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Doc. No. 5SYA1659-00 Aug 02
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Maximum Reverse Voltage VRRM 1700 V
DC Forward Current IF100 A
Maximum Forward Current IFM Limited by Tjmax 200 A
Operating Temperature Tj-40 .. +150 °C
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Tj = 25 °C 1.7 2.0 2.3 V
Forward Voltage VFIF = 100 A Tj = 125 °C 2.05 V
Tj = 25 °C 100 µAReverse leakage current IRVR = 1700 V Tj = 125 °C 2 mA
Reverse recovery current Irrm 85 A
Reverse recovery charge Qrr 25 µC
Reverse recovery time trr 600 ns
Reverse recovery energy Erec
IF = 100 A, VCC = 1700 V,
di/dt = 1100 A/µs, Lσ = 100 nH,
Tj = 125 °C, Inductive load,
Switch : 5SMX12M1700 13 mJ
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Overall die L x W 13.6 x 6.8 mm
Exposed
Front metal L x W 11.9 x 5.1 mm
Dimensions
Thickness 370 ± 15 µm
Front AISi1 4 µm
Metallization Back1) AI / Ti / Ni / A g 1.2 µm
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Lt d, Semiconductors, Doc. No. 5SYA2033-01 April 02.
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