1N4448
FAST SWITCHING DIODE
Data Sheet 2767, Rev. -
Features
! Fast Switching Speed
! Glass Package Version for High Reliability A B A
! High Conductance
! Available in Both Through-Hole and Surface
Mount Versions C
D
1N4448
Mechanical Data
! Case: DO-35
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity : Cathode Band
! Weight: DO-35 0.13 grams
! Marking: Cathode Band Only
Maximum Ratings @TA=25°C unless otherwise speci f i ed
Characteristic Symbol Value Unit
Peak Repetit i ve Reverse Voltage
Worki ng Peak Reverse Voltage
DC Blocki ng Voltage
VRRM
VRWM
VR 75 V
Forward Continuous Current (Note 1) IFM 300 mA
Rectifi ed Current (Average), Half W a ve Rectifi cation with
Resisti ve Load and f ≧ 50MHz (Note 1) IO 150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0µs IFSM 500
2000 mA
Power Dissipati on (Note 1)
Derate Above 25°C Pd 500
2.85 mW
mW/°C
Thermal Resi stance, Junction to Ambi ent Air (Note 1) RθJA 300 K/W
Operating and Storage Tem perature Range Tj, TSTG -65 to +200 °C
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
DO-35
Dim Min Max Min Max
A 25.40 — 1.000 —
B — 4.00 — 0.157
C — 0.60 — 0.024
D — 2.00 — 0.079
in mm In inch
Electrical Characteristics @TA=25°C unless otherwise spec i fied
Characteristic Symbol Min Max Unit
Test Condition
Maximum Forward Voltage VFM — 1.0 V IF = 10mA
Maxim um Peak Reverse Current IRM —
25
5.0
50
100
nA
µA
µA
nA
V
R = 20V
V
R = 75V
V
R = 20V, Tj = 150°C
V
R = 75V, Tj = 150°C
Capacitance Cj — 4.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr — 4.0 ns
I
F = 10mA to IR = 1.0mA
V
R = 6.0V, RL = 100Ω
Note: 1. Di ode on Ceramic S ubstrate 10mm x 8m m x 0.7mm.
1
10
100
1000
10,000
0 100 200
I , LEAKAGE CURRENT (nA)
R
T , JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
j
V = 20V
R
10
1.0
100
1000
0.1
0.01
01
2
I , INSTANTANE
O
US F
O
RWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
F
1N4448
FAST SWITCHING DIODE
Data Sheet 2767, Rev. -
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that ma y result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
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hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
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