91813 TKIM TC-00002976 No. A2212-1/5
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
WPB4001
N-Channel Power MOSFET
500V, 26A, 0.26Ω, TO-3P-3L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
• ON-resistance RDS(on)=0.2Ω (typ.)
• Input capacitance Ciss=2250pF (typ.)
• 10V Drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage VDSS 500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID26 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 90 A
Source to Drain Diode Forward Current (DC)
ISD 26 A
Source to Drain Diode Forward Current (Pulse)
ISDP PW≤10μs, duty cycle≤1% 90 A
Allowable Power Dissipation PD2.5 W
Tc=25°C
220 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1EAS 543 mJ
Avalanche Current *2IAV 14 A
Note :
*1 VDD=50V, L=5mH, IAV=14A (Fig.1)
*2 L≤5mH, single pulse
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 500 V
Zero-Gate Voltage Drain Current IDSS V
DS=400V, VGS=0V 100 μA
Gate to Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 35V
Forward T ransfer Admittance | yfs |VDS=10V, ID=13A7.5 15.5 S
Static Drain to Source On-State Resistance
RDS(on) ID=13A, VGS=10V 0.20 0.26 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 2250 pF
Output Capacitance Coss 450 pF
Reverse Transfer Capacitance Crss 90 pF
Turn-ON Delay Time td(on)
See Fig.2
44 ns
Rise Time tr 156 ns
Turn-OFF Delay Time td(off) 224 ns
Fall Time tf94 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=26A 87 nC
Gate to Source Charge Qgs 15.2 nC
Gate to Drain “Miller” Charge Qgd 50 nC
Diode Forward Voltage VSD IS=26A, VGS=0V 1.1
1.5
V
Reverse Recovery Time trr See Fig.3
ISD=26A, VGS=0V, di/dt=100A/μs115 ns
Reverse Recovery Charge Qrr 340 nC
Ordering number : ENA2212
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
TO-3P-3L
WPB4001
No. A2212-2/5
Drain to Source Voltage, VDS -- V
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Case Temperature, Tc -- °C
Drain Current, ID -- A Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate to Source Voltage, VGS -- V
ID -- VDS ID -- VGS(off)
RDS(on) -- TcRDS(on) -- VGS
IS -- VSD
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain to Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
IT17181 IT17182
IT17183 IT17184
--50 --25 0 25 50 75 100 125 150
0
0
60
70
80
50
30
40
10 305252015
20
10
0
70
80
90
60
50
30
20
40
10
01641221068 14
15V
10V
0
0.6
0.5
0.4
0.3
0.2
0.1
Tc=25°CVDS=20V
VGS=6V
IT17186
0 0.2 0.4 0.6 0.8 1.41.21.0
0.01
0.1
10
7
5
5
3
2
7
3
2
7
5
3
2
2
1.0
7
5
3
IT17250
25
°
C
--25°C
Tc=75°C
0.1 1.0
23 57 23 5757 10 23 57
100
10
1.0
2
5
7
3
5
7
3
2
5
3VDS=10V
Tc= --25
°
C
75
°
C
Tc= --25°C
25°C
75°C
5
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
109768
Tc=75°C
25°C
--25°C
VGS=10V, ID=13A
25
°
C
8V
IT17187
100
3
2
2
5
7
3
7
5
0.1 1.0 10
23 57 2 323557
VDD=200V
VGS=10V
td(off)
tr
tf
td(on)
0
100
1K
3
10K
2
5
3
2
7
5
3
2
7
5
5010 30 4020 455253515
IT17188
f=1MHz
Ciss
Coss
Crss
SW Time -- ID
ID=13A
Single pulse Single pulse
VGS=0V
Single pulse
1K
WPB4001
No. A2212-3/5
Total Gate Charge, Qg -- nC
Gate to Source Voltage, VGS -- V
VGS -- Qg A S O
PD -- Tc
Drain to Source Voltage, VDS -- V
Drain Current, ID -- A
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
Avalanche Energy derating factor -- %
Ambient Temperature, Ta -- °C
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
IT17193
0
020 40 60 80 100 120
3.0
2.5
140 160
2.0
1.5
1.0
0.5
IT17191
IT17190
0.1
2
1.0
3
5
7
2
1
10μs
100ms
10ms
1ms
DC operation
10 100 1K
2 3 57 2 3 57 2 3 57
100
3
5
7
2
Operation in
this area is
limited by RDS(on).
IDP=90A (PW≤10μs)
2
10
3
5
7
IT17192
0
020 40 60 80 100 140120
50
250
200
220
150
100
160
IT17251
0
0
1
2
3
4
5
6
7
8
90
10
9
40 8020 6030 7010 50
VDS=200V
ID=26A
100μs
ID=26A
Tc=25°C
Single pulse
WPB4001
No. A2212-4/5
Package Dimensions
WPB4001-1E
TO-3P-3L
CASE 340AF
ISSUE O
Unit : mm
1: Gate
2: Drain
3: Source
Ordering & Package Information
Marking Electrical Connection
Device Package Shipping memo
WPB4001-1E TO-3P-3L
SC-65, SOT-199, TO-247 30
pcs./tube Pb-Free PB4001
LOT No.
1
3
2
WPB4001
PS No. A2212-5/5
Note on usage : Since the WPB4001 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf.
SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit
Fig.3 Reverse Recovery Resistance Test Circuit
50Ω
≥50Ω
RG
VDD
L
10V
0V
WPB4001
G
S
D
P.G 50Ω
G
S
D
ID=13A
RL=15.1Ω
VDD=200V
VOUT
WPB4001
VIN
PW=10μs
D.C.≤1%
10V
0V
VIN
VDD=50V
WPB4001
500μH
Driver MOSFET
G
S
D
