DH2F200N4S May. 2009 Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 1 Features 2 H (Common Heat Sink) Repetitive Reverse Voltage : VRRM = 400V Low Forward Voltage Drop : VF(typ.) = 1.05V Average Forward Current : IF(AV.) = 200A @ Tc = 100 Ultra-Fast Reverse Recovery Time : trr(typ.) = 150 ns Extensive Characterization of Recovery Parameters Reduced EMI and RFI Non Isolation Type Package and 175 Operating Junction Temperature Dual FRD Construction Package : 3DM - 2NI Series Applications Non Isolation Type High Speed & High Power Converters, Welders, Various Switching and Telecommunication Power Supply. Please see the package Out line information Ordering Information Device Name Optional Information DH2F200N4S Common Heat Sink Non Isolation Type Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter I2 t Repetitive Peak Reverse Voltage Reverse DC Voltage Average Forward Current @ Tc = 25 @ Tc = 100 Surge(non-repetitive) Forward Current I2t for Fusing Tj Tstg - Junction Temperature Storage Temperature Mounting Torque(M6) Terminal Torque(M6) Weight VRRM VR(DC) IF(AV) IFSM Conditions Resistive Load One Half Cycle at 60Hz, Peak Value Value for One Cycle Current, tw = 8.3ms, Tj = 25 Start Typical Including Screws Copyright@DAWIN Electronics Co., Ltd. All right reserved 1/4 Ratings Unit 400 320 400 200 3300 V V A A A 45.0* 103 A2s -40 ~ 175 -40 ~ 150 4.0 3.0 95 N.m N.m g DH2F200N4S May. 2009 Thermal Characteristics Values Symbol Rth(j-c) Parameter Conditions Thermal Resistance(Non Isolation Type) Min. Typ. Max. - - 0.15 Junction to Case Unit /W Electrical Characteristics @ Tj=25 (unless otherwise specified) Values Symbol VR VFM IRRM Trr Parameter Conditions Cathode Anode Breakdown Voltage Maximum Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Typ. Max. 400 - - V - 1.05 0.95 - 1.3 1.1 2.0 V V mA Tc = 25 - 150 220 ns Tc = 100 - 220 - ns IR = 100uA IFM = 150A, Tc = 25 IFM = 150A, Tc =100 TC = 100, VRRM applied IFM = 150A, VR = 200V di/dt=-100A/us Copyright@DAWIN Electronics Co., Ltd. All right reserved 2/4 Unit Min. DH2F200N4S May. 2009 Performance Curves 115 TC=100 100 Reverse Recovery Time,trr,[ns] Forward Current IF [A] 1000 TC=25 10 105 95 85 75 1 0 0.5 1 1.5 2 100 2.5 1000 di/dt[A/us] Forward Voltage Drop VF [V] Fig. 1 : Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 : Typical Reverse Recovery Time vs. -di/dt 160 1 120 Average Forward Current I F(AVG) [A] Thermal Responce Zthjc[/w] 140 0.1 0.01 100 80 60 40 20 0.001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0 60 Rectangular Pulse Duration[sec] 80 100 120 Case Temperature [] Fig. 3 : Transient Thermal Impedance(Zthjc) Characteristics Fig. 4 : Forward Current Derating Curve Copyright@DAWIN Electronics Co., Ltd. All right reserved 3/4 140 160 May. 2009 Package Out Line Information 3DM-2NI Series Copyright@DAWIN Electronics Co., Ltd. All right reserved 4/4 DH2F200N4S