2SK2553
Silicon N-Channel MOS FET
Nov. 1, 1996
Application
High speed power switching
Features
• Low on-resistance
• RDS(on) = 7 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
3
2
1
4
3
2
1
4
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK2553
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID50 A
Drain peak current ID(pulse)*1200 A
Body to drain diode reverse drain current IDR 50 A
Avalanche current IAP*345 A
Avalanche energy EAR*3174 mJ
Channel dissipation Pch*275 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK2553
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS ——10µAV
DS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 7 10 mΩID = 25 A
VGS = 10 V*1
—1016mΩI
D
= 25 A
VGS = 4 V*1
Forward transfer admittance |yfs|3555—SI
D
= 25 A
VDS = 10 V*1
Input capacitance Ciss — 3550 — pF VDS = 10 V
Output capacitance Coss — 1760 — pF VGS = 0
Reverse transfer capacitance Crss — 500 — pF f = 1 MHz
Turn-on delay time td(on) — 35 — ns ID = 25 A
Rise time tr— 230 — ns VGS = 10 V
Turn-off delay time td(off) — 470 — ns RL = 1.2 Ω
Fall time tf— 360 — ns
Body to drain diode forward
voltage VDF — 0.9 — V IF = 50 A, VGS = 0
Body to drain diode reverse
recovery time trr — 135 — ns IF = 50 A, VGS = 0
diF / dt = 50 A / µs
Note 1. Pulse Test
See characteristic curves of 2SK2529.
2SK2553
4
100
75
50
25
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
500
200
100
20
50
10
2
5
1
0.5
0.1 0.3 1 310 30 100
Operation in
this area is
limited by R DS(on)
Ta = 25 °C
10 µs
100 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m
Pulse Width PW (S)
Normalized Transient Thermal Impedance
100 m 1 10
s (t)
γ
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.67 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Normalized Transient Thermal Impedance vs. Pulse Width
2SK2553
5
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other reasons during operation of the user’s unit according to this document.
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performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
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herein.
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