2SK2553 Silicon N-Channel MOS FET Nov. 1, 1996 Application High speed power switching Features * * * * Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 2 3 3 D G S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 50 A 200 A 50 A 45 A 174 mJ Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR Avalanche current Avalanche energy I AP * 3 EAR* 3 2 1 Channel dissipation Pch* 75 W Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2 2SK2553 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 -- -- V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16 V, VDS = 0 Zero gate voltage drain current I DSS -- -- 10 A VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) -- 7 10 m I D = 25 A VGS = 10 V*1 -- 10 16 m I D = 25 A VGS = 4 V*1 Forward transfer admittance |yfs| 35 55 -- S I D = 25 A VDS = 10 V*1 Input capacitance Ciss -- 3550 -- pF VDS = 10 V Output capacitance Coss -- 1760 -- pF VGS = 0 Reverse transfer capacitance Crss -- 500 -- pF f = 1 MHz Turn-on delay time t d(on) -- 35 -- ns I D = 25 A Rise time tr -- 230 -- ns VGS = 10 V Turn-off delay time t d(off) -- 470 -- ns RL = 1.2 Fall time tf -- 360 -- ns Body to drain diode forward voltage VDF -- 0.9 -- V I F = 50 A, VGS = 0 Body to drain diode reverse recovery time t rr -- 135 -- ns I F = 50 A, VGS = 0 diF / dt = 50 A / s Note 1. Pulse Test See characteristic curves of 2SK2529. 3 2SK2553 Power vs. Temperature Derating I D (A) 500 100 20 1 10 s s m s (1 sh ot ) c (T = ) C 25 Operation in this area is limited by R DS(on) s m n 5 = tio ra 10 0 pe 25 PW 50 10 O 50 10 200 Drain Current 75 Maximum Safe Operation Area C D Channel Dissipation Pch (W) 100 2 0 50 100 Case Temperature 150 Tc (C) 200 1 Ta = 25 C 0.5 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.1 0.03 0.01 10 0.2 ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 100 PW T PW T 1m 10 m Pulse Width 4 D= 100 m PW (S) 1 10 2SK2553 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 5