Features
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GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
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GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
CGA-6618Z
DUAL CATV 1MHz to 1000MHz HIGH
LINEARITY GaAs HBT AMPLIFIER
RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed
with the InGaP process technology for excellent reliability. A Darlington configura-
tion is utilized for broadband performance. The heterojunction increases break-
down voltage and minimizes leakage current between junctions. The CGA-6618Z
contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring
excellent second orfer performance. The second or third order non-linearities are
greatly improved in the push pull configuration.
1
2
3
4
8
7
6
5
Amplifier Configuration
Lead-Free, RoHS Compliant,
and Green Packaging
Excellent CSO/CTB/XMOD
Performance at +34dBmV
Output Power Per Tone
Dual Devices in Each SOIC-8
Package Simplify Push-Pull
Configuration PC Board Lay-
out
ESOP-8 Package
Applications
CATV Head End Driver and
Predriver Amplifier
CATV Line Driver Amplifier
DS100812
Package: ESOP-8
CGA-6618Z
Dual CATV
1MHz to
1000MHz
High Linearity
GaAs HBT
Amplifier
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 13.8 dB 50MHz
14.1 dB 500MHz
12.4 13.4 14.4 dB 870MHz
12.0 13.0 14.0 dB 1000MHz
OIP2, Tone Spacing=1MHz, POUTper
tone-+6 dBm
76.5 dBm 50 MHz
77.5 dBm 250MHz
70.0 72.0 dBm 500MHz
OIP3, Tone Spacing=1MHz, POUTper
tone-+6dBm
38.0 dBm 50MHz
39.0 dBm 500MHz
38.0 40.0 dBm 870MHz
Output Power at 1dB Compression 20.0 dBm 50MHz
21.0 dBm 500MHz
19.5 21.5 dBm 870MHz
Input Return Loss 15.5 dB 500MHz
10 dBm 100 - 870MHz
Output Return Loss 12.5 dB 500MHz
9.0 dB 100 - 870MHz
Noise Figure - Balun Insertion Loss
Included 5.3 dB 50MHz
5.4 dB 500MHz
5.6 6.6 dB 870MHz
Test Conditions: VS=8V, ID=160mA Typ., RBIAS =33Ω, TL=25°C, ZS=ZL=75Ω, Push Pull Application Circuit
2 of 10 DS100812
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CGA-6618Z
Absolute Maximum Ratings
Parameter Rating Unit
Max Device Current (ID)240mA
Max Device Voltage (VD)7V
Max RF Input Power +20 dBm
Max Junction Temp (TJ)+150°C
Operating Temp Range (TL) -40 to +85 °C
Max Storage Temp +150 °C
Min Storage Temp -65 °
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(T
J-TL)/RTH, j-l and TL=TLEAD
Parameter Specification Unit Condition
Min. Typ. Max.
Worst Case Over Band, CSO 81 dBc 79 Ch., Flat, +34dBmV
Worst Case Over Band, CTB 70 dBc 79 Ch., Flat, +34dBmV
Worst Case Over Band, XMOD 63 dBc 79 Ch., Flat, +34dBmV
Device Operating Voltage 4.8 5.1 5.4 V
Device Operating Current 144 160 176 mA
Thermal Resistance 35 °C/W (Junction to Lead)
Test Conditions: VS=8V, ID=160mA Typ., RBIAS =33Ω, TL=25°C, ZS=ZL=75Ω, Push Pull Application Circuit
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Gain vs. Frequency
10
11
12
13
14
15
16
17
18
0 100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
Gain (dB)
-40C
+25C
+85C
Typical RF Performance: VS=8V, ID=160mA @ TL=+25°C, RBIAS=33 Ohms, Push-Pull Config.
|S11| (dB) vs. F r equ en cy
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
|S11| (dB)
-40C
+25C
+85C
|S22| (dB) vs. Frequency
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
|S22| (dB)
-40C
+25C
+85C
3 of 10DS100812
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CGA-6618Z
CTB/CSO/XMOD 34d BmV/Ch an. , Fl at
40
50
60
70
80
90
100
0 50 100 150 200 250 300 350 400 450 500 550 600
Freq. (MHz)
dBc
Xmod CTB
CSO+ CSO-
Thi rd Order Inter cept Point vs. Frequ en cy over T empera ture
20
25
30
35
40
45
50
0 100 200 300 400 500 600 700 800 900 1000
Freq. (M Hz)
IP3 (dBm)
-40C
+25C
+85C
Seco nd Order Intercept Po int vs. Frequency over Tem per ature
60
65
70
75
80
85
90
0 50 100 150 200 250 300 350 400 450 500 550
Freq. (MHz)
IP2 (dBm)
-40C
+25C
+85C
Noise F i g ure vs. F requ ency Over Temperat u re
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0 100 200 300 400 500 600 700 800 900 1000
Freq. (MHz)
NF(dB)
-40C
+25C
+85
Third Harmonic vs. Pout and Freq.
Data sho wn is typi cal at 25C
40
50
60
70
80
90
100
0123456
Pout (dBm)
IM3 (dBc)
66MHz
100MHz
250MHz
500MHz
Second Harmonic vs. Pout and Freq.
Data shown is typical at 25C
40
50
60
70
80
90
100
0123456
Pout (dBm)
IM2 (dBc)
66MHz
100MHz
250MHz
500MHz
Typical RF Performance: VS=8V, ID=160mA @ TL=+25°C, RBIAS=33 Ohms, Push-Pull Config.
4 of 10 DS100812
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CGA-6618Z
CSO/CTB/XMOD Performance:
V
S
=8V, I
D
=150mA @ T
L
=+25°C, R
BIAS
=39 Ohms, Push-Pull Config, 79 Ch. Flat Analog, No Digital Channels.
Push-Pull CGA-6618 CTB vs. Pout and Freq.
40
50
60
70
80
90
100
0 100 200 300 400 500 600
Frequency (MHz)
dBc
32dBmV 34dBmV
36dBmV 38dBmV
40dBmV 42dBmV
Push-Pull CGA-6618 XMOD vs. Pout and Freq.
40
50
60
70
80
90
100
0 100 200 300 400 500 600
Fr eq uency (MHz)
dBc
32dBmV 34dBmV
36dBmV 38dBmV
40dBmV 42dBmV
Push-Pull CGA-6618 CSO- vs. Pout and Freq.
40
50
60
70
80
90
100
0 100 200 300 400 500 600
Fr eq u en cy (MHz)
dBc
32dBmV 34dBmV
36dBmV 38dBmV
40dBmV 42dBmV
Push-Pull CGA- 6618 C SO+ vs . Pout and Freq.
40
50
60
70
80
90
100
0 100 200 300 400 500 600
Frequency (MHz)
dBc
32dBmV 34dBmV
36dBmV 38dBmV
40dBmV 42dBmV
5 of 10DS100812
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CGA-6618Z
Gain & Isolation vs. Frequency
0
2
4
6
8
10
12
14
16
18
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Gain (dB)
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
Isolation (dB)
Gai n (dB)
Isolation (dB)
|S11| & |S22| vs. Freq u en cy
-40
-35
-30
-25
-20
-15
-10
-5
0
0.00.51.01.52.02.53.03.54.0
Fr equency (GHz)
dB
|S11|
|S22|
Typical RF Performance - Single Ended - 50 Ohm System
V
S
=8V, I
D
=80mA (one amp biased), T
L
=+25°C, R
BIAS
=33 Ohms
Gain & Isolation vs. Frequency
0
2
4
6
8
10
12
14
16
18
0.00.51.01.52.02.53.03.54.0
Frequency (GHz)
Gain (dB)
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
Isolati on ( dB)
Ga in (d B )
Is o lation (dB)
Typical RF Performance - Single Ended - 37.5 Ohm System
V
S
=8V, I
D
=80mA (one amp biased), T
L
=+25°C, R
BIAS
=33 Ohms
|S11| & |S22| vs. Fr eq u en cy
-40
-35
-30
-25
-20
-15
-10
-5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
dB
|S11|
|S22|
6 of 10 DS100812
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CGA-6618Z
50MHz to 870MHz Application Circuit Schematic
50MHz to 870MHz Evaluation Board Layout
1
2
3
4 5
6
7
8
RF IN
Vs
RF OUT
Vs
Macom
ETC1-1-13
1000 pF
1000 pF
1000 pF
1000 pF
RBias
220 nH
220 nH
RBias
Macom
ETC1-1-13
1 µF
Tant. 0.01 µF 1000 pF 68 pF
1 µF
Tant. 0.01 µF 1000 pF 68 pF
CGA-6618Z
ECB-101611 Rev A
ESOP-8
Push-Pull
Eval Board
RF OUTPUT
RF INPUT
.01uF
1000pF
68pF
220nH
220nH 68pF
1000pF
.01uF
1000pF
1000pF
1000pF
1000pF
Balun ETC1-1-13 Balun ETC1-1-13
Rbias
Rbias
1uF Tant.
1uF Tant.
7 of 10DS100812
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CGA-6618Z
5MHz to 100MHz Application Circuit Schematic
5MHz to 100MHz Evaluation Board Layout
1
2
3
4 5
6
7
8
RF IN
Vs
RF OUT
Vs
Macom
ETC1-1T
RBias
10 µH
10 µH
RBias
Macom
ETC1-1T
1 µF
Tant. 0.01 µF 1000 pF 68 pF
1 µF
Tant. 0.01 µF 1000 pF 68 pF
0.01 µF
0.01 µF 0.01 µF
0.01 µF
CGA-6618Z
ECB-101611 Rev A
ESOP-8
Push-Pull
Eval Board
RF OUTPUT
RF INPUT
.01uF
1000pF
68pF
10uH
10uH 68pF
1000pF
.01uF
0.01uF
0.01uF
0.01uF
0.01uF
Balun ETC1-1T Balun ETC1-1T
Rbias
Rbias
1uF Tant.
1uF Tant.
8 of 10 DS100812
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CGA-6618Z
Return Loss vs. Freq uency
-30
-25
-20
-15
-10
-5
0
0 102030405060708090100
Fre quency (MHz)
|S
11
| and |S
22
| (dB)
|S11|
|S22|
5 - 100 MHz Application Circuit: VS=8V, ID=160mA @ TL=+25°C, Push-Pull Config.
P1dB and IP3 vs. Frequency
16
17
18
19
20
21
22
0 102030405060708090100110
Frequency (M Hz)
P1dB (dBm)
34
35
36
37
38
39
40
IP3 (dBm)
P1dB
IP3
Noise Figure vs. Frequency
0
1
2
3
4
5
6
7
8
0 102030405060708090100110
Fr equency (M Hz)
NF (dB)
Gain vs. Frequency
6
8
10
12
14
16
0 102030405060708090100
Frequenc y (MHz)
|S
21
| (dB)
9 of 10DS100812
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CGA-6618Z
Suggested Pad Layout
Package Drawing and Marking
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
Pin Function Description
1RF IN
Device 1. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the schematic.
2, 3,
6, 7
GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as
possible.
4RF IN
Device 2. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the schematic.
5RF OUT/VCC
Device 2. RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF
choke inductor. Because DC biasing is present on this pin, a DC-blocking capacitor should be used in most appli-
cations. The supply side of the bias network should be well bypassed.
8RF OUT/VCC
Device 1. Same as pin 5.
EPAD GND Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum
thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended
land pattern.
PCB Pad Layout
Dimensions in inches [millimeters]
Sized for 31 mil thick FR-4
Lot Code
CGA6618
.088 [2.25]
DETAIL A
.061[1.549]
.155 [3.937] .025
.013 [.33] x 45°
.008
.003 [.0 76 ]
SEATINGPLANE
1
5
32
BOTTOM VIEW
.058[1.473]
TOP VIEW
SIDE VIEW
ENDVIEW
PARTING LINE
.008[.203]
4
678
.194 [4 .9 3]
.061 [1.549]
.016 [.406].050 [1.27]
.194 [4.928]
5°
SEEDETAILA
.236 [5.994]
.155 [3.937]
EXPOSED PAD
.112
[2.85]
PACKAGE TYPE:
ESOP-8
10 of 10 DS100812
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CGA-6618Z
Part Identification
Ordering Information
Part Number Description Reel Size Devices/Reel
CGA6618ZSB 5pcs Sample Bag N/A N/A
CGA6618ZSQ 25pcs Sample Bag N/A N/A
CGA6618ZSR Dual CATV Broadband HBT Amp 7” 100pcs
CGA6618Z Dual CATV Broadband HBT Amp 7” 500pcs
CGA6618ZPCK-410 50 MHz to 870 MHz Eval Bd N/A N/A
CGA6618ZPCK-411 5MHz to 100MHz Eval Bd N/A N/A
CGA-6618Z