HI-SINCERITY Spec. No. : HA200217 Issued Date : 2002.09.01 Revised Date : 2005.02.04 Page No. : 1/4 MICROELECTRONICS CORP. HBC517 NPN EPITAXIAL PLANAR TRANSISTOR Description General Purpose High Darlington Transistor TO-92 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) ............................................................................................................... 625 mW * Maximum Voltages and Currents (TA=25C) VCBO Collector to Base Voltage ........................................................................................................................... 40 V VCEO Collector to Emitter Voltage ........................................................................................................................ 30 V VEBO Emitter to Base Voltage .............................................................................................................................. 10 V IC Collector Current ........................................................................................................................................ 500 mA Electrical Characteristics (TA=25C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 10 - - V Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1 uA Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 1 uA DC Current Gain hFE IC=100mA, VCE=2V 30K - - Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=1mA - - 1 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=1mA - 1.5 2 V Current Gain Bandwidth Product fT IC=100mA, VCE=2V, f=100MHz - 220 - MHz VCB=10V, f=1MHz, IE=0 - 5 - pF Collector Output Capacitance Cob *Pulse Test: Pulse Width 380us, Duty Cycle2% HBC517 HSMC Product Specification HI-SINCERITY Spec. No. : HA200217 Issued Date : 2002.09.01 Revised Date : 2005.02.04 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Saturation Voltage & Collector Current Current Gain & Collector Current 1000 100000 VCE(sat) @ IC=100IB hFE @ VCE=2V o o Saturation Voltage (mV) hFE 75 C o 125 C 25 C 100 o 125 C o 75 C o 25 C 10 10000 1 10 100 1 1000 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) On Voltage & Collector Current Saturation Voltage & Collector Current 10000 10000 VBE(on) @ VCE=2V On Voltage (mV) Saturation Voltage (mV) VBE(sat) @ IC=100IB o 25 C 1000 o o 125 C 75 C 100 o 25 C 1000 o o 125 C 75 C 100 1 10 100 1000 Collector Current-IC (mA) 1 10 100 Collector Current-IC (mA) PD - Ta 0.7 PD(W), Power Dissipation 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 200 o Ambient Temperature-Ta ( C) HBC517 HSMC Product Specification HI-SINCERITY Spec. No. : HA200217 Issued Date : 2002.09.01 Revised Date : 2005.02.04 Page No. : 3/4 MICROELECTRONICS CORP. TO-92 Dimension A Pb Free Mark Pb-Free: " . " (Note) Normal: None B 1 DIM A B C D E F G H I 1 2 3 Marking: 2 2 H BC 5 1 7 3 Control Code Date Code 3 Note: Green label is used for pb-free packing C Pin Style: 1.Collector 2.Base 3.Emitter D H Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 G Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5 *2 *2 *: Typical, Unit: mm 1 I E F 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension H2 H2A H2A H2 D2 A H3 H4 H L L1 H1 W1 W D1 F1F2 T2 T T1 P1 P P2 D DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBC517 HSMC Product Specification HI-SINCERITY Spec. No. : HA200217 Issued Date : 2002.09.01 Revised Date : 2005.02.04 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C 5 C 5sec 1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBC517 o o o o 260 C +0/-5 C 5sec 1sec HSMC Product Specification