NOTE: For detailed information on purchasing options, contact your
local Allegro field applications engineer or sales representative.
Allegro MicroSystems, LLC reserves the right to make, from time to time, revisions to the anticipated product life cycle plan
for a product to accommodate changes in production capabilities, alternative product availabilities, or market demand. The
information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no respon-
sibility for its use; nor for any infringements of patents or other rights of third parties which may result from its use.
Recommended Substitutions:
Automotive, Sensorless BLDC Controller
A4960
For existing customer transition, and for new customers or new appli-
cations, refer to A4960KJPTR-A-T.
Date of status change:
A4960KJPTR-T January 29, 2014
This part is in production but has been determined to be NOT FOR
NEW DESIGN. Sale of this part is currently restricted to existing
customer programs already using the part. The part should not be
purchased for new programs or designed into new applications.
Samples are no longer available.
Not for New Design
Description
The A4960 is a three-phase, sensorless, brushless DC
(BLDC) motor controller for use with external N-channel
power MOSFETs and is specifically designed for automotive
applications.
The motor is driven using block commutation (trapezoidal
drive) where phase commutation is determined, without the
need for independent position sensors, by monitoring the motor
back-EMF. A programmable motor start-up scheme allows
the A4960 to be adjusted for a wide range of motor and load
combinations.
An external bootstrap capacitor is used to provide the above
battery supply voltage required for N-channel MOSFETs.
An automatic internal bootstrap charge management scheme
ensures that the bootstrap capacitor is always sufficiently
charged for safe operation of the power MOSFETs. The power
MOSFETs are protected from shoot-through by integrated
crossover control and adjustable dead time.
Integrated diagnostics provide indication of undervoltage,
overtemperature, and power bridge faults and can be configured
to protect the power MOSFETs under most short circuit
conditions. Detailed diagnostics are available as a serial data
word.
The A4960 is supplied in a 32-pin LQFP with exposed pad
for enhanced thermal dissipation (suffix JP). This package
is lead (Pb) free, with 100% matte-tin leadframe plating
(suffix –T).
A4960-DS, Rev. 2
Features and Benefits
3-phase BLDC sensorless start-up and commutation
Gate drive for N-channel MOSFETs
Integrated PWM current limit
7 to 50 V supply voltage operating range
Compatible with 3.3 V and 5 V logic
Cross-conduction protection with adjustable dead time
Charge pump for low supply voltage operation
Extensive diagnostics output
Low current sleep mode
Automotive, Sensorless BLDC Controller
Package: 32-pin LQFP with exposed
thermal pad (suffix JP)
Typical Application
Not to scale
A4960
Applications:
Hydraulic pump
Fuel pump
Urea pump
Blower fan
3-Phase
BLDC
Motor
A4960
VBAT
SPI
A8450
Regulator
Micro-
controller
VBAT
PWM
TACHO
RESET
FAULT
April 24, 2017
Automotive, Sensorless BLDC Controller
A4960
2
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Absolute Maximum Ratings1,2
Characteristic Symbol Notes Rating Unit
Load Supply Voltage VBB –0.3 to 50 V
Logic Supply Voltage VDD –0.3 to 6 V
Terminal VREG VREG –0.3 to 16 V
Terminal CP1 VCP1 –0.3 to 16 V
Terminal CP2 VCP2
VCP1 – 0.3 to
VREG + 0.3 V
Logic Inputs VI
Terminals STRN, SCK, SDI, PWM –0.3 to 6 V
Terminal RESETN – can be pulled to VBB with
>22kΩ –0.3 to 6 V
Logic Outputs VOTerminals SDO, TACHO –0.3 to VDD + 0.3 V
Terminal DIAG VDIAG –0.3 to VDD + 0.3 V
Terminal VBRG VBRG –5 to 55 V
Terminals CA, CB, CC VCx –0.3 to VREG
+ 50 V
Terminals GHA, GHB, GHC VGHx
VCX – 16 to
VCX + 0.3 V
Terminals SA, SB, SC VSx
VCX – 16 to
VCX + 0.3 V
Terminals GLA, GLB, GLC VGLx VREG – 16 to 18 V
Terminal LSS VLSS VREG – 16 to 18 V
Terminal REF VREF –0.3 to 6.5 V
Terminals CSP, CSM VCSx –0.3 to 1 V
Terminal AGND Connect directly to GND
Ambient Operating Temperature
Range TA
Temperature Range K; limited by power
dissipation –40 to 150 °C
Maximum Continuous Junction
Temperature TJ(max) 150 °C
Transient Junction Temperature TJt
Over temperature event not exceeding 10 s,
lifetime duration not exceeding 10 hours,
guaranteed by design characterization.
175 °C
Storage Temperature Range Tstg –55 to 150 °C
1With respect to GND. Ratings apply when no other circuit operating constraints are present.
2Small “x” in pin names and symbols indicates a variable sequence character.
Selection Guide
Part Number Packing*
A4960KJPTR-T 1500 pieces per 13-in. reel
*Contact Allegro for additional packing options
Thermal Characteristics may require derating at maximum conditions, see application information
Characteristic Symbol Test Conditions* Value Unit
Package Thermal Resistance, Junction
to Ambient RθJA
On 4-layer PCB based on JEDEC standard 23 ºC/W
On 2-layer PCB with 3 in.2 copper each side 44 ºC/W
Package Thermal Resistance, Junction
to Pad RθJP 2 ºC/W
*Additional thermal information available on the Allegro website
Automotive, Sensorless BLDC Controller
A4960
3
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Table of Contents
Specifications 2
Pin-out Diagram and Terminal List 4
Functional Block Diagram 5
Electrical Characteristics Table 6
Timing Diagrams 10
Operation Timing Diagrams 10
Functional Description 12
Functional Description 12
Input and Output Terminal Functions 12
Motor Drive System 13
Rotor position sensing using motor BEMF 13
Commutation Blank Time 14
BEMF Window 14
BEMF Hysteresis 14
Start-up 14
Motor control 15
Phase advance 15
Power Supplies 16
Gate Drives 16
Gate drive voltage regulation 16
Bootstrap charge management 16
Low-side gate drive 17
High-side gate drive 17
Dead Time 17
Sleep Mode and RESETN 17
Current Limit 18
Current sense amplifier 18
Fixed off-time 18
Blank time 19
Diagnostics 19
DIAG pin 19
Serial interface fault output 19
Fault response action 20
Fault Mask register 20
Chip-level diagnostics 20
Chip Fault States: Temperature Thresholds 20
Chip Fault State : VREG Undervoltage 21
Chip Fault State: VDD Undervoltage 21
Bootstrap Undervoltage Fault State 21
MOSFET fault detection 21
MOSFET fault blank time 22
Short fault operation 22
MOSFET Fault State: Short to Supply 22
MOSFET Fault State: Short to Ground 22
MOSFET Fault State: Shorted Winding 22
Serial Interface Description 23
Configuration and control registers 24
Diagnostic register 25
Applications Information 31
Control Timing Diagrams 31
Input/Output Structures 32
Package Outline Drawing 33
Automotive, Sensorless BLDC Controller
A4960
4
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Terminal List Table
Name Number Function Name Number Function
AGND 31 Reference ground LSS 14 Low-side source
CA 26 Bootstrap capacitor, Phase A PAD Exposed thermal pad
CB 22 Bootstrap capacitor, Phase B PWM 6 PWM Input
CC 17 Bootstrap capacitor, Phase C REF 3 Reference voltage input
CP1 29 Pump capacitor RESETN 2 Standby mode control
CP2 28 Pump capacitor SA 25 Motor connection, Phase A
CSM 12 Sense amplifier negative input SB 21 Motor connection, Phase B
CSP 13 Sense amplifier positive input SC 16 Motor connection, Phase C
DIAG 5 Programmable diagnostic output SCK 9 Serial clock input
GHA 24 High-side gate drive, Phase A SDI 10 Serial data input
GHB 20 High-side gate drive, Phase B SDO 8 Serial data output
GHC 18 High-side gate drive, Phase C STRN 11 Serial Strobe (chip select) input
GLA 23 Low-side gate drive, Phase A TACHO 7 Speed output
GLB 19 Low-side gate drive, Phase B VBB 32 Main power supply
GLC 15 Low-side gate drive, Phase C VBRG 1 High-side drain voltage sense
GND 30 Power ground VDD 4 Logic supply
VREG 27 Regulated voltage, above supply
Pin-out Diagram
VBRG
RESETN
REF
VDD
DIAG
PWM
TACHO
SDO
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
GHA
GLA
CB
PAD SB
GHB
GLB
GHC
CC
VBB
A
GND
GND
CP1
CP2
VREG
CA
SA
SC
K
SDI
STRN
CSM
CSP
LSS
GLC
SC
Automotive, Sensorless BLDC Controller
A4960
5
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Functional Block Diagram
Charge
Pump
Regulator
High-Side
Drive
VBAT
CP2
DIAG
LSS
GLA
GHA
SA
Battery +
VREG
Phase A shown
(Repeated for B and C)
VBB
Phase C
Phase B
RGATE
RGATE
PWM
Low-Side
Drive
VBRG
VDS
Monitor
VDS
Monitor
GND
VDD
Diagnostics
and
Protection
RESETN
Gate
Drive
Control
Bridge
Control
Motor
State
Sequencer
STRN
SCK
SDI
SDO
Zero X
Detect
Dead
Time
TACHO
Serial
Interface
Start
Registers
Config
Registers
Start
Sequencer
Run
Control
CSP
CSM
Blank
Time
Comm
Timer
Blank
Time
VRI
CP
CP1
Ref
DAC
VREGCREG
Bootstrap
Monitor
CBOOTA
CA
REF
AGND
Automotive, Sensorless BLDC Controller
A4960
6
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Continued on the next page…
ELECTRICAL CHARACTERISTICS Valid at TJ = –40°C to 150°C, VDD = 5 V, VBB = 7 to 28 V; unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
Supply and Reference
VBB Functional Operating Range1VBB
Operating, outputs active 6 50 V
Operating, outputs disabled 5.5 50 V
No unsafe states 0 50 V
VBB Quiescent Current IBBQ RESETN = high; GHx, GLx = low, VBB = 12 V 10 14 mA
IBBS RESETN = low, sleep mode, VBB = 12 V 10 µA
VDD Logic Supply VDD 3.0 5.5 V
VDD Quiescent Current IDDQ RESETN = high, outputs low 6 16 mA
IDDS RESETN = low 15 µA
VREG Output Voltage VREG
VBB > 9 V, IREG = 0 to 8 mA 12.4 13 13.8 V
7.5 V < VBB≤9V,IREG = 0 to 6 mA 12.4 13 13.8 V
6 V < VBB≤7.5V,IREG = 0 to 5 mA 2×VBB
– 2.5 V
5.5 V < VBB≤6V,IREG < 4 mA 9 10 V
Bootstrap Diode Forward Voltage VfBOOT
ID = 10 mA 0.4 0.7 1.0 V
ID = 100 mA 1.5 2.2 2.8 V
Bootstrap Diode Resistance rD
rD(100mA) = (VfBOOT(150mA) – VfBOOT(50mA)) /
100 (mA) 6.5 15.0 22.5 Ω
Bootstrap Diode Current Limit IDBOOT 250 500 750 mA
System Clock Period tOSC 42.5 50 57.5 ns
Gate Output Drive
Turn-On Time trCLOAD = 500 pF, 20% to 80% 35 ns
Turn-Off Time tfCLOAD = 500 pF, 80% to 20% 20 ns
Pull-Up On-Resistance2RDS(on)UP
TJ = 25°C, IGHx = –150 mA 9 13 17 Ω
TJ = 150°C, IGHx = –150 mA 16 21 27 Ω
Pull-Down On-Resistance RDS(on)DN
TJ = 25°C, IGLx = 150 mA 1.8 3.0 5.0 Ω
TJ = 150°C, IGLx = 150 mA 2.8 4.5 7.0 Ω
GHx Output Voltage High VGHH Bootstrap capacitor fully charged VC – 0.2 V
GHx Output Voltage Low VGHL –10 µA < IGH < 10 µA VSx + 0.3 V
GLx Output Voltage High VGLH –10 µA < IGL < 10 µA VREG – 0.2 V
GLx Output Voltage Low VGLL –10 µA < IGL < 10 µA VLSS + 0.3 V
GHx Passive Pull-Down RGHPD VGSH = 1 V 350
GLx Passive Pull-Down RGLPD VGSL = 1 V 350
Turn-Off Propagation Delay tP(off)
Input change to unloaded gate output change,
see figure 3 200 250 300 ns
Turn-On Propagation Delay tP(on)
Input change to unloaded gate output change,
see figure 3 200 250 300 ns
Dead Time (Turn-Off to Turn-On delay) tDEAD Default power–up state, see figure 3 0.85 1.0 1.15 µs
Automotive, Sensorless BLDC Controller
A4960
7
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Current Limiting
Differential Input Voltage VID VID = VCSP – VCSM 0 200 mV
Reference Input Voltage VREF 0.8 2.0 V
Reference Clamp Voltage VREFC REF tied to VDD 1.84 2 2.16 V
Reference Input Current2IREF –3 0 3 µA
Internal Reference Voltage VRI Default power–up state VREF V
Current Trip Point Error3EITRIP VREF = 2 V –5% +5% %FS
Fixed Off-Time tOFF Default power–up state 30.3 35.6 40.9 µs
Blank Time tBL Default power–up state 2.72 3.2 3.68 µs
Logic Inputs and Outputs
Input Low Voltage VIL
Terminals PWM, SDI, SCK, STRN 0.3VDD V
Terminal RESETN 0.25VDD V
Input High Voltage VIH 0.7VDD V
Input Hysteresis VIhys
Terminals PWM, SDI, SCK, STRN 150 550 mV
Terminal RESETN 150 370 mV
Input Pull-Down Resistor RPD
Terminals PWM, SDI, SCK 30 50 70
Terminal RESETN 45 80 110
Input Pull-Up Resistor RPU Terminal STRN 30 50 70
Output Low Voltage VOL IOL = 1 mA 0.2 0.4 V
Output High Voltage2VOH IOL = –1 mA VDD – 0.4 VDD – 0.2 V
Output Leakage (SDO)2IO0 V < VO < VDD, STRN = 1 –1 1 µA
Logic Inputs and Outputs – Dynamic Parameters
RESETN Pulse Width tRES 0.2 4.5 µs
RESETN Shutdown Width tRSD 10 µs
Input Pulse Filter Time (PWM) tPIN 35 ns
PWM Brake Time tBRK 500 µs
Clock High Time tSCKH A in figure 1 50 ns
Clock Low Time tSCKL B in figure 1 50 ns
Strobe Lead Time tSTLD C in figure 1 30 ns
Strobe Lag Time tSTLG D in figure 1 30 ns
Strobe High Time tSTRH E in figure 1 300 ns
Data Out Enable Time tSDOE F in figure 1 40 ns
Data Out Disable Time tSDOD G in figure 1 30 ns
Data Out Valid Time from Clock Falling
tSDOV H in figure 1 40 ns
Data Out Hold Time from Clock Falling tSDOH I in figure 1 5 ns
Continued on the next page…
ELECTRICAL CHARACTERISTICS (continued) Valid at TJ = –40°C to 150°C, VDD = 5 V, VBB = 7 to 28 V;
unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
Automotive, Sensorless BLDC Controller
A4960
8
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Logic I/O – Dynamic Parameters (continued)
Data In Set-up Time to Clock Rising tSDIS J in figure 1 15 ns
Data In Hold Time from Clock Rising tSDIH K in figure 1 10 ns
Wake Up from Sleep Mode tEN RESETN rising to undervoltage faults cleared 2 ms
Motor Start-up Parameters
Hold Torque Internal Reference VHQ Default power–up level: IDS = 0 33.7 37.5 41.3 %VREF
Hold Torque Duty Cycle DHQ Default power–up level: IDS = 1 33.7 37.5 41.3 %
Hold Time tHOLD Default power–up level 28.9 34.0 39.1 ms
Start Commutation Time tCOMS Default power–up level 34 40 46 ms
End Commutation Time tCOME Default power–up level 2.72 3.20 3.68 ms
Ramp Torque Internal Reference VRQ Default power–up level: IDS = 0 50.6 56.25 61.9 %VREF
Ramp Torque Duty Cycle DRQ Default power–up level: IDS = 1 50.6 56.25 61.9 %
Ramp Rate (Change in commutation
time) ΔtCOM RR[3:0] = 1001 1.7 2.0 2.3 ms
Motor Run Parameters
Phase Advance θADV
Denominated in electrical degrees,
PA[3:0] = 1000 12 15 18 deg
BEMF Hysteresis – High VBHYSH 240 mV
BEMF Hysteresis – Low VBHYSL 60 mV
BEMF Window Time tBW Default power–up level 5.4 6.4 7.4 µs
Commutation Blank Time tCB Default power–up level 42.5 50 57.5 µs
Protection
VREG Undervoltage Threshold VREGUVON VREG rising 7.5 8 8.5 V
VREGUVOFF VREG falling 6.6 7.1 7.6 V
Bootstrap Undervoltage VBOOTUV VBOOT falling, VCx – VSx 58 71 %VREG
Bootstrap Undervoltage Hysteresis VBOOTUVHys 13 %VREG
VDD Undervoltage Threshold VDDUV VDD falling 2.45 2.7 2.85 V
VDD Undervoltage Hysteresis VDDUVHys 50 100 150 mV
Drain-Source Threshold Voltage VDSTH Default power–up level 720 800 880 mV
VBRG Input Voltage VBRG When VDS monitor is active VBB – 1 VBB VBB + 1 V
VBRG Input Current IVBRG VDSTH = default, VBB = 12 V, 0 V < VBRG < VBB 250 µA
Short-to-Ground Threshold Offset4VSTGO
High side on, VDSTH≥1V ±100 mV
High side on, VDSTH < 1 V –150 ±50 +150 mV
Short-to-Battery Threshold Offset5VSTBO
Low side on, VDSTH≥1V ±100 mV
Low side on, VDSTH < 1 V –150 ±50 +150 mV
ELECTRICAL CHARACTERISTICS (continued) Valid at TJ = –40°C to 150°C, VDD = 5 V, VBB = 7 to 28 V;
unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
Continued on the next page…
Automotive, Sensorless BLDC Controller
A4960
9
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
ELECTRICAL CHARACTERISTICS (continued) Valid at TJ = –40°C to 150°C, VDD = 5 V, VBB = 7 to 28 V;
unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
Protection (continued)
DIAG Output Clock Division Ratio NDDGx = 01 400
DIAG Output VDS Threshold Error EVTHD DGx = 10 –10 10 mV
Temperature Warning Threshold TJW Temperature increasing 125 135 145 ºC
Temperature Warning Hysteresis TJWHys 15 ºC
Overtemperature Threshold TJF Temperature increasing 155 170 ºC
Overtemperature Hysteresis TJFHys Recovery = TJF – TJHys 15 ºC
1Function is correct but parameters are not guaranteed above or below the general limits (7 to 28 V).
2For input and output current specifications, negative current is defined as coming out of (sourcing) the specified device terminal.
3Current Trip Point Error is the difference between the actual current trip point and the target current trip point, referred to maximum full scale (100%)
current: EITRIP = 100 × (ITRIP(Actual) – ITRIP(Target)) / IFullScale (%) .
4As VSx decreases, a fault occurs if VBAT – VSx > VSTG . STG threshold, VSTG = VDTSTH + VSTGOFF
.
5As VSx increases, a fault occurs if VSx – VLSS > VSTB . STB threshold, VSTB = VDTSTH + VSTBOFF .
Automotive, Sensorless BLDC Controller
A4960
10
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
XXX X X
C A B D E
J K
FI G
0D41D 51D
0D41D 51D
STRN
SC
K
SDI
SDO
H
X=don’t care, Z=high impedance (tri-state)
Z Z
Figure 1. Serial Interface Timing (letters A through K are referenced in the Electrical Characteristics table, Logic
Inputs and Outputs – Dynamic Parameters section)
Figure 4. VDS Fault Blanking
Figure 2. Gate Drive Output Timing – PWM Input Figure 3. PWM Brake Timing
PWM
GLx
GHx
tDEAD
tDEAD
tP(off)
tP(off)
PWM
tBRK
Run PWM Off Brake
GHx
HS VDS Monitor Action
LS VDS Monitor Action
GLx
tDEAD tBL
tDEAD
tP(off)
tBL
tP(off)
PWM
Disabled
Disabled ActiveActive
Disabled Active
Operation Timing Diagrams
Automotive, Sensorless BLDC Controller
A4960
11
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Phase
TACHO
Phase
TACHO
tCB tCB
Figure 5. Commutation Blank Time
Figure 7. BEMF Hysteresis – Falling Phase Voltage Figure 8. BEMF Hysteresis – Rising Phase Voltage
Figure 6. BEMF Window
Internal o
r
External
PWM
tBW
BEMF BEMF BEMF BEMF
ignored
tBW
ignored monitored monitored
Phase
Voltage
Phase
TACHO
Normal Zero-Crossing
High hysteresis
VBHYSH
VBHYSL
with low hysteresis
with high hysteresis
Low hysteresis
No hysteresis
TACHO
when
Phase
TACHO
VBHYSH
VBHYSL
Normal Zero-Crossing
High hysteresis
with low hysteresis
with high hysteresis
Low hysteresis
No hysteresis
TACHO
when
Automotive, Sensorless BLDC Controller
A4960
12
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Functional Description
The A4960 is a three-phase, sensorless, brushless DC (BLDC)
motor controller for use with external N-channel power
MOSFETs and is specifically designed for automotive applica-
tions. The motor is driven using block commutation (trapezoidal
drive), where phase commutation is determined by a proprietary,
motor back-EMF (BEMF) sensing technique. The motor BEMF
is sensed to determine the rotor position without any requirement
for independent position sensors.
Motor current is provided by six external N-channel power
MOSFETs arranged as a three-phase bridge. The A4960 provides
six high current gate drives, three high-side and three low-side,
capable of driving a wide range of MOSFETs. It includes all the
necessary circuits to ensure that the gate-source voltage of both
high-side and low-side MOSFETs are above 10 V at motor sup-
ply voltages down to 7 V.
An integrated start-up scheme can be configured with program-
mable parameters through a serial interface allowing the A4960
to be adjusted for a wide range of motor and load combinations.
The serial interface also provides the ability to program various
gate drive and diagnostic parameters.
Integrated diagnostics provide indication of undervoltage, over-
temperature, and power bridge faults. They can be configured to
protect the power MOSFETs under most short circuit conditions.
Detailed diagnostic information is available through the serial
interface.
Specific functions are described more fully in following sections.
Input and Output Terminal Functions
VBB Main power supply for internal regulators and charge pump.
The main power supply should be connected to VBB through a
reverse voltage protection circuit and should be decoupled with
ceramic capacitors connected close to the supply and ground
terminals.
VDD Logic supply. Compatible with 3.3 V and 5 V logic. This
should be decoupled to ground with a 100 nF capacitor.
CP1, CP2 Pump capacitor connections for charge pump. Connect
a 220 nF ceramic capacitor between CP1 and CP2.
VREG Regulated voltage, nominally 13 V, used to supply the low
side gate drivers and to charge the bootstrap capacitors. A suffi-
ciently large storage capacitor must be connected to this terminal
to provide the transient charging current.
REF Voltage reference input to internal reference DAC. Connect
to VDD to use the internal 2 V reference.
GND Analog reference, digital and power ground. Connect to
supply ground.
VBRG Sense input to the top of the external MOSFET bridge.
Allows accurate measurement of the voltage at the drain of the
high-side MOSFETs.
CA, CB, CC High-side connections for the bootstrap capacitors
and positive supply for high-side gate drivers.
GHA, GHB, GHC High-side, gate-drive outputs for external
N-channel MOSFETs.
SA, SB, SC Motor phase connections. These terminals sense the
voltages switched across the load. They are also connected to the
negative side of the bootstrap capacitors and are the negative sup-
ply connections for the floating high-side drivers.
GLA, GLB, GLC Low-side, gate-drive outputs for external
N-channel MOSFETs.
LSS Low-side return path for discharge of the capacitance on the
MOSFET gates, connected to the common sources of the low-
side external MOSFETs through a low impedance track.
CSP, CSM Current sense amplifier inputs. Connect directly to
each end of the sense resistor using separate PCB traces.
PWM PWM input to control high-side switching. When pulsed
low, this turns off any active high-side drivers and turns on the
complementary low-side drivers. When held low for longer than
the PWM brake time, this turns off all high-side drivers and turns
on all low-side drivers, when RUN (bit 0 in the Run register) is
set to 1.
RESETN Resets faults when pulsed low. Forces low-power
shutdown (sleep mode) when held low for more than the reset
shutdown width, tRSD. Can be pulled to VBB with 22 kΩ resistor.
SDI Serial data input. 16-bit serial word input, MSB first.
SDO Serial data output. High impedance when STRN is high.
Outputs FF (bit 15 of the Diagnostic register), the Fault flag, as
soon as STRN goes low.
Automotive, Sensorless BLDC Controller
A4960
13
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
SCK Serial clock. Data is latched in from SDI on the rising edge
of SCK. There must be 16 rising edges per write and SCK must
be held high when STRN changes.
STRN Serial data strobe and serial access enable. When STRN
is high any activity on SCK or SDI is ignored, and SDO is high
impedance allowing multiple SDI slaves to have common SDI,
SCK, and SDO connections.
DIAG Diagnostic output. Programmable output to provide four
alternative functions: Fault output flag (default), Sensorless
Operation Indicator, internal timer, and VDS threshold.
TACHO Motor speed output. Provides a pulse signal with a
frequency proportional to the motor speed. TACHO remains low
until the first BEMF zero-crossing is detected.
Motor Drive System
The motor drive system consists of three half bridge gate drive
outputs, each driving one leg of an external 3-phase MOSFET
power bridge. The state of the gate drive outputs is determined
by a state sequencer with six possible states. These states are
shown in table 1 and change in a set sequence depending on the
required direction of rotation. For the A4960, forward is defined
as the state sequence shown in table 1, DIR (Run bit 1) set to 0,
incrementing in steps of one from 1 to 6, then repeating from 1.
Reverse (DIR set to 1) is decrementing in steps of one from 6 to
1, then repeating from 6. The effect of these states on the motor
phase voltage is illustrated in figure 11. The point at which the
state of the gate outputs changes is defined as the commutation
point and must occur each time the magnetic poles of the rotor
reach a specific point in relation to the poles of the stator. This
point is determined by a complete self contained BEMF sensing
scheme with an adaptive commutation timer.
Rotor position sensing using motor BEMF
Determining the rotor position using BEMF sensing relies on
the accurate comparison of the voltage on the undriven (tri-state)
motor phase (indicated by Z in table 1) to the voltage at the
centertap of the motor, approximated using a reference voltage at
half the supply voltage. The BEMF zero crossing, the point where
the tri-stated motor winding voltage crosses the reference voltage,
is used as a positional reference. When the motor is running at a
constant speed, this zero crossing occurs approximately halfway
through one commutation cycle. Adaptive commutation circuitry
and programmable timers then determine the optimal commuta-
tion points.
Zero crossings are indicated by the output at the TACHO termi-
nal, which goes high at each valid zero crossing and low at the
next commutation point, as shown in figure 9. In each state, the
BEMF detector looks for the first correct polarity (low-to-high
Table 1. Control and Phase Sequence Table
Control Bits State Motor Phase Gate Drive Outputs Mode
RUN BRK DIR = 1 DIR = 0 SA SB SC GHA GLA GHB GLB GHC GLC
1 0 1 HI Z LO HI LO LO LO LO HI
Run
1 0 2 Z HI LO LO LO HI LO LO HI
1 0 3 LO HI Z LO HI HI LO LO LO
1 0 4 LO Z HI LO HI LO LO HI LO
1 0 5 Z LO HI LO LO LO HI HI LO
1 0 6 HI LO Z HI LO LO HI LO LO
0 x x x x Z Z Z LO LO LO LO LO LO Coast
1 1 x x x LO LO LO LO HI LO HI LO HI Brake
x: don’t care; HI: high-side MOSFET active; LO: low-side MOSFET active; Z: high impedance, both MOSFETs off
2
3
4
5
6
1
2
3
4
5
6
1
SA
SB
SC
TACHO
State
Figure 9. Motor phase state sequence, DIR = 0
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or high-to-low) zero crossing and latches it until the next state
change. This latching action, combined with precise comparator
hysteresis, provides a robust sensing system.
There are three variables that effect the BEMF sensing, these are:
• Commutation Blank Time, tCB
• BEMF Hysteresis, VBHYS
• BEMF Window, tBW
Commutation Blank Time
The BEMF detectors are inhibited for tCB following a commuta-
tion event. This prevents any commutation transients and winding
demagnetization periods from disturbing the BEMF sensing
system. The commutation blank time is shown in figure 5 and is
selected by CB[1:0] (Config0 bits 11:10 ).
BEMF Window
The BEMF window is the length of time after any PWM change,
low-to-high or high-to-low, during which the phase voltage and
the output of the BEMF comparator is ignored, as shown in
figure 6. It is selected using BW[2:0] (Run bits 9:7). The BEMF
window is effectively the BEMF comparator blank time.
If the PWM-on time is less than the BEMF window, then the
phase voltage is ignored for the whole PWM-on time. If the
PWM-off time is less than the BEMF window, then the phase
voltage is ignored for the whole PWM-off time.
BEMF Hysteresis
The BEMF hysteresis is the amount by which the BEMF voltage,
measured on the undriven phase, must exceed the normal zero-
crossing value before zero crossing is detected and TACHO goes
high. This is illustrated in figures 7 and 8.
If the BEMF is falling, then the zero crossing will be detected
when the BEMF voltage is lower than the normal zero-crossing
value minus the BEMF hysteresis (figure 7).
If the BEMF is rising, then the zero crossing will be detected
when the BEMF voltage is higher than the normal zero-crossing
value plus BEMF hysteresis (figure 8).
The BEMF hysteresis is selected using BH[1:0] (Run bits
11:10). It can be set to zero, low (typically 60 mV), high (typi-
cally 240 mV) or Auto. Auto sets the hysteresis to the high level
during start-up and reduces it to the low level during running.
This provides added security during start-up in achieving a stable
BEMF detection but permits the motor to run slower or at a lower
voltage when BEMF detection is achieved.
Start-up
In order to correctly detect the zero crossing, the changing motor
BEMF on any phase must be detectable when that phase is not
being driven. When the motor is running at a relatively constant
speed, this is ensured by the adaptive commutation scheme used.
However, during start-up, particularly when the motor load has a
high friction component, the motor must be accelerated from rest
in such a way that the BEMF zero crossing can be detected. Ini-
tially, as the motor is started, there is no rotor position informa-
tion from the BEMF sensor circuits and the motor must be driven
in an open loop 3-phase stepper mode. Unlike a true stepper
motor, which is designed for open loop operation, most 3-phase
BLDC motors are unstable when driven in this way and will
overshoot the intended step point by a large margin. To overcome
this limitation the motor must be accelerated such that the motor
movement and the phase step sequence can synchronize to allow
correct BEMF zero crossing detection.
The initial start speed, the acceleration rate, and the accelerat-
ing torque must be adjusted for each combination of motor and
mechanical load. These parameters can be programmed in the
A4960 through the serial interface. Configuration registers Con-
fig4 and Config5 provide the following programmable param-
eters:
• Config4 bits SC[3:0] – set the start of ramp speed
• Config4 bits EC[3:0] – set the end of ramp speed
• Config5 bits RR[3:0] – set the ramp rate
• Config5 bits RQ[3:0] – set the acceleration torque
To ensure that the motor start-up and sensorless BEMF capture
is consistent, the start sequencer always forces the motor to a
known start position. The time during which the motor is forced
into the start position can be programmed through the serial inter-
face using the four hold time bits, HT[3:0] (Config3 bits 3:0).
The torque applied during this hold time is programmed using
the four hold torque bits, HQ[3:0], (Config3 bits 7:4). These two
variables allow a stable start condition to be achieved for differ-
ent motor and attached mechanical loads.
As soon as a valid BEMF zero crossing is detected during the
start sequence, the A4960 will transition to full BEMF commuta-
tion and the start sequencer will be reset. The TACHO output
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will remain low until the first BEMF zero crossing is detected.
TACHO will then go high at each BEMF zero crossing and will
go low at each commutation point. Sensorless operation is also
indicated by a zero in LOS (Diagnostic bit 9), and by a high level
when the Sensorless Operation Indicator option is selected on the
DIAG pin output.
If sensorless operation cannot be achieved by the end of the
acceleration ramp, then the sequencer will reset and retry if RSC
(Run bit 3) is set to 1. This will continue until stopped by pulling
PWM or RESETN low, or by control via the serial interface. If
RSC is set to 0, then the retry will not take place, and the outputs
will remain off and the LOS bit will be set.
Motor control
The running state, direction, and speed of the motor are con-
trolled by a combination of commands through the serial inter-
face and by signals on specific terminals (see Applications
Information section). The serial interface provides three control
bits: RUN, DIR, and BRK (Run bits 2:0).
When RUN is set to 1, the A4960 is allowed to run the motor or
to commence the start-up sequence. When RUN is set to 0 all
gate drive outputs go low, no commutation takes place, and the
motor is allowed to coast. Setting RUN to 0 overrides all other
control inputs.
The DIR bit determines the direction of rotation. Forward is
defined as the state sequence shown in table 1, DIR (Run bit 1)
set to 0, incrementing in steps of one from 1 to 6, then repeating
from 1. Reverse (DIR set to 1) is decrementing in steps of one
from 6 to 1, then repeating from 6.
The BRK bit can be set to apply an electrodynamic brake which
will decelerate a rotating motor. It also can provide some holding
torque for a stationary motor. When RUN and BRK are both set
to 1, all low-side MOSFETs will be turned on and all high-side
MOSFETs turned off, effectively applying a short between the
motor windings. This allows the reverse voltage generated by
the rotation of the motor (motor BEMF) to set up a current in the
motor phase windings that will produce a braking torque. This
braking torque will always oppose the direction of rotation of the
motor. The strength of the braking or holding torque will depend
on the motor parameters. No commutation takes place during
braking and no current control is available. Care must be taken to
ensure that the braking current does not exceed the capability of
the low-side MOSFETs.
When RUN is set to 1, automatically LOS (Diagnostic bit 9)
is set to 1 and the Sensorless Operation Indicator option on the
DIAG pin output, if selected, is set low until sensorless operation
is achieved. When RUN is set to 0, or BRK is set to 1, the LOS
bit and the Sensorless Operation Indicator are inactive (LOS set
to 0 and DIAG set high).
When the motor is running, the motor speed can be varied by
applying a variable duty cycle input to the PWM terminal. The
motor speed will be proportional to the duty cycle of this signal
but will also vary with the mechanical load and the supply volt-
age. Precise speed control requires an external control loop which
can use the PWM input to vary the motor speed within the overall
closed loop speed controller. The motor speed can be determined
by monitoring the TACHO output. When the A4960 is running
with sensorless commutation, the TACHO output provides a
square wave output with a frequency proportional to the motor
speed.
The PWM input can be driven from 3.3 V or 5 V logic, and
has hysteresis and a filter to improve noise performance. When
pulsed low, any active high-side drivers will be turned off and the
complementary low-side drivers will be turned on. This provides
high-side chopped, slow-decay PWM with synchronous rectifica-
tion.
Holding the PWM input low for longer than the PWM brake
time, tBRK , will force a brake condition in the same way as the
BRK bit in the Run register. The brake will only be active when
RUN is set to 1.
Except for the PWM brake function, the PWM input will be
ignored during start-up, until sensorless commutation is achieved.
It also will also be ignored when BRK is set to 1.
Phase advance
In some motor control systems, improved motor performance can
be achieved by starting to energize the phase windings in advance
of the timing defined by the rotor position. This ensures that the
phase windings have reached the required current level at the
point where the resulting forward torque on the rotor will be most
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A4960
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effective. It also ensures that the current in the phase windings
will start to decay in time to ensure that the torque produced by
the decaying phase current will not cause any rotor drag. If cor-
rectly set up, phase advance can result in greater motor efficiency.
In motors that use Hall sensors or rotary decoders this can be
achieved by a mechanical offset in the sensor position. However
this is only valid for one direction of rotation.
The A4960 overcomes this mechanical limitation by providing a
programmable electronic method of setting the phase advance in
either direction of rotation. The PA[3:0] (Config5 bits 11:8 ) set-
ting provides phase advance in electrical commutation angle from
0° to 28° in steps of 1.9°. This is equivalent to a phase advance up
to almost half of the commutation period on any one phase. The
phase advance is automatically always in relation to the motor
direction. There is no need to change the value with a direction
change.
Power Supplies
Two power supply voltages are required, one for the logic inter-
face and control, and another one for the analog and output drive
sections. The logic supply, connected to VDD, is a 5 V nominal
supply, but the TTL threshold logic inputs allow the inputs to be
driven from a 3.3 V or 5 V logic interface.
The normal operating voltage range of the A4960, where the
electrical parameters are fully defined, is 7 to 28 V. However, it
is designed to function correctly up to 50 V during load dump
conditions, and will maintain full operation down to 6 V. Below
7 V and above 28 V some parameters may exceed the limits
specified for the normal supply voltage range. The A4960 will
function correctly with a VBB supply down to 5.5 V. However,
full sensorless start-up and commutation may not be possible.
This provides a very rugged solution for use in the harsh automo-
tive environment.
The main power supply should be connected to VBB through
a reverse voltage protection circuit. Both supplies should be
decoupled with ceramic capacitors connected close to the supply
and ground terminals.
Gate Drives
The A4960 is designed to drive external, low on-resistance,
power N-channel MOSFETs. It supplies the large transient
currents necessary to quickly charge and discharge the external
MOSFET gate capacitance in order to reduce dissipation in the
MOSFET during switching. The charge current for the high-side
drives is provided by the bootstrap capacitors connected between
the Cx and Sx terminals, one for each phase. The charge and dis-
charge rate can be controlled using an external resistor in series
with the connection to the gate of the MOSFET.
Gate drive voltage regulation
The gate drives are powered by an internal regulator which limits
the supply to the drives and therefore the maximum gate voltage.
When the VBB supply is greater than approximately 16 V, the
regulator is a simple linear regulator. Below 16 V, the regulated
supply is maintained by a charge pump boost converter, which
requires a pump capacitor connected between the CP1 and CP2
pins. This capacitor must have a minimum value of 220 nF, and is
typically 470 nF.
The regulated voltage, nominally 13 V, is available on the VREG
pin. A sufficiently large storage capacitor must be connected to
this pin to provide the transient charging current to the low-side
drives and the bootstrap capacitors.
Bootstrap charge management
The A4960 monitors the individual bootstrap capacitor charge
voltages to ensure sufficient high-side drive. Before a high-side
drive can be turned on, the bootstrap capacitor voltage must be
higher than the turn-on voltage limit. If this is not the case, then
the A4960 will attempt to charge the bootstrap capacitor by acti-
vating the complementary low-side drive. Under normal circum-
stances this will charge the capacitor above the turn-on voltage in
a few microseconds and the high-side drive will then be enabled.
The bootstrap voltage monitor remains active while the high-side
drive is active, and if the voltage drops below the turn-off volt-
age, a charge cycle is initiated also.
The bootstrap charge management circuit may actively charge the
bootstrap capacitor regularly when the PWM duty cycle is very
high, particularly when the PWM off-time is too short to permit
the bootstrap capacitor to become sufficiently charged. If, for any
reason, the bootstrap capacitor cannot be sufficiently charged a
bootstrap fault will occur. See the Diagnostics section for further
details.
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Low-side gate drive
The low-side gate drive outputs GLA, GLB, and GLC are refer-
enced to the LSS terminal. These outputs are designed to drive
external N-channel power MOSFETs. External resistors between
each gate drive output and the gate connection to the respective
MOSFET (as close as possible to the MOSFET) can be used to
control the slew rate seen at the gate, thereby providing some
control of the di/dt and dv/dt of the voltage at the SA, SB, and SC
terminals. When GLx is set high, the upper half of the driver is
turned on and the drain sources current to the gate of the respec-
tive low-side MOSFET in the external power bridge, turning on
the MOSFET. When GLx is set low, the lower half of the driver is
turned on and the drain sinks current from the external MOSFET
gate circuit to the LSS terminal, turning off the MOSFET. LSS is
the low-side return path for discharge of the capacitance on the
MOSFET gates. It should be connected to the common sources of
the low-side external MOSFETs through a low-impedance circuit
board trace.
High-side gate drive
The high-side gate drive outputs GHA, GHB and GHC are ref-
erenced to the SA, SB, and SC pins respectively. These outputs
are designed to drive external N-channel power MOSFETs.
External resistors between each gate drive output and the gate
connection to the respective MOSFET (as close as possible to the
MOSFET) can be used to control the slew rate seen at the gate,
thereby controlling the di/dt and dv/dt of the voltage at the SA,
SB, and SC terminals. When GHx is set high, the upper half of
the driver is turned on and the drain sources current to the gate of
the respective high-side MOSFET in the external motor-driving
bridge, turning on the MOSFET. When GHx is set low, the lower
half of the driver is turned on and the drain sinks current from the
external MOSFET gate circuit to the respective Sx terminal, turn-
ing off the MOSFET.
The CA, CB, and CC pins are the positive supplies for the float-
ing high-side gate drives. The bootstrap capacitors are connected
between the Cx and Sx terminals of the same phase. The boot-
strap capacitors are charged to approximately VREG when the
associated output Sx terminal is low. When the Sx output swings
high, the charge on the bootstrap capacitor causes the voltage at
the corresponding Cx terminal to rise with the output to provide
the boosted gate voltage needed for the high-side MOSFETs.
The SA, SB, and SC terminals are connected directly to the motor
phase connections. These terminals sense the voltages switched
across the load. They are also connected to the negative side of
the bootstrap capacitors and are the negative supply connections
for the floating high-side drives. The discharge current from the
high-side MOSFET gate capacitance flows through these con-
nections which should have low impedance circuit board traces
to the MOSFET bridge. These terminals also provide the phase
voltage feedback to used to determine the rotor position.
Dead Time
To prevent cross conduction (shoot through) in any phase of the
power MOSFET bridge, it is necessary to have a dead-time delay
between a high- or low-side turn-off and the next complementary
turn-on event. The potential for cross conduction occurs when
any complementary high-side and low-side pair of MOSFETs
are switched at the same time, for example, at the PWM
switchpoints. In the A4960, the dead time for all three phases is
set by the contents of DT[5:0] (Config0 bits 5:0 ). These six bits
contain a positive integer that determines the dead time by divi-
sion from the system clock.
The dead time is defined as:
tDEAD = n × 50 ns (1)
where n is a positive integer defined by DT[5:0] and tDEAD has a
minimum programmable value of 100 ns.
For example, when DT[5:0] contains 011000 (24 in decimal),
then tDEAD = 1.2 µs (typical).
The accuracy of tDEAD is determined by the accuracy of the
system clock, as defined in the Electrical Characteristics table,
tOSC . A DT[5:0] value of 000000, 000001, or 000010 (0, 1, or 2
in decimal) sets the minimum programmable tDEAD of 100 ns.
Sleep Mode and RESETN
RESETN is an active-low input which allows the A4960 to enter
sleep mode, in which the current consumption from the VBB and
VDD supplies is reduced to its minimum level. When RESETN
is held low for longer than the reset pulse time, tRES , the inter-
nal pump regulator and all internal circuitry is disabled and the
A4960 enters sleep mode. In sleep mode the latched faults and
corresponding fault flags are cleared.
When coming out of sleep mode, the protection logic ensures
that the gate drive outputs are off until the charge pump reaches
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its correct operating condition. The charge pump will stabilize in
approximately 3 ms under typical conditions. To allow the A4960
to start-up without requiring external logic input, the RESETN
terminal can be pulled to VBB with an external pull-up resistor.
The resistor value should be between 20 and 33 kΩ.
RESETN can also be used to clear any fault conditions without
entering sleep mode by taking it low for the reset pulse time,
tRES . Latched short fault conditions, which disable the outputs,
will be cleared as will the serial fault register.
Current Limit
An integrated fixed off-time PWM current control circuit is
provided to limit the motor current during periods when the
torque demand exceeds the normal operating range. It is also
available at start-up to set the hold torque and the ramp torque
if IDS (Config3 bit 8) is set to 0. The fixed off-time is program-
mable through the serial interface and the current limit is set by
an external sense resistor and a programmable reference voltage
derived from the voltage at the REF input. During normal run-
ning, the internal current control can be used in conjunction with
any external PWM control on the PWM input by ensuring that
the programmable off-time of the internal control circuit is longer
than the maximum off-time of the external PWM signal.
During the start-up sequence, the PWM input is ignored, unless
it is held low in the brake condition. If IDS is set to 0, the current
limit circuit provides full control over the hold torque and accel-
eration torque.
Current sense amplifier
A differential sense amplifier with a gain of 10 is provided to
allow the use of low-value sense resistors or a current shunt as
the current sensing element.
The output of the sense amplifier is compared to an internally
generated reference voltage, VRI , the value of which is pro-
grammed through the serial interface as a ratio of the voltage,
VREF , at the reference input terminal, REF. When the REF ter-
minal is connected to VDD, VREF is then limited to the reference
clamp voltage, VREFC
.
VRI can have a value between 6.25%VREF and 100%VREF
defined as:
VRI = [(n + 1) × 6.25%] × VREF (2)
where n is a positive integer defined by VR[3:0] (Config1 bits
9:6).
For example, when VR[3:0] contains 1100 (12 in decimal), then
VRI = 81.25%VREF .
VRI is generated by a digital-to-analog converter (DAC) with
VREF as the reference input to the DAC. VRI will therefore scale
directly with VREF
.
With the PWM input high, or during start-up when PWM is
ignored, when the outputs of the MOSFETs are turned on, current
increases in the motor winding until it reaches a value given by
approximately:
ITRIP AV × RSENSE
VRI
(3)
where
VRI is defined as above,
A
V is the gain of the sense amplifier, typically 10, and
RSENSE is the value of the sense resistor.
At the trip point, the sense comparator switches off any active
high-side MOSFETs and switches on the complementary low-
side MOSFETs. This makes the bridge switch from a drive
configuration, where the current is forced to increase, into a recir-
culation configuration, where the motor inductance causes the
current to recirculate for a fixed duration defined as the off-time.
During this off-time the current will decay at a rate defined by
the motor inductance and the impedance of the MOSFET bridge.
This is classic slow decay PWM current control.
Fixed off-time
The duration of the fixed off-time is set by the contents of
PT[4:0] (Config2 bits 4:0). These five bits contain a positive
integer that determines the off-time derived by division from the
system clock.
The off-time is defined as:
tOFF = 10 µs + (n × 1.6 µs) (4)
where n is a positive integer defined by PT[4:0].
For example, when PT[4:0] contains 11010 (26 in decimal), then
tOFF = 51.6 µs typically.
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The accuracy of tOFF is determined by the accuracy of the system
clock, tOSC , as defined in the Electrical Characteristics table. A
value of 00000 in PT[4:0] sets the minimum off-time of 10 µs.
Blank time
When the bridge is switched into the drive configuration, a
current spike occurs due to the reverse-recovery currents of
the clamp diodes and switching transients related to distributed
capacitance in the load. To prevent this current spike from being
detected as a current limit trip, the current-control compara-
tor output is blanked for a short period of time when the source
driver is turned on. The length of the blanking time is set by the
contents of BT[3:0] (Config0 bits 9:6). These four bits contain a
positive integer that determines the blank time derived by divi-
sion from the system clock.
The blank time is defined as:
tBL = n × 400 ns (5)
where n is a positive integer defined by BT[3:0].
For example, when BT[3:0] contains 1011 (11 in decimal), then
tBL = 4.4 µs typically.
The accuracy of tBL is determined by the accuracy of the system
clock, tOSC , as defined in the Electrical Characteristics table.
The blank time is also used with the MOSFET drain-source
monitors, which are used to determine MOSFET short faults.
The blank time is used in these circuits, as shown in figure 4, to
mask the effect of any voltage or current transients caused by any
PWM switching action.
The user must ensure that blank time is long enough to mask any
current transient seen by the internal sense amplifier and mask
any voltage transients seen by the drain-source monitors.
Diagnostics
Several diagnostic features are integrated into the A4960 to
provide indication of fault conditions. In addition to system-wide
faults such as undervoltage and overtemperature, the A4960
integrates individual drain-source monitors for each external
MOSFET, to provide short circuit detection.
The fault status is available from two sources, the DIAG output
terminal and the serial interface.
DIAG pin
The DIAG terminal is a diagnostic output that can be pro-
grammed through the serial interface DG[1:0](Run bits 5:4) to
provide any one of four alternative dedicated diagnostic signals:
• the general fault output flag
• the Sensorless Operation Indicator
• the programmed VDS threshold voltage
• a clock signal derived from the internal chip clock
After a power-on reset the DIAG output defaults to the fault out-
put flag. The general logic-level fault output flag outputs a low
on the DIAG pin to indicate a fault is present. This fault output
flag remains low while an unlatched fault is present or if one of
the latched faults has been detected and the outputs are disabled.
(Note there also is a common Fault flag, described in the Serial
fault output section.)
The Sensorless Operation Indicator is a logic level signal that is
set high when the A4960 has achieved sensorless commutation.
The Sensorless Operation Indicator is set low before sensorless
operation is achieved at start-up, or if sensorless operation is lost
while the motor should be operating. This indicator is held high
even when the motor is stopped, by setting RUN (Run bit 0) to 0
or BRK (Run bit 2) to 1.
The VDS threshold output provides access to the internal thresh-
old voltage to allow more precise calibration of the MOSFET
fault monitor threshold if required.
The clock output provides a logic-level square wave output to
allow more precise calibration of the timing settings if required.
Serial interface fault output
The serial interface allows detailed diagnostic information to be
read from the Diagnostic register at any time.
The first bit (bit 15) of the Diagnostic register contains the com-
mon Fault flag, FF, which is set high when any of the fault bits in
the Diagnostic register have been set. This allows fault conditions
to be detected using the serial interface by simply taking STRN
low. As soon as STRN goes low the fist bit in the Diagnostic
register can be read to determine if a fault has been detected at
any time since the last Diagnostic register reset. In all cases the
fault bits in the Diagnostic register are latched and only cleared
after a Diagnostic register reset (see Diagnostic Register section
on serial access).
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Note that FF does not provide the same function as the general
fault output flag output on the DIAG pin (described above). The
fault output on the DIAG pin provides an indication that certain
types of faults are present and in some cases that the outputs have
been disabled. FF provides an indication that certain types of
faults have occurred since the last Diagnostic register reset and
the respective fault bit has been set.
Fault response action
For certain fault conditions, the response of the A4960 is deter-
mined by the state of the Enable Stop on Fault bit, ESF (Run
bit 6), as shown in table 2. When a short fault or overtemperature
condition is detected, if ESF is set to 1 the A4960 disables all
the gate drive outputs and coasts the motor. For short faults, this
disabled state will be latched until RESETN goes low, a serial
interface read is completed, or a power-on reset occurs. For
undervoltage fault conditions, the outputs will always be dis-
abled, regardless of the ESF bit setting.
When ESF is set to 0, although the general fault output flag
(DIAG pin) is still activated (low), the A4960 will not disrupt
normal operation under most conditions, and will therefore not
protect the motor or the drive circuit from damage. It is impera-
tive that the application master control circuit or other external
circuit takes any necessary action when a fault occurs, to prevent
damage to components.
Fault Mask register
Certain individual diagnostics can be disabled by setting the cor-
responding bit in the Mask register. If a bit is set to 1 in the Mask
register, then the corresponding diagnostic will be completely
disabled. No fault states for the disabled diagnostic will be gener-
ated and neither the general fault output flag (DIAG pin) nor bits
in the Diagnostic register will be set.
The VDD Undervoltage and VREG Undervoltage faults can-
not be masked. VDD undervoltage detection cannot be disabled
because the diagnostics and the output control depend on VDD
to operate correctly. VREG undervoltage detection cannot be
disabled because it is safe to turn on the gate drive outputs only
when VREG is at a sufficiently high voltage.
Note: Care must be taken when diagnostics are disabled to avoid
potentially damaging conditions.
Chip-level diagnostics
Parameters critical for safe operation of the A4960 and the
external MOSFETs are monitored. These include: maximum
chip temperature, minimum logic supply voltage, and the vari-
ous minimum voltages required to drive the external MOSFETs
(VREG and each of the bootstrap voltages). Note that the main
supply voltage, VBB
, is not monitored for minimum voltage. This
is because the critical minimum voltages are generated by the
charge pumps internal to the A4960. When a fault is present, the
general fault output flag (DIAG pin) will be active (low).
Chip Fault States: Temperature Thresholds
Two temperature threshold actions are provided: a high tempera-
ture warning and an overtemperature shutdown.
• If the chip temperature rises above the Temperature Warning
Threshold, TJW , the general fault output flag (DIAG pin) goes
low and the High Temperature Warning bit, TW (Diagnostic
bit 11) and the common Fault flag bit, FF (bit 15), are set to 1. No
other action is taken by the A4960. When the temperature drops
below TJW by more than the hysteresis value, TJWHys
, the general
fault output flag (DIAG pin) goes high, but TW and FF remain
set in the Diagnostic register until a register reset.
• If the chip temperature rises above the Overtemperature Thresh-
old, TJF , the general fault output flag (DIAG pin) goes low and
the overtemperature bit, TS (Diagnostic bit 10) and the common
Fault flag bit, FF (bit 15), are set to 1. When ESF (Run bit 6) is
set to 1, if an overtemperature is detected, all gate drive outputs
will be disabled automatically. If an overtemperature condition
occurs when ESF is set to 0, then no circuitry will be disabled
and action must be taken by the user to limit the power dissipa-
Table 2: Fault Response Actions
Fault Description Disable Outputs Fault
Latched
ESF = 0 ESF = 1
No fault No No n.a.
VDD Undervoltage Yes* Yes* No
VREG Undervoltage Yes* Yes* No
Bootstrap Undervoltage Yes* Yes* Ye s
Temperature Warning No No No
Overtemperature No Yes* No
Short to Ground No Yes* Only
when
ESF = 1
Short to Supply No Yes*
Shorted Load No Yes*
* All gate drives low, all MOSFETs off
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tion in some way, so as to prevent overtemperature damage to the
chip and unpredictable device operation. When the temperature
drops below TJF by more than the hysteresis value, TJFHys
, the
general fault output flag (DIAG pin) goes high, but the overtem-
perature bit, TS, and FF remain set in the Diagnostic register until
cleared.
Chip Fault State : VREG Undervoltage
The internal charge-pump regulator supplies the low-side gate
driver and the bootstrap charge current. Before enabling any
of the outputs, it is critical to ensure that the regulated voltage,
VREG , at the VREG terminal is sufficiently high.
If VREG goes below the VREG Undervoltage Threshold,
VREGUVOFF
, the general fault output flag (DIAG pin) goes low
and the VREG undervoltage bit, VR (Diagnostic bit 13) and the
common Fault flag bit, FF (bit 15), are set to 1. All gate drive
outputs go low, the motor drive is disabled, and the motor coasts.
When VREG rises above VREGUVON, the gate drive outputs are re-
enabled and the general fault output flag (DIAG pin) goes high.
The fault bit, VR, and FF remain set in the Diagnostic register
until cleared.
The VREG undervoltage monitor circuit is active during power-
up. The general fault output flag (DIAG pin) is low and all gate
drives will be low until VREG is greater than approximately 8 V.
Note that this is sufficient to turn on standard-threshold, external
power MOSFETs at a battery voltage as low as 5.5 V, but the
on-resistance of the MOSFET may be higher than its specified
maximum.
Chip Fault State: VDD Undervoltage
The logic supply voltage, VDD , at the VDD terminal is monitored
to ensure correct logical operation. If VDD drops below the VDD
Undervoltage Threshold, VDDUV , then the logical function of
the A4960 cannot be guaranteed and the outputs will be imme-
diately disabled. The A4960 will enter a power-down state and
all internal activity, other than the VDD voltage monitor, will be
suspended.
When VDD rises above the rising undervoltage threshold, VDDUV
+ VDDUVHys
, the A4960 will perform a power-on reset. All serial
control registers will be reset to their power-on state, all fault
conditions and fault-specific bits in the Diagnostic register will be
reset, and the general fault output flag (DIAG pin) will go high.
The FF bit and the POR bit (Diagnostic bits 15 and 14) will be set
to 1 to indicate that a power-on reset has taken place.
The same power-on reset sequence occurs for initial power-on,
and also for a VDD “brown-out,” where VDD drops below VDDUV
only momentarily.
Bootstrap Undervoltage Fault State
In addition to a monitor on VREG , the A4960 also monitors the
individual bootstrap capacitor charge voltages to ensure sufficient
high-side drive. Before a high-side drive can be turned on, the
bootstrap capacitor voltage must be higher than the turn-on volt-
age limit, VBOOTUV + VBOOTUVHys
. If this is not the case, then the
A4960 will attempt to charge the bootstrap capacitor by activat-
ing the complementary low-side drive. Under normal circum-
stances this will charge the capacitor above the turn-on voltage in
a few microseconds and the high-side drive will then be enabled.
The bootstrap voltage monitor remains active while the high-
side drive is active, and if the voltage drops below the turn-off
voltage, VBOOTUV , a charge cycle is also initiated. In either case,
if there is a fault that prevents the bootstrap capacitor charg-
ing, then the charge cycle will time out, the general fault output
flag (DIAG pin) will go low, and the outputs will be disabled.
The appropriate bit (VA, VB, or VC, according to the phase) in
the Diagnostic register will be set to allow the faulty bootstrap
capacitor to be determined by reading the serial data word from
the Diagnostic register.
The bootstrap undervoltage fault state will be latched until
RESETN is set low, a serial interface read is completed, or a
power-on reset occurs due to a VDD undervoltage on the logic
supply.
MOSFET fault detection
Faults on external MOSFETs are determined by measuring the
drain-source voltage of the MOSFET and comparing it to the
Drain-Source Threshold Voltage, VDSTH , defined by VT[5:0]
(Config1 bits 5:0). These bits provide the input to a 6-bit DAC
with a least significant bit value of typically 25 mV. The output of
the DAC produces VDSTH , defined as approximately:
VDSTH ≈ n × 25 mV (6)
where n is a positive integer defined by VT[5:0].
For example, when VT[5:0] contains 101000 (40 in decimal),
then VDSTH = 1 V typically. The accuracy of VDSTH is defined in
the Electrical Characteristics table.
The low-side drain-source voltage for any MOSFET is mea-
sured between the LSS terminal and the appropriate Sx terminal.
Using the LSS terminal rather than the ground connection avoids
adding any low-side current sense voltage to the real low-side
drain-source voltage. The high-side drain-source voltage for
any MOSFET is measured between the VBRG terminal and the
appropriate Sx terminal. Using the VBRG terminal rather than the
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bridge supply avoids adding any high-side current sense voltage
to the real high-side drain-source voltage.
The VBRG terminal is a low-current sense input to the top of
the external MOSFET bridge. It should be connected directly to
the common connection point for the drains of the power bridge
MOSFETs at the positive supply connection point. The input
current to the VBRG terminal is proportional to the drain-source
threshold voltage, VDSTH
, and is approximately:
IVBRG = 72 × VVBRG + 52 (7)
where IVBRG is the current into the VBRG terminal in µA and
VDSTH is the Drain-Source Threshold Voltage, described above.
Note that the VBRG terminal can withstand a negative voltage
as great as –5 V. This allows the terminal to remain connected
directly to the top of the power bridge during negative transients
where the body diodes of the power MOSFETs are used to clamp
the negative transient. The same applies to the more extreme case
where the MOSFET body diodes are used to clamp a reverse bat-
tery connection.
MOSFET fault blank time
To avoid false MOSFET fault detection during switching tran-
sients the VDS-to-VDSTH comparison is delayed, following a
MOSFET turn-on, by the internal blank timer. This is the same
blank time as used for current sensing phase voltage monitoring.
The length of the blanking time is set by the contents of BT[3:0]
(Config0 bits 9:6 ). These four bits contain a positive integer that
determines the blank time derived by division from the system
clock.
The blank time is defined as in equation 5:
tBL = n × 400 ns
where n is a positive integer defined by BT[3:0].
For example, when BT[3:0] contains 1001 (9 in decimal), then
tBL = 3.6 µs typically.
The accuracy of tBL is determined by the accuracy of the system
clock, tOSC , as defined in the Electrical Characteristics table.
Short fault operation
Power MOSFETs take a finite time to reach the rated on-resis-
tance, so the measured drain-source voltages may show a fault as
the phase switches. To overcome this and avoid false short fault
detection, the voltages are not sampled until a blank time elapses
after the external MOSFET is turned on. If the drain-source volt-
age remains above the threshold after the blank time, then a short
fault will be detected. If ESF (Run bit 6) is set to 1 this fault will
be latched and the MOSFET disabled until there is an A4960
Diagnostic register reset.
If a short circuit fault occurs when ESF is set to 0, then the
external MOSFETs are not disabled by the A4960. To limit any
damage to the external MOSFETs or the motor, the A4960 should
either be fully disabled by the RESETN input or all MOSFETs
switched off by setting RUN (bit 0 in the Run register) to 0,
through a serial interface write. Alternatively, setting the ESF bit
to 1will allow the A4960 to disable the MOSFETs as soon as a
fault is detected.
MOSFET Fault State: Short to Supply
A short from any of the motor phase connections to the battery
or VBB connection is detected by monitoring the voltage across
the low-side MOSFETs in each phase using the respective Sx
terminal and the LSS terminal. This drain-source voltage is then
compared to the Drain-Source Threshold Voltage, VDSTH , after
a blank time. While the drain source voltage exceeds VDSTH
, the
general fault output flag (DIAG pin) will be low and, when ESF
is set to 1, it will be latched low and the outputs will be disabled.
MOSFET Fault State: Short to Ground
A short from any of the motor phase connections to ground
is detected by monitoring the voltage across the high-side
MOSFETs in each phase using the respective Sx terminal and the
voltage at VBRG. This drain-source voltage is then compared to
the Drain-Source Threshold Voltage, VDSTH
, after a blank time.
While the drain source voltage exceeds VDSTH the general fault
output flag on the DIAG pin will be low and, when ESF is set to
1, it will be latched low and the outputs will be disabled.
Note: The distinction between short to ground and short to supply
can only be made by examining the serial Diagnostic register.
The general fault output flag (DIAG pin) simply indicates the
presence of a probable short circuit.
MOSFET Fault State: Shorted Winding
The short to ground and short to supply detection circuits will
also detect a short across a motor phase winding. In most cases
a shorted winding will be indicated by a high-side and low-side
fault latched at the same time in the Diagnostic register. In some
cases the relative impedances may only permit one of the shorts
to be detected. In any case when a short of any type is detected
the general fault output flag (DIAG pin) will go low and, when
ESF is set to 1, it will be latched low and the outputs will be
disabled.
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Serial Interface Description
A three wire synchronous serial interface, compatible with SPI,
is used to control the features of the A4960. A fourth wire can
be used to provide diagnostic feedback and read back of register
contents.
The A4960 can be started only by using the serial interface to set
the RUN bit (Run bit 0) to 1. Application specific settings are
configured by setting the appropriate register bits through the
serial interface.
The serial interface timing requirements are specified in the
Electrical Characteristics table, and illustrated in figure 1. Data is
received on the SDI terminal and clocked through a shift register
on the rising edge of the clock signal input on the SCK terminal.
STRN is normally held high, and is brought low only to initiate a
serial transfer. No data is clocked through the shift register when
STRN is high, allowing multiple slave units to use common SDI,
SCK, and SDO connections. Each slave then requires an indepen-
dent STRN connection.
When 16 data bits have been clocked into the shift register,
STRN must be taken high to latch the data into the selected regis-
ter. When this occurs, the internal control circuits act on the new
data and the Diagnostic register is reset.
If there are more than 16 rising edges on SCK, or if STRN goes
high and there are fewer than 16 rising edges on SCK, the write
will be cancelled without writing data to the registers. In addition
the Diagnostic register will not be reset and the FF bit (Diagnotic
bit 15) will be set to 1 to indicate a data transfer error.
Diagnostic information or the contents of the configuration and
control registers is output on the SDO terminal, MSB first, while
STRN is low. The output stream changes to the next bit on each
falling edge of SCK. The first bit, which is always the FF bit, is
output as soon as STRN goes low.
0 1 2 3 4 5 6 7 8 9 01 11 21 31 41 51
Config 0 (Blank,Dead) 0 0 0 WR CB1CB0BT3BT2BT1BT0DT5DT4DT3DT2DT1DT0
001000010100
Config 1 (VREF,VDSTH) 0 0 1 WR VR3VR2VR1VR0VT5VT4VT3VT2VT1VT0
0 0 1111100000
Config 2 (PWM) 0 1 0 WR PT4PT3PT2PT1PT0
0 0 0 0 0 0 0 1 0 0 0 0
Config 3 (Hold) 0 1 1 WR IDS HQ3HQ2HQ1HQ0HT3HT3HT1HT0
0 0 0 001010100
Config 4 (Start Com) 1 0 0 WR EC3EC2EC1EC0SC3SC2SC1SC0
0 0 0 0 1 1 1 1 0 1 0 0
Config 5 (Ramp) 1 0 1 WR PA3 PA2 PA1 PA0 RQ3RQ2RQ1RQ0RR3RR2RR1RR0
000010000000
Mask 1 1 0 WR TW TS LOS VA VB VC AH AL BH BL CH CL
0 0 0 0 0 0 0 0 0 0 0 0
Run 1 1 1 WR BH1 BH0 BW2 BW1 BW0 ESF DG1 DG0 RSC BRK DIR RUN
0 0 1 0 0 0 0 0 0 0 0 0
DiagnosticFF POR VR TW TS LOS VA VB VC AH AL BH BL CH CL
1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0
*Power-on reset value shown below each input register bit.
Table 3. Serial Registers Definition
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Each of the 8 configuration and control registers has a write bit,
WR (bit 12), as the first bit after the register address (bits 15:13).
This bit must be set to 1 to write the subsequent bits into the
selected register. If WR is set to 0 then the remaining data bits
(bits 11:0) are ignored.
The state of the WR bit also determines the data output on SDO.
By setting the WR bit to 1, writing to any register will allow the
Diagnostic register to be read at the SDO output. If WR is set
to 0, then the output is the contents of the register addressed by
the first three input bits. In all cases the first three bits output on
SDO will always be the FF, POR, and VR bits from the Diagnos-
tic register.
Configuration and control registers
The serial data word is 16 bits, input MSB first, with the first
three bits defined as the register address. This provides eight writ-
able registers:
• Six registers are used for configuration: one for blank time and
dead time programming, one for current and voltage limits, one
for PWM set-up parameters, and three for start-up parameters.
• The seventh register is the fault Mask register, which provides
the ability to disable individual diagnostics.
• The eighth register is the Run register, containing motor control
inputs.
Config0 Configuration register 0 contains basic timing
settings:
• CB[1:0], 2 bits to select the commutation blank time, tCB
• BT[3:0], a 4-bit integer to set the blank time, tBL
, in 400 ns
increments
• DT[5:0], a 6-bit integer to set the dead time, tDEAD , in 50 ns
increments
Config1 Configuration Register 1 contains basic voltage
settings:
• VR[3:0], a 4-bit integer to set the current limit reference volt-
age, VRI , as a ratio of the voltage at the REF terminal, VREF
• VT[5:0], a 6-bit integer to set the Drain-Source Threshold Volt-
age, VDSTH , in 25 mV increments
Config2 Configuration Register 2 contains PWM settings:
PT[4:0], a 5-bit integer to set the off-time for the PWM cur-
rent control used to limit the motor current during start-up and
normal running
Config3 Configuration Register 3 contains start-up hold settings:
• IDS, to select between current control and duty cycle control to
set the initial holding torque.
• HQ[3:0], a 4-bit integer to set the holding torque for the initial
start position. The holding torque is set by an internally gener-
ated PWM duty cycle or by internal PWM current control.
▫ If IDS is set to zero then HQ[3:0] selects the hold current in 
increments of 6.25%.
If IDS is set to one then HQ[3:0] selects the duty cycle in
increments of 6.25%.
• HT[3:0], a 4-bit integer to set the hold time of the initial start
position in increments of 8 ms from 2 ms.
Config4 Configuration Register 4 contains start-up timing set-
tings:
• EC[3:0], a 4-bit integer to set the end commutation time in
increments of 200 µs.
• SC[3:0], a 4-bit integer to set the start commutation time in
increments of 8 ms.
Config5 Configuration Register 5 contains start-up ramp settings:
• PA[3:0], a 4-bit integer to set the phase advance in increments
of 1.875° (electrical degrees)
• RQ[3:0], a 4-bit integer to set the torque during ramp-up. The
ramp torque is set by an internally generated PWM duty cycle
or by internal PWM current control.
If ISD is set to zero then RQ[3:0] selects the hold current in
increments of 6.25%.
If ISD is set to one then RQ[3:0] selects the duty cycle in
increments of 6.25%.
• RR[3:0], a 4-bit integer to set the acceleration rate during the
forced commutation ramp up. Sets the reduction in commuta-
tion time, in 200 µs steps, at each commutation change.
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Mask This register contains a fault masking bit for each fault
bit in the Diagnostic register. If a bit is set to one in the Mask
register then the corresponding diagnostic will be completely
disabled. No fault states for the disabled diagnostic will be gener-
ated and no fault flags or diagnostic bits will be set.
Run This register contains various bits to set running conditions:
• BH[1:0], 2 bits to select the BEMF hysteresis.
• BW[2:0], 3 bits to select the BEMF window.
• ESF, the Enable Stop on Fault bit; defines the action taken
when a short is detected. See Diagnostics section for details of
fault actions.
• DG[1:0], 2 bits to select the output routed to the DIAG termi-
nal. The default output is the general fault output flag, which
is a low true (active low) signal that is active anytime a fault
is present or a fault state has been latched. The second option
sets the DIAG output high whenever the A4960 is running with
sensorless commutation. The other two outputs provide an ex-
ternal controller with the facility to read back the drain-source
threshold voltage, or to measure the system clock frequency for
calibration.
• RSC, the Restart control bit.
When set to 1 allows restart after loss of BEMF synchroniza-
tion if RUN is 1 and BRK is 0.
When set to 0 the motor will coast to a stop when bemf syn-
chronization is lost.
• BRK, brake control.
• DIR, direction control.
• RUN, enables the A4960 to start and run the motor.
Diagnostic register
There is one diagnostic register in addition to the eight writable
registers. Each time a register is written, the Diagnostic register
can be read, MSB first, on the serial output terminal, SDO (see
serial timing diagram, figure 1). The Diagnostic register contains
fault flags for each fault condition and a general fault flag. When-
ever a fault occurs, the corresponding flag bit in the Diagnostic
register will be set and latched.
The fault flags in the Diagnostic register are reset only on the
completion of a serial interface access, or when the RESETN
input is low for the Reset Pulse Width, tRES. Resetting the
Diagnostic register only affects latched faults that are no longer
present. For any static faults that are still present, for example
overtemperature, the fault flag will remain set after the register
reset.
At power-up or after a power-on reset, the FF bit and the POR bit
are set and all other bits are reset. This indicates to the external
controller that a power-on reset has taken place and all registers
have been reset. Note that a power-on reset only occurs when the
VDD supply rises above its undervoltage threshold. Power-on
reset is not affected by the state of the VBB supply or VREG.
The first bit in the register is the diagnostic register flag, FF. This
is high if any bits in the diagnostic register are set or if a serial
write error has occurred. When STRN goes low to start a serial
write SDO comes out of its high impedance state and outputs
the serial register fault flag. This allows the main controller to
poll the A4960 through the serial interface to determine if a fault
has been detected. If no faults have been detected then the serial
transfer may be terminated without generating a serial read fault
by ensuring that SCK remains high while STRN is low. When
STRN goes high the transfer will be terminated and SDO will go
into its high impedance state.
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Serial Register Reference
Configuration Register 0
CB[1:0] Commutation blank time
CB1 CB0 Blank Time Default
D sµ05 0 0
sµ001 1 0
sµ004 0 1
sm1 1 1
The accuracy of tCB is determined by the system clock
frequency as defined in the electrical characteristics table.
BT[3:0] Blank time
nsn ×tBL 400
where n is a positive integer defined by BT[3:0]
e.g. for the power-on-reset condition
BT[3:0] =
=
[1 0 0 0] then tBL=3.2µs
The range of tBL is 0 to 6µs.
The accuracy of tBL is determined by the system clock
frequency as defined in the electrical characteristics table.
DT[5:0] Dead time
nsnt DEAD 50
where n is a positive integer defined by DT[5:0]
e.g. for the power-on-reset condition
DT[5:0] = [0 1 0 1 0 0] then tDEAD=1µs
The range of is 100ns to 3.15µs. Selecting a value of 0, 1
or 2 will set the dead time to 100ns.
The accuracy of tDEAD is determined by the system clock
frequency as defined in the electrical characteristics table.
Configuration Register 1
VR[3:0] Current sense reference ratio for normal running
conditions.
Typically:
REFRI V(nV %25.61)
where n is a positive integer defined by VR[3:0]
e.g. for the power-on-reset condition
VR[3:0] = [1 1 1 1] then VRI=VREF
If the REF terminal is connected to VDD then VREF is
clamped to VREFC.
The range of VRI is 6.25% VREF to 100%VREF.
VT[5:0] VDS Threshold.
Typically:
mVnVDSTH 25
where n is a positive integer defined by VT[5:0]
e.g. for the power-on-reset condition
VT[5:0] = [1 0 0 0 0 0] then VDSTH=800mV
The range of VDSTH is 0 to 1.575V.
0 1 2 3 4 5 6 7 8 9 01 11 21 31 41 51
Config 0 0 0 0 WR CB1CB0BT3BT2BT1BT0DT5DT4DT3DT2DT1DT0
001000010100
Config 1 0 0 1 WR VR3VR2VR1VR0VT5VT4VT3VT2VT1VT0
1111100000
*Power on reset value shown below each input register bit.
×
=
×+
=
×
=
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Serial Register Reference
Configuration Register 2
PT[4:0] Fixed off time
µsnµstOFF 6.110
where n is a positive integer defined by PT[4:0]
e.g. for the power-on-reset condition
PT[4:0] = [1 0 0 0 0] then tOFF=35.s
The range of tOFF is 10µs to 59.6µs.
The accuracy of tOFF is determined by the system clock
frequency as defined in the electrical characteristics table.
Configuration Register 3
IDS Start-up Torque control method
IDS Start-up Torque control Default
D detimil tnerruC 0
detimil elcyc ytuD 1
HQ[3:0] Current sense reference ratio or duty cycle ratio
for hold torque during initial start sequence.
If IDS is 0 then HQ[3:0] sets the hold current.
If IDS is 1 then HQ[3:0] sets the hold duty cycle.
Typically:
REFRH VnV %25.61 ...... when IDS=0
%25.61nD H ............... when IDS=1
where n is a positive integer defined by HQ[3:0]
e.g. for the power-on-reset condition
HQ[3:0] = [0 1 0 1] then
VRH=37.5%VREF ...................... when IDS=0
DH=37.5% ............................... when IDS=1
The range of VRH is 6.25% VREF to 100%VREF.
The range of DH is 6.25% to 100%.
The accuracy of VRH and DH is defined in the electrical
characteristics table.
HT[3:0] Hold Time.
msnmst HOLD 82
where n is a positive integer defined by HT[3:0]
e.g. for the power-on-reset condition
HT[3:0] = [0 1 0 0] then tHOLD=34ms
The range of tHOLD is 2ms to 122ms.
The accuracy of tHOLD is determined by the system clock
frequency as defined in the electrical characteristics
table.
0 1 2 3 4 5 6 7 8 9 01 11 21 31 41 51
Config 2 (PWM) 0 1 0 WR PT4PT3PT2PT1PT0
10000
Config 3 (Hold) 0 1 1 WR IDS HQ3HQ2HQ1HQ0HT3HT3HT1HT0
001010100
*Power on reset value shown below each input register bit.
×+
=
×
+
×
+
=
=
×
+ =
( )
( )
( )
( )
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Allegro MicroSystems, LLC
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Serial Register Reference
Configuration Register 4
EC[3:0] End Commutation time
msntCOME 2.01
where n is a positive integer defined by EC[3:0]
e.g. for the power-on-reset condition
EC[3:0] = [1 1 1 1] then tCOME=3.2ms
The range of tCOME is 0.2ms to 3.2ms.
The accuracy of tCOME is determined by the system clock
frequency as defined in the electrical characteristics table.
SC[3:0] Start commutation time
msntCOMS 81
where n is a positive integer defined by SC[3:0]
e.g. for the power-on-reset condition
SC[3:0] = [0 1 0 0] then tCOMS=40ms
The range of is 8ms to 128ms.
The accuracy of tCOMS is determined by the system clock
frequency as defined in the electrical characteristics table.
Configuration Register 5
PA[3:0] Phase Advance.
Typically:
)(875.1 electricaln
ADV
where n is a positive integer defined by PA[3:0]
e.g. for the following condition
PA[3:0] = [1 0 0 0] then ADV=15°
The range of ADV is 0 to 28.125° (electrical)
The accuracy of ADV is defined in the electrical
characteristics table.
RQ[3:0] Current sense reference ratio or duty cycle ratio
for torque during forced commutation ramp-up.
If IDS is 0 then RQ[3:0] sets the ramp current.
If IDS is 1 then RQ[3:0] sets the ramp duty
cycle.
Typically:
REFRR VnV %25.61 ........ when IDS=0
%25.61nDR ................. when IDS=1
where n is a positive integer defined by RQ[3:0]
e.g. for the power-on-reset condition
RQ[3:0] = [1 0 0 0] then
VRH=56.25%VREF .................... when IDS=0
DH=56.25% ............................. when IDS=1
The range of VRR is 6.25% VREF to 100%VREF.
The range of DR is 6.25% to 100%.
The accuracy of VRR and DR is defined in the electrical
characteristics table.
RR[3:0] Ramp rate.
Decrease in commutation time at each
commutation change.
Typically at each commutation change:
ms(ntt COMnextCOM 2.01)
)(
where tCOM(next) is the next commutation time in ms,
tCOM is the present commutation time in ms,
and n is a positive integer defined by RR[3:0]
e.g. for the condition RR[3:0] =
=
[0 1 1 1]
the commutation time will be reduced by 1.6ms at
each commutation change.
The range of RR is 0 to 15.
The range of the commutation change is 0.2ms to 3.2ms.
The accuracy of RR is determined by the system clock
frequency as defined in the electrical characteristics
table.
0 1 2 3 4 5 6 7 8 9 01 11 21 31 41 51
Config 4 (Start Com) 1 0 0 WR EC3EC2EC1EC0SC3SC2SC1SC0
11110100
Config 5 (Ramp) 1 0 1 WR PA3 PA2 PA1 PA0 RQ3RQ2RQ1RQ0RR3RR2RR1RR0
000010000000
*Power on reset value shown below each input register bit.
×
+ =
×
+ =
×θ
θ
θ
θ
°
=
×
= +
×
= +
×
+
( )
( )
( )
( )
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Allegro MicroSystems, LLC
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1.508.853.5000; www.allegromicro.com
Serial Register Reference
Run Register
BH[1:0] BEMF Hysteresis.
BH1 BH0 Hysteresis Default
0 0 Auto High Start/Low Run D
enoN 1 0
hgiH 0 1
woL 1 1
BW[2:0] BEMF Window.
BW2 BW1 BW0 Window Default
0 0 0 0.4µs
0 0 1 0.8µs
0 1 0 1.6µs
0 1 1 3.2µs
1 0 0 6.4µs D
1 0 1 12.8µs
1 1 0 25.6µs
1 1 1 51.2µs
ESF Enable Stop on Fail
tluafeD noitalucriceR FSE
1 Stop on fail. Report fault.
0 No stop on fail, Report fault. D
DG[1:0] Selects signal routed to DIAG output.
DG1 DG0 Signal on DIAG pin Default
0 0 Fault– low true D
0 1 LOS – low true
HTSDV 0 1
kcolC 1 1
RSC Restart control
tluafeD tratseR CSR
D tratser oN 0
1 Allow restart after loss of sync
BRK Brake
tluafeD noitalucriceR KRB
0 Brake off – normal operation D
1 Brake on – slow decay recirculation
DIR Direction of Rotation
tluafeD noitceriD RID
0 Forward (Table 1 states 1to 6) D
1 Reverse (Table 1 states 6 to 1)
RUN Run enable
tluafeD noitalucriceR NUR
0 Disable outputs, coast motor D
rotom nur dna tratS 1
0 1 2 3 4 5 6 7 8 9 01 11 21 31 41 51
Run 1 1 1 WR BH1 BH0 BW2 BW1 BW0 ESF DG1 DG0 RSC BRK DIR RUN
0 0 1 0 0 00 0 0 0 0 0
*Power on reset value shown below each input register bit.
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Allegro MicroSystems, LLC
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Serial Register Reference
Mask Register
TW Temperature warning
TS Thermal shutdown
LOS Loss of bemf synchronization
VA Bootcap A fault
VB Bootcap B fault
VC Bootcap B fault
AH Phase A high-side VDS
AL Phase A low-side VDS
BH Phase B high-side VDS
BL Phase B low-side VDS
CH Phase C high-side VDS
CL Phase C low-side VDS
tluafeD ksam tluaF xx
0 Fault detection permitted D
1 Fault detection disabled
Diagnostic Register
FF General Fault flag
PORPower-on-reset
VR Undervoltage
TW High temperature warning
TS Over temperature shutdown
LOS bemf synchronization lost
VA Fault on bootcap A
VB Fault on bootcap B
VC Fault on bootcap C
AH VDS fault detected on Phase A high-side
AL VDS fault detected on Phase A low-side
BH VDS fault detected on Phase B high-side
BL VDS fault detected on Phase B low-side
CH VDS fault detected on Phase C high-side
CL VDS fault detected on Phase C low-side
xx Fault
0 No fault detected
1 Fault detected
0 1 2 3 4 5 6 7 8 9 01 11 21 31 41 51
Mask 1 1 0 WR TW TS LOS VA VB VC AH AL BH BL CH CL
0 0 0 0 0 0 0 0 0 0 0 0
DiagnosticFF POR VR TW TS LOS VA VB VC AH AL BH BL CH CL
1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0
*Power on reset value shown below each input register bit.
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Allegro MicroSystems, LLC
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1.508.853.5000; www.allegromicro.com
Applications Information
Control Timing Diagrams
RUN
BR
Coast Hold Ramp Run Coast Brake
TACHO
DIAG
LOS
Motor State
tHOLD
RUN
BR
Coast Hold Ramp Run pwm off Brake
Motor State
tHOLD
PWM
tBRK
Brake
PWM duty cycle ignored
RUN
Coast Hold Ramp Run Coast Brake
Motor State
tHOLD
PWM
tBRK
Brake
PWM duty cycle ignored
tBRK
TACHO
DIAG
LOS
TACHO
DIAG
LOS
PWM duty cycle used to vary speed
PWM duty cycle used to vary speed
Figure 9. Control example: Start from coast, coast, then brake to stop
Figure 10. Control example: Start from brake, PWM brake to stop
Figure 11. Control example: Start from PWM, coast, then PWM brake to stop
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Allegro MicroSystems, LLC
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ST
R
2
6V 6V
50
VDD VDD
PWM
SDI
SC
K
2
6V 6V
50
VDD VDD
RESET
2
7.5V 7.5V
80
SDO
TACHO
DIAG
25 Ω
6V
VDD
CSP
CSM
18V
VREG
5
6V
REF
80
6V 6V
Cx
18V
GHx
Sx
GLx
LSS
18V
18V
VREG
18V
18V
14V
VBRG
18V
18V
14V
VBB
18V
18V
14V
VDD
6V
CP1
18V
CP2 VREG
18V
7.5V
Input/Output Structures
(a) Gate Drive Outputs (b) Supplies
(d) STR Inputs (e) RESETN Inputs
(g) REF Inputs (h) Logic Outputs
(c) PWM, SDI, and SCK Inputs
(f) Sense Inputs
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Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Package JP, 32-Pin LQFP
With Exposed Thermal Pad
Exposed thermal pad (bottom surface); exact dimensions may vary with device
C
C
ATerminal #1 mark area
B
For Reference Only; not for tooling use (reference MS-026 BBAHD)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
21
32
B
A
C
SEATING
PLANE
C0.10
32X
GUAGE PLANE
SEATING PLANE
5.00±0.04
5.00±0.04
1.60 MAX
1.40 ±0.05
+0.08
–0.07
9.00 ±0.20
9.00 ±0.20 7.00 ±0.20
7.00 ±0.20
0.80 BSC
0.25 BSC
1.00
REF
0.60 ±0.15
3.5° ±3.5
0.20
0.09
0.15
0.05
Branded Face
0.37
PCB Layout Reference View
Reference land pattern layout (reference IPC7351
QFP80P900X900X160-32BM); adjust as necessary to
meet application process requirements and PCB layout
tolerances; when mounting on a multilayer PCB, thermal
vias at the exposed thermal pad land can improve thermal
dissipation (reference EIA/JEDEC Standard JESD51-5)
0.80
5.00 8.70
0.45
1.80
8.70
5.00
32
2
1
Automotive, Sensorless BLDC Controller
A4960
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Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Copyright ©2011-2017, Allegro MicroSystems, LLC
Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to
permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that
the information being relied upon is current.
Allegro’s products are not to be used in life support devices or systems, if a failure of an Allegro product can reasonably be expected to cause the
failure of that life support device or system, or to affect the safety or effectiveness of that device or system.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its
use; nor for any infringement of patents or other rights of third parties which may result from its use.
For the latest version of this document, visit our website:
www.allegromicro.com
Revision Table
Revision Number Revision Date Description
October 6, 2011 Initial Release
1 September 9, 2015 Corrected Figure 10 (page 31) DIAG and LOS signals
2 April 24, 2017 Corrected pinout diagram typo (page 4)