2 2016-06-21
IRFM440
JANTX2N7222 / JANTXV2N7222
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.78 ––– V/°C Reference to 25°C, ID = 1.0mA
Static Drain-to-Source On-State ––– ––– 0.85 VGS = 10V, ID = 5.0A
Resistance ––– –––
0.95 VGS = 10V, ID = 8.0A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Gfs Forward Transconductance 4.7 ––– ––– S VDS = 15V, ID = 5.0A
IDSS Zero Gate Voltage Drain Current ––– ––– 25 µA VDS = 400V, VGS = 0V
––– ––– 250 VDS = 400V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– 100 nA VGS = 20V
Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -20V
QG Total Gate Charge ––– ––– 68.5
nC
ID = 8.0A
QGS Gate-to-Source Charge ––– ––– 12.5 VDS = 250V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 42.4 VGS = 10V
td(on) Turn-On Delay Time ––– ––– 21
ns
VDD = 250V
tr Rise Time ––– ––– 73 ID = 8.0A
td(off) Turn-Off Delay Time ––– ––– 72 RG = 9.1
tf Fall Time ––– ––– 51 VGS = 10V
Ls +LD Total Inductance ––– 6.8 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
Ciss Input Capacitance ––– 1300 –––
pF
VGS = 0V
Coss Output Capacitance ––– 310 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 120 ––– ƒ = 1.0MHz
RDS(on)
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– 8.0
ISM Pulsed Source Current (Body Diode) ––– ––– 32
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C,IS = 8.0A, VGS = 0V
trr Reverse Recovery Time ––– ––– 700 ns TJ = 25°C, IF = 8.0A, VDD ≤50V
Qrr Reverse Recovery Charge ––– ––– 8.9 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L = 21.8mH, Peak IL = 8.0A, VGS = 10V
ISD 8.0A, di/dt 100A/µs, VDD 500V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%.
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.0
°C/W
RCS Case -to-Sink 0.21 –––
RJA Junction-to-Ambient (Typical socket mount) ––– 48
Min.
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