9550 ,) 9 $ 'LRGH'LH 6/;+ 35(/,0,1$5< 'LHVL]H[PP Doc. No. 5SYA1659-00 Aug 02 )DVW5HFRYHU\/RZORVVHV 6RIWUHYHUVHUHFRYHU\ +LJKUXJJHGQHVV 0D[LPXP5DWHG9DOXHV 3DUDPHWHU Maximum Reverse Voltage (Tj = 25C, unless specified otherwise) 6\PERO &RQGLWLRQV 9DOXHV 8QLW VRRM 1700 V DC Forward Current IF 100 A Maximum Forward Current IFM 200 A Operating Temperature Tj -40 .. +150 C &KDUDFWHULVWLF9DOXHV 3DUDPHWHU Forward Voltage Reverse leakage current Limited by Tjmax (Tj = 25C, unless specified otherwise) 6\PERO VF IR &RQGLWLRQV IF = 100 A VR = 1700 V PLQ W\S PD[ 8QLW Tj = 25 C 1.7 2.0 Tj = 125 C 2.05 Tj = 25 C Tj = 125 C 2.3 V V 100 A 2 mA Reverse recovery current Irrm IF = 100 A, VCC = 1700 V, 85 A Reverse recovery charge Qrr di/dt = 1100 A/s, L = 100 nH, 25 C Reverse recovery time trr Tj = 125 C, Inductive load, 600 ns Switch : 5SMX12M1700 13 mJ Reverse recovery energy Erec $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH 6/;+ 0HFKDQLFDO&KDUDFWHULVWLFV 3DUDPHWHU 8QLW LxW 13.6 x 6.8 mm Exposed LxW Front metal 11.9 x 5.1 mm Thickness 370 15 m 4 m 1.2 m Overall die Dimensions Metallization 1) Front Back 1) AISi1 AI / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. 2XWOLQH'UDZLQJ 1RWH$OOGLPHQVLRQVDUHVKRZQLQPP $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH $%%6ZLW]HUODQG/WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1659-00 Aug 02