HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200217
Issued Date : 2002.09.01
Revised Date : 2005. 02.04
Page No. : 1/4
HBC517 HSMC Product Specification
HBC517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
General Purpose High Darlington Transistor
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150 °C
Junction Temperature........................................................................................................... ........ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C)............................................................................................................... 625 mW
• Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage........................................................................................................................... 40 V
VCEO Collector to Emitter Voltage........................................................................................................................ 30 V
VEBO Em itter to Base Voltage.............................................................................................................................. 10 V
IC Collector Current........................................................................................................................................ 500 mA
Electrical Characteristics (TA=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 10 - - V
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1 uA
Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 1 uA
DC Current Gain hFE IC=100mA, VCE=2V 30K - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=1mA - - 1 V
Base-Em itter Saturation Voltage VBE(sat) IC=100mA, IB=1mA - 1.5 2 V
Current Gain Ban d width Prod uc t fTIC=100mA, VCE=2V,
f=100MHz - 220 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 5 - pF
*Pulse Test: Pulse Width ≤380us, Dut y Cycle ≤2%
TO-92
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200217
Issued Date : 2002.09.01
Revised Date : 2005. 02.04
Page No. : 2/4
HBC517 HSMC Product Specification
Characteristics Curve
Current G ain & Col lect or Cur ren t
10000
100000
1 10 100 1000
Coll e c tor Cur r e nt -I
C
(mA)
hFE
25
o
C
75
o
C
125
o
C
hFE @ V
CE
=2V
Saturation Volt age & Collector C ur rent
10
100
1000
1 10 100 1000
Coll e c tor Cur r e nt -I
C
(mA)
Saturation Voltage (mV)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=100I
B
Saturation Voltage & Collect or Current
100
1000
10000
1 10 100 1000
Coll e c tor Cur r e nt -I
C
(mA)
Saturation Voltage (mV)
25
o
C
75
o
C125
o
C
V
BE(sat)
@ I
C
=100I
B
On Voltage & Collector Current
100
1000
10000
1 10 100
Collector Curren t-I
C
(mA)
On Voltage (mV)
25
o
C
75
o
C125
o
C
V
BE(on)
@ V
CE
=2V
PD - Ta
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 50 100 150 200
Ambient Temper atur e-Ta (
o
C)
PD(W), Power Dissipation
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200217
Issued Date : 2002.09.01
Revised Date : 2005. 02.04
Page No. : 3/4
HBC517 HSMC Product Specification
TO-92 Dimension
TO-92 Taping Dimension
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of customer product design, infringement of patents, or applic at i o n assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Mic roel ectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
31
A
D
B
C
Iα1
E
α2
α3
G
H
2
F
H2AH2A
H2H2 D2
A
H
W
W1
H3
H4
H1
L1
L
P2
P
P1
F1F2 D1 D
T2
T
T1
DIM Min. Max.
A 4.33 4.83
B 4.33 4.83
C 12.70 -
D 0.36 0.56
E-*1.27
F 3.36 3.76
G 0.36 0.56
H-*2.54
I-*1.27
α1-*5°
α2-*2°
α3-*2°
*: Typical, Unit: mm
3-Lead TO-92 Plastic Package
HSMC Package Code: A
DIM Min. Max.
A 4.33 4.83
D 3.80 4.20
D1 0.36 0.53
D2 4.33 4.83
F1,F2 2.40 2.90
H 15.50 16.50
H1 8.50 9.50
H2 - 1
H2A - 1
H3 - 27
H4 - 21
L-11
L1 2.50 -
P 12.50 12.90
P1 5.95 6.75
P2 50.30 51.30
T - 0.55
T1 - 1.42
T2 0.36 0.68
W 17.50 19.00
W1 5.00 7.00
Unit: mm
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
Control Code
Date Code
H
517 CB
Note: Green label is used for pb-free packing
Pin Style: 1.Collector 2.Base 3.Emitter
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200217
Issued Date : 2002.09.01
Revised Date : 2005. 02.04
Page No. : 4/4
HBC517 HSMC Product Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Hum idit y=65%±1 5%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n tained above:
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temperature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature
