
15
0246810
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=25oC
VDS =5V
Tj=150oC
