© Semiconductor Components Industries, LLC, 2017
February, 2021 − Rev. 3
1Publication Order Number:
NTMFS4C302N/D
MOSFET – Single,
N-Channel, Logic Level,
SO-8 FL
30 V, 1.15 mW, 230 A
NTMFS4C302N
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS "20 V
Continuous Drain Cur-
rent RqJC (Notes 1, 2,
3) Steady
State
TC = 25°C ID230 A
Power Dissipation
RqJC (Notes 1, 2)
TC = 25°C PD96 W
Continuous Drain Cur-
rent RqJA (Notes 1, 2,
3) Steady
State
TA = 25°C ID41 A
Power Dissipation
RqJA (Notes 1, 2)
TA = 25°C PD3.13 W
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 900 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
150
°C
Source Current (Body Diode) @ 10 ms IS128 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 61 A)
EAS 186 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Note 2) RqJC 1.3 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 40
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
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4C02N
AYWZZ
1
V(BR)DSS RDS(on) MAX ID MAX
30 V 1.15 mW @ 10 V
230 A
1.7 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
Device Package Shipping†
ORDERING INFORMATION
NTMFS4C302NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
4C02N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
NTMFS4C302NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NTMFS4C302N
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
24 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25 °C 1.0
mA
TJ = 125°C 100
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ5.8 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 0.95 1.15
mW
VGS = 4.5 V ID = 30 A 1.35 1.7
Forward Transconductance gFS VDS = 3 V, ID = 30 A 135 S
Gate Resistance RGTA = 25 °C 0.75 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
5780
pF
Output Capacitance COSS 2320
Reverse Transfer Capacitance CRSS 70
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
37
nC
Threshold Gate Charge QG(TH) 9.0
Gate−to−Source Charge QGS 16
Gate−to−Drain Charge QGD 7.0
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V,
ID = 30 A
82 nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
20
ns
Rise Time tr19
Turn−Off Delay Time td(OFF) 42
Fall Time tf11
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A
TJ = 25°C 0.75 1.1
V
TJ = 125°C 0.6
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
56
ns
Charge Time ta29
Discharge Time tb27
Reverse Recovery Charge QRR 69 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NTMFS4C302N
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
31.510.50
0
100
200
150
4.03.53.02.01.5
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
987106543
0.75
1.15
1.55
450350250 400300200
1.15
1.55
2.15
0.75
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
12510075250−25−50
0.8
1.0
1.1
1.3
30252015100
10
100
1000
10000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
50
4.5 V
3.5 V
3.1 V
2.9 V
2.7 V
2.5 V
3.7 V
TJ = 25°CVDS = 3 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
1.35
1.95
TJ = 25°C
ID = 30 A
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
50
VGS = 10 V
ID = 30 A
VGS = 0 V
TJ = 85°C
TJ = 150°C
TJ = 125°C
2.5
0.95
1.95
1.75
1.2
1.4
0.7
1.5
450
2.15
150
3.3 V
2
0
100
200
300
150
350
50
250
450
2.35
0.95
1.6
0.9
4.5
250
300
350
400 4.0 V
1.35
1.75
2.35
2.5
400
100500
150
100000
TJ = 100°C
5
10 V 6 V
NTMFS4C302N
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4
TYPICAL CHARACTERISTICS
Qgs
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
25201510 3050
10
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (W)
100101
1
10
100
1000
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
Coss
Crss
QT
Qgd
VGS = 4.5 V
VDD = 15 V
ID = 15 A
td(off)
td(on)
tr
tf
1000
10000
0
2
4
6
8
11
0 203040 60708090
VDS = 15 V
ID = 30 A
TJ = 25°C
5010
1
3
5
7
9
Figure 10. Diode Forward Voltage vs. Current
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
0.90.80.70.60.50.4
0.1
1
10
IS, SOURCE CURRENT (A)
TJ = 25°CTJ = −55°C
VGS = 0 V
1.0
100
1000
0.1
1
10
100
1000
0.01 1 10 100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
10
0.30.2 1.1
TJ = 175°C
TJ = 150°C
0.1
NTMFS4C302N
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5
TYPICAL CHARACTERISTICS
Figure 12. Thermal Response
PULSE TIME (sec)
0.010.0010.00010.000010.000001
0.001
0.1
1
10
100
R(t) (°C/W)
0.1 1 10 100 1000
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
0.01
RqJA Steady State = 40°C/W
1
10
100
1000
1.0E−6 10E−6 100E−6 10E−3
Figure 13. Maximum Drain Current vs. Time in
Avalanche
TIME IN AVALANCHE (S)
IPEAK, DRAIN CURRENT (A)
TJ = 25°C
TJ = 100°C
1.0E−3
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N DATE 25 JUN 201
8
SCALE 2:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
c
4 X
C
SEATING
PLANE
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
1
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
2X
0.475
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some product
s
may not follow the Generic Marking.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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98AON14036D
DOCUMENT NUMBER:
DESCRIPTION:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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DFN5 5x6, 1.27P (SO−8FL)
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