MOSFET - Single, N-Channel, Logic Level, SO-8 FL 30 V, 1.15 mW, 230 A NTMFS4C302N www.onsemi.com Features * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 1.15 mW @ 10 V 30 V 230 A 1.7 mW @ 4.5 V D (5,6) MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS "20 V ID 230 A Parameter Continuous Drain Current RqJC (Notes 1, 2, 3) Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TC = 25C Steady State Steady State TC = 25C PD 96 W TA = 25C ID 41 A PD 3.13 W TA = 25C, tp = 10 ms IDM 900 A TJ, Tstg -55 to 150 C IS 128 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 61 A) EAS 186 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Operating Junction and Storage Temperature Source Current (Body Diode) @ 10 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Symbol Value Unit Junction-to-Case - Steady State (Note 2) RqJC 1.3 C/W Junction-to-Ambient - Steady State (Note 2) RqJA 40 Parameter 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2017 February, 2021 - Rev. 3 S (1,2,3) N-CHANNEL MOSFET TA = 25C Pulsed Drain Current G (4) 1 MARKING DIAGRAM D 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 4C02N A Y W ZZ S S S G D 4C02N AYWZZ D D = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Device Package Shipping NTMFS4C302NT1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NTMFS4C302NT3G SO-8 FL (Pb-Free) 5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4C302N/D NTMFS4C302N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 24 VGS = 0 V, VDS = 24 V mV/C TJ = 25 C 1.0 TJ = 125C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ RDS(on) 1.3 2.2 5.8 V mV/C VGS = 10 V ID = 30 A 0.95 1.15 VGS = 4.5 V ID = 30 A 1.35 1.7 mW Forward Transconductance gFS VDS = 3 V, ID = 30 A 135 S Gate Resistance RG TA = 25 C 0.75 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 70 Total Gate Charge QG(TOT) 37 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge 5780 VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 2320 pF 9.0 nC 16 7.0 QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A 82 nC SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 20 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 19 ns 42 11 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.75 TJ = 125C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 56 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 29 ns 27 69 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS4C302N TYPICAL CHARACTERISTICS 450 10 V 4.5 V 450 TJ = 25C 3.7 V 250 3.5 V 200 3.3 V 150 3.1 V 2.9 V 100 2.7 V 2.5 V 50 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 0 ID, DRAIN CURRENT (A) 350 300 0 0.5 1 2 1.5 2.5 300 250 200 150 TJ = 125C 100 TJ = 25C 3.5 4.0 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.75 1.55 1.35 1.15 0.95 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (V) 10 2.35 4.5 TJ = 25C 2.15 1.95 1.75 VGS = 4.5 V 1.55 1.35 1.15 VGS = 10 V 0.95 0.75 0 50 100 150 200 250 300 350 400 450 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. VGS Figure 4. On-Resistance vs. Drain Current and Gate Voltage 100000 1.6 VGS = 0 V VGS = 10 V ID = 30 A TJ = 150C 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 3.0 VGS, GATE-TO-SOURCE VOLTAGE (V) 1.95 1.4 2.5 2.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 2.15 1.5 TJ = -55C 0 1.5 3 TJ = 25C ID = 30 A 3 350 50 2.35 0.75 VDS = 3 V 400 4.0 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 400 6V 1.3 1.2 1.1 1.0 0.9 TJ = 125C TJ = 100C 1000 TJ = 85C 100 0.8 0.7 -50 -25 0 25 50 75 100 125 150 10 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTMFS4C302N TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 10000 Coss 1000 Crss 100 10 VGS = 0 V TJ = 25C f = 1 MHz 0 5 10 15 20 25 7 6 5 4 Qgd Qgs 3 VDS = 15 V ID = 30 A TJ = 25C 2 1 0 0 20 10 30 40 50 60 70 80 Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 td(off) VGS = 4.5 V VDD = 15 V ID = 15 A tf 100 tr td(on) 10 1 10 100 10 TJ = 175C TJ = 150C 1 0.1 0.2 100 TJ = 25C 0.3 0.4 0.5 0.6 TJ = -55C 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 100 ms 10 1 VGS < 10 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 1 ms 10 ms dc 0.1 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 90 VGS = 0 V RG, GATE RESISTANCE (W) ID, DRAIN CURRENT (A) 1 9 8 Qg, TOTAL GATE CHARGE (nC) 1000 t, TIME (ns) 30 QT VDS, DRAIN-TO-SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) Ciss 11 10 100 1.1 NTMFS4C302N TYPICAL CHARACTERISTICS 100 RqJA Steady State = 40C/W R(t) (C/W) Duty Cycle = 50% 10 20% 10% 5% 1 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 PULSE TIME (sec) Figure 12. Thermal Response 1000 IPEAK, DRAIN CURRENT (A) 0.001 TJ = 25C 100 TJ = 100C 10 1 1.0E-6 10E-6 100E-6 1.0E-3 10E-3 TIME IN AVALANCHE (S) Figure 13. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 5 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO-8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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