SCHOTTKY DIE SPECIFICATION TYPE: MBR1640
40 V 15 A (Low Ir) Single Anode
SYM Die Sort UNIT
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 42.5 Volt
Ir=0.5mA (for dice form) IFAV Amp
VF MAX 0.55 Volt
0.68
IR MAX 0.15 mA
Cj MAX pF
IFSM Amp
Tj °C
TSTG °C
Specifications apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DIM um2Mil2
A3116 122.67
B3016 118.70
C3036 119.50
D254 10.00
305 12.00
Micro-Electro-Magnetical Tech Co.
Spec. Limit
40
15
Thickness (Max)
0.2
Top Metal Pad Size
Passivation Seal
Thickness (Min)
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
General Description:
250
-65 to +125
-65 to +125
0.575
0.69
@ 15 Ampere, Ta=25°C
@ 20 Ampere, Ta=25°C
Maximum Instantaneous Reverse Voltage
@ VR= 40 Volt, Ta=25°C
ELECTRICAL CHARACTERISTICS
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperature
ITEM
Die Size
DICE OUTLINE DRAWING
B
C
A
Top-side Metal
DSiO2 Passivation
P+ Guard Ring
Back-side Metal
