PHASE CONTROL SCRs 7.4 TO 25 AMPERES 241 104 230.1 107 230.2 GE TYPE c10 ci JEDEC 2NTTTOA 2N1770-78 2N1842-50 ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION Ir(R Max. RMS on-state current (A) 1 average on-state current TIAV) conduction (A) @ Tg (C) \ one TSM surge current (A) re Max. |?t for fusing for > 1.5 msec (A Vv on-state conduction, rated {Vv} R resistance, dc, JC ccm) Max. holding current @ Cc (mA) time @1 c @1 c Typical turn-on time (usec) . turned-on current di/dt (A/usec) T. Junction operating temperature range ("C) 40 to 110 BLOCKING Typical critical rate-of-rise of off-state dv/dt voltage. Exponential @ max. rated T, (V/usec) FIRING a , required gate current to trigger st @ -65C @ c @ 25C Max. required gate voltage to trigger (V} c @ 40C @ 25C Min. gate voltage to trigger (V)} @ 110C @ 125C @ 150C VOLTAGE TYPES Repetitive Peak Forward and Reverse Voltages 2N1770 25 cu 50 C116F1 C116A1 C116B1 C116C1 C11601 Cti6E1 C116M1 700 800 - 241 (C222 PACKAGE OUTLINE NO. 242,3, 4, & 6 (C220). *C123 isolated version of C122. 139a SCR C10 SERIES 2N1770A-2N1777A The General Electric C10 Series (2N1770A-2N1777A) Silicon Controlled Rectifier is a reverse blocking triode thyristor semiconductor for use in low power switching and phase control applications requiring blocking voltages up to 400 volts, and RMS load currents up to 7.4 amperes. This series device is designed to meet MIL-S-19500/168 , and has full blocking voltage ratings from 65C to +150C. The following G. E. Co., low-current SCR types are also available in the same package outline: C11 (2N1770-2N1778, 2N2619) (Pub. #150.21)T; = 125C, up to 600V PRV (Pub. #150.22)-T; = 105C, up to 600V PRV C15 C10U (2N1770A) C1OF (2N1771A) C10A (2N1772A) C10G (2N1773A) C10B (2N1774A) C10H (2N1775A) C10C (2N1776A) C10D (2N1777A) MAXIMUM ALLOWABLE RATINGS 25 Volts* 50 Volts* 100 Volts* 150 Volts* 200 Volts* 250 Volts* 300 Volts* 400 volts* 25 Volts* 50 Volts* 100 Volts* 150 Volts* 200 Volts* 250 Volts* 300 Volts* 400 Volts* 35 Volts* 75 Volts* 150 Volts* 225 Volts* 300 Volts* 350 Volts* 400 Volts* 500 Volts* Values apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for which maximum Vyoy and Vaoy ratings apply = 18C per watt. Peak Forward Voltage, PF'V. A480 volts RMS Forward Current, On-State Average Forward Current, On-State, Half Sine Wave, Io Average Forward Current, On-State Peak One-cycle Surge Forward Current, Ipy (surge) I*t (for fusing) 7.4 amperes (all conduction angles) 4.7 amperes at Te = 105C* Depends on conduction angle (see Chart 3, 5 and 7) 60 amperes* Calculate from Chart 9 Turn-On Current Limit Peak Gate Power Dissipation, Pey See Chart 10 5 watts* Average Gate Power Dissipation, Pg (av) Peak Gate Current, Ieru Peak Gate Voltage, Forward and Reverse, Veru and Vers Storage Temperature, Trt, 0.5 watts* 2 amperes* 10 volts* 65C to +150C* Operating Temperature, T; 65C to +150C* Stud Torque *Indicates data included on JEDEC type number registration. **NOT TO EXCEED GATE POWER RATINGS 663 15 lb-in (17 kg-cm)CHARACTERISTICS C10 SERIES | TT | sympot | min. | MAX. | UNITS TEST CONDITIONS PEAK REVERSE OR Tro FORWARD BLOCKING or CURRENTtT Trou mA Tc = 65C to +150C C10U (2N1770A) _ 9.0 Vrox = Vrou = 25V Peak C10F (2N1771A) 9.0 Vrom = Vrou = 50V Peak C10A (2N1772A) 9.0 Vrom = Vrow = 100V Peak C10G(2N1778A) 8.0 Vrom = Vrom = 150V Peak C10B(2N1774A) 6.0 Vrom = Vrouw = 200V Peak C10H (2N1775A) 5.0 Vrom = Vrou = 250V Peak C10C(2N1776A) __ 4.0 Vrom = Vrox = 300V Peak C10D(2N1777A) 2.0 Vrouw = Vrow = 400V Peak FULL CYCLE AVG. Tax avy REVERSE OR FORWARD or Te = +105C, Io = 4.7A BLOCKING CURRENT} Trx ay mA 180 Conduction Angle C10U (2N1770A) _ 4.5* Vixa = Vexu = 25V Peak C10F (2N1771A) a 4.5* Vaxa = Vexu = 50V Peak C10A (2N1772A) 4.5* Vaxw = Verxa = 100V Peak C10G(2N1773A) _ 4.0* Vaxe = Vex = 150V Peak C10B (2N1774A) 3.0* Vuixa = Vrxu = 200V Peak C10C (2N1776A) 2.0* Vix = Vexs = 300V Peak C10D (2N1777A) _ 1.0* Vaxa = Vrxu = 400V Peak GATE TRIGGER CURRENT Ter 15 mAdc To = 425C, Vex = 12 Vde, Ri = 250 ohms 30* mAdc Te = 65C, Vex = 12 Vde, Ri = 250 ohms GATE TRIGGER VOLTAGE Ver 2.0* Vde Tc = 65C to +150C, Vex = 12 Vde, Ri = 250 ohms 0.2* Vde Tex +150C, Vexm = Rated Vrom, Ri = 250 ohms PEAK ON-VOLTAGE Vru 1.85 Vv To = +25C, Irn = 15A Peak, 1 millisecond wide pulse. Duty cycle = 1%. HOLDING CURRENT Tuo 25 mAde | Tc = +25C, Anode supply 24 Vde, Gate Supply = 7V, 20 ohms. Initial forward current pulse = 0.5A, 0.1 millisecond to 10 milliseconds wide. EFFECTIVE THERMAL RESISTANCE (DC) 93-0 3.1 C/watt | Junction to case. {Values apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for which maximum Vrouw and Vrom ratings apply equals 18C/watt. *Indicates data included on JEDEC type number registration. OUTLINE DRAWING (Complies with JEDEC registered TO-64 outline) J Nt - E B TERM.2 [A> ON oT (CATHODE) | TERM. WTO | 3(ANODE) | 4 oI posts po Pr 20 i 1 V4 TURN-ON CURRENT LIMIT 3 C10 SERIES NOTES: (1) SUGGESTED COOLING FIN DESIGNS. FINAL [ DESIGN SHOULD BE CHECKED TO ASSURE THAT STUD TEMPERATURE DOES NOT 16 EXCEED VALUE SPECIFIED IN CHART 3 {2) ALL FINS 1/16" THICK COPPER -FINS PAINTED ~ STUD MOUNTED DIRECTLY JUNCTION TEMPERATURE;65C TO FiN- MINIMUM FIN SPACING TO +150C 1 INCH. 14 3 Tt Tt tT (3) RESISTIVE OR INDUCTIVE LOAD ,50 MINIMUM CURRENT REQUIRED e TO 400 Hz ~FREE CONVECTION 5 [--- TO FIRE ALL UNITS AT: x COOLING. a MAX. +25C ~65C wi (4) CURVES SHOWN ARE FOR 180 CONDUCTION l2/-ALLOWABLE-7> 2! z ANGLE. FOR OTHER CONDUCTION ANGLES, 2 PEAK GATE w \\ | 1 MULTIPLY CURRENT SCALE BY THE VOLTAGE= @& MINIMUM b FOLLOWING FACTORS: 10.0V, VOLTAGE ig 0G- 1.40 3 { a A TO FIRE & aa a 10 tT o! ALY ALL UNITS & 120 -0.80 5 A DOV 3 90 - 0.70 8 Ve A + 2 60 - 060. \4 bo o . Tal & ~ ~ 30 - 0.45 wu 8 0 FOR NO FIRING AP Sore no VF z K. NX < \*O 10 20 30 40] 8 4 NS \ GATE CURRENT- MA tw NSN 2 N & N 2 4 8 ' & PN z SHADED AREAS ws = REPRESENT LOCUS* MAXIMUM. ALLCWABLE / 3 OF POSSIBLE FIRING | HOT AN TANEOUS. GATE | F alt POINTS FROM-65C __ "4 power = 5.0 WATTS 2 \ 2 TO + 07 Sy " 2 ~ ee \ | \ to 4 1 fe \\ NON MAX. ALLOWABLE PEAK Ns GATE CURRENT = 2.0 A> . . 00 20 eo 30 100 0 40 0 04 08 2 16 20 24 AMBIENT TEMPERATURE-C INSTANTANEOUS GATE CURRENT- AMPERES 7 MAXIMUM FORWARD CURRENT VS. AMBIENT 8 TRIGGERING CHARACTERISTICS TEMPERATURE FOR VARIOUS FIN SIZES 60 T T T one 1000 20C TO +150C 800 o nm 600 = IN 400 wr 50 oN no w -65C TO -20C Po. 200 Wi a = 40 100) , 80 5 60 we 0 30 3 NOTES :(1) FOR CALCULATING I71 w RATINGS oO x 5 n a < = x iL Ld MAXIMUM ALLOWABLE FORWARD CURRENT- AMPERES OPEN CIRCUIT, 25OHMS RISE TIME=4 MICRO- SECONDS(I0% TO 90%). oD 15 2 3 4 5 67 83 fon 0.2 04 060810 2 466 6 0 20 4 60 80 100 . PULSE TIME ~MILLISECONDS , TIME FROM START OF CURRENT FLOW- MICROSECONDS 9 MAXIMUM ALLOWABLE NON-RECURRENT 10 TURN-ON CURRENT LIMIT g SUB-CYCLE SURGE CURRENT RATING # 4 =e rT Tttiy T - Hote e NOTES: (I) AT RATED LOAO CONDITIONS & THT tt ie {2) TENGTION. Pe RA TURE DRIOR 5 JUNCTION TO CASE & 60 H TTT w NOTE : CURVE DEFINES TEMP RiSE OF JUNCTION ABOVE 2 g CASE FOR SINGLE LOAD PULSE OF DURATION t. PEAK $ a oe 3 ALLOWABLE DISSIPATION IN RECTIFIER FOR TIME , iF 40 2 7 STARTING FROM CASE TEMP, EQUALS {50C (MAX 1 z p Tz) MINUS MAXIMUM CASE TEMP DIVIDEO BY THE (eee TRANSIENT THERMAL IMPEDANCE: [ 1 I MT 3 Z Pp 180 c- Te $ z A TT] PreansSo COM 20 = w - FOR OPTIMUM RATINGS AND FURTHER INFORMATION, SEE PUBLICATION 200.9 bt = 4 ENTITLED POWER SEMICONDUCTOR RATINGS UNDER TRANSIENT AND H+ rr INTERMITTENT LOADS po jy yt 2 9 a LET TT nie a . t 2 3 4 everes ae cps 20 3% 40 5060 = OOoL 002 00 ol 02 0S : Time tl SECONDS 2 8 10 20 50 100 11 MAXIMUM ALLOWABLE NON-RECURRENT 12 MAXIMUM TRANSIENT PEAK SURGE FORWARD CURRENT THERMAL IMPEDANCE